156 research outputs found
Double-Charge Exchange of Negative Pions in Inclusive Reactions on Nuclei at 40 GeV/c
No full textInclusive production of Π+on four nuclear targets has been studied using a 40 GeV/c Π-beam at the Serpukhov accelerator. No noticeable A-dependence has been found
Implications of cardiac resynchronization therapy and prophylactic defibrillator implantation among patients eligible for heart transplantation
No full textTwo-particle correlations in pion-nucleus interactions at 40 GeV/c
No full textMultiplicity distributions and two-particle correlation functions are presented for shower particles with pseudorapidity η>1 produced in π- interactions on C, Al, Cu, Pb targets at 40 GeV/c. The results are in the correlation function berween the data on nuclei and on hydrogen. The data are compared with the predictions of the additive quark model and the quasi-eikonal model
Study of coherent inelastic diffraction of a 40-GeV/c. pi. /sup -/ meson in a silicon target-detector
No full textProcessing high-quality silicon for microstrip detectors
No full textAn investigation has been made into the behaviour of high-purity silicon (HP-Si) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 k-OMEGA cm. The investigation is centred on standard bipolar processes based on ion implantation. It is found that, comparing the processes used, the best diode characteristics are achieved when a heat treatment at 600-degrees-C is used after the ion-implantation step, whereas the worst results from an implantation and a 900-degrees-C heat treatment. Thus it is shown that if integration of the electronic circuitry and the detector on a single chip is required, then the high-temperature heat treatments must be done before the ion-implantation step needed for detector fabrication
The Immune Response Elicited by Mammary Adenocarcinoma Cells Transduced with Interferon-y and Cytosine Deaminase Genes Cures Lung Metastases by Parental Cells
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