1,720,987 research outputs found
Analytical solution to the non-linear 3-D heat flow equation for the optimized electrothermal design of integrated devices
No full textElectrothermal model of multilayer structure for the design of GaAs integrated circuit devices
No full textIn this paper a mathematical model for the solution of the non-linear 3-D heat equation for GaAs MESFETs is presented. The electrothermal feedback has been implemented by calculating the FET drain current at the actual channel temperature. The thermal solution has been achieved by the Kirchhoff transformation, which accounts for the temperature-dependent thermal conductivity, and the 2-D Fourier transform method
Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters
No full textIn this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account
Analytic model for temperature-Dependent I-V characteristics and small-signal parameters of GaAs MESFETs
No full textIn this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. [1] has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account
Analytical modelling of multilayer structure electronic devices for electrothermal layout optimisation
No full textIn this paper, an analytical model for the electrothermal solution to the non-linear 3-D heat flow equation for multilayer structure electronic devices is proposed. Compared with previous models presented in literature, it is general and can be easily applied to a large variety of integrated devices, provided that their structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The proposed method is independent of the specific physical properties of the layers, hence GaAs MESFETs and HEMTs as well as silicon and silicon-on-insulator MOSFETs and heterostructure LASERs can be analysed. Moreover, it takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is solved coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that a temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed
Il diritto dei più vulnerabili non è un diritto debole: la necessità di ripensare le relazioni educative dei servizi socioeducativi minorili prima e dopo prima e dopo la pandemia da Covid 19
No full textIn conseguenza del rischio sanitario connesso alla insorgenza di patologie derivanti dal Corona Virus, lo Stato , con diversi gradi di severità ha adottato plurime misure di contenimento della potenziale diffusione del contagio, riducendo profondamente la socialità, comprimendo in modo assoluto la libertà di movimento, di riunione e di circolazione, scompaginando gravemente l’organizzazione della scuola, contraendo tutte le attività in presenza comprese quelle di pubblica utilità tra cui il servizio sociale e i tribunali ordinari e minorili
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