7,658 research outputs found
Dane do artykułu "Właściwości elektryczne i optyczne cienkich warstw WOx wytwarzanych metodą rozpylania magnetronowego i analiza ich współczynnika doskonałości"
No full textDane dotyczą wyników opublikowanych w artykule: "Właściwości elektryczne i optyczne cienkich warstw WOx wytwarzanych metodą rozpylania magnetronowego i analiza ich współczynnika doskonałości", Julia Dybała, Michał Mazur, DOI: 10.5604/01.3001.0016.2779Rys. 3. Zestawienie charakterystyk współczynnika transmisji światła w funkcji długości fali światła</p
Dane artykułu "Wyniki badań odpowiedzi gazochromowej na wodór cienkich warstw WO3 naniesionych za pomocą parowania wiązką elektronową"
No full textDane dotyczą wyników opublikowanych w artykule: "Wyniki badań odpowiedzi gazochromowej na wodór cienkich warstw WO3 naniesionych za pomocą parowania wiązką elektronową", Wiktoria Weichbrodt, Michał Mazur, DOI:10.5604/01.3001.0054.7919Rys. 4. Widma transmisji światła cienkiej warstwy WO3 wygrzewanej w temperaturze 400°CRys. 5a. Widma transmisji światła cienkiej warstwy WO3 wygrzewanej w temperaturze 400°C z naniesioną warstwą katalizatora podczas procesu gazochromowego dla stężenia wodoru 50 ppmRys. 5b. Widma transmisji światła cienkiej warstwy WO3 wygrzewanej w temperaturze 400°C z naniesioną warstwą katalizatora podczas procesu gazochromowego dla stężenia wodoru 500 ppmPomiary widm transmisji światła zostały wykonane z użyciem spektrofotometru Ocean Optics QE65000 i źródła DH-BAL 2000 z lampą halogenową i deuterową w zakresie spektralnym 300-1000 nm z wykorzystaniem oprogramowania SpectraSuite. Widma zmierzono podczas wprowadzania powietrza i mieszaniny H2/Ar o stężeniu wodoru 50 oraz 500 ppm dla różnych interwałów czasowych. Dane z rys. 4 zostały zebrane dla warstwy bez katalizatora, a z rys. 5a i 5b dla warstwy z katalizatorem Pd.</p
Data for the article entitled: "Analysis of amorphous tungsten oxide thin films deposited by magnetron sputtering for application in transparent electronics"
No full textFiles include the data presented in the manuscript entitled: "Analysis of amorphous tungsten oxide thin films deposited by magnetron sputtering for application in transparent electronics", by Mazur et al. https://doi.org/10.1016/j.apsusc.2021.151151)Fig. 2 presents XRD patterns of tungsten oxide thin films deposited with various Ar:O2 gas ratios.Fig. 3 presents XPS spectra of tungsten oxide thin films deposited with various Ar:O2 gas ratios: W4f and O1s core level.Fig. 5 presents transmission spectra of tungsten oxide thin films deposited with various Ar:O2 gas ratios.Fig. 8 presents spectra of refractive index and extinction coefficient for tungsten oxide thin films deposited with various Ar:O2 gas ratios.Fig. 11 presents temperature dependent resistivity of tungsten oxide thin films deposited with various Ar:O2 gas ratios.Fig. 13 presents charge decay time results of tungsten oxide thin films deposited with various Ar:O2 gas ratios.Fig. 15a presents hardness measurements of selected tungsten oxide thin films on Ar:O2 gas ratio during magnetron sputtering process.</p
Mazur intersection properties and differentiability of convex functions in Banach spaces
No full textIt is proved that the dual of a Banach space with the Mazur intersection property is almost weak* Asplund. Analogously, the predual of a dual space with the weak* Mazur intersection property is almost Asplund. Through the use of these arguments, it is found that, in particular, almost all (in the Baire sense) equivalent norms on [script l]1(Γ) and [script l][infty infinity](Γ) are Fréchet differentiable on a dense Gδ subset. Necessary conditions for Mazur intersection properties in terms of convex sets satisfying a Krein–Milman type condition are also discussed. It is also shown that, if a Banach space has the Mazur intersection property, then every subspace of countable codimension can be equivalently renormed to satisfy this property.Bulgarian National Foundation for Scientific InvestigationsDirección General de Investigación Científica y Técnica (España)Depto. de Análisis Matemático y Matemática AplicadaFac. de Ciencias MatemáticasTRUEpu
Data for the article entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering"
No full textFiles include the data presented in the manuscript entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering", by Mazur et al., https://doi.org/10.3390/app12188966 Fig. 1 presents dependence of the deposition rate of vanadium oxides thin films on the Ar:O2 gas ratio during magnetron sputtering.Fig. 2 presents diffraction patterns of vanadium oxides deposited with various Ar:O2 gas ratios.Fig. 3h presents an EDS spectrum of a thin film deposited with Ar:O2 ratio of 4:1.Fig. 4a presents transmission spectra of VxOy thin films deposited with various Ar:O2 gas ratios during the magnetron sputtering process.Fig. 6 presents the fundamental absorption edge of as‐deposited vanadium oxide thin films.Fig. 7 presents Current‐voltage characteristics of selected VxOy thin films prepared with Ar:O2 gas ratios of: 3:1, 7:1 and 8:1.Fig. 8 presents resistivity as a function of 1000/T of vanadium oxide thin films deposited with various Ar:O2 gas ratios during sputtering process.Fig. 11 presents thermoelectric characteristics of vanadium oxides thin films deposited with various Ar:O2 gas ratios.Fig. 12 presents gas response upon exposure to the 3.5% of hydrogen of as‐deposited VxOy thin films prepared using various Ar:O2 gas ratios during sputtering: 8:1, 7:1, 6:1, 5:1.Fig. 13a presents results of the hardness measurement for selected thin films.</p
Data for the article entitled: "Effect of Annealing on the Microstructure, Opto-Electronic and Hydrogen Sensing Properties of V2O5 Thin Films Deposited by Magnetron Sputtering"
No full textFiles include the data presented in the manuscript entitled: "Effect of Annealing on the Microstructure, Opto-Electronic and Hydrogen Sensing Properties of V2O5 Thin Films Deposited by Magnetron Sputtering", by Mazur et al., https://doi.org/10.3390/coatings12121885Fig. 1a presents X-ray diffraction patterns of V2O5 thin films annealed at various temperatures.Fig. 4a presents results of transmission spectra of V2O5 thin films annealed at various temperatures.Fig. 5 presents the determination of the optical band gap energy of V2O5 thin films annealed at various temperatures: as deposited, 423 K, 473 K, 523 K, 573 K, 623 K and 673 K.Fig. 7a presents results of current-voltage measurements of vanadium oxide thin films annealed at various temperatures.Fig. 7b presents measurements results of conductivity as a function of 1000/T measured for vanadium oxide thin films annealed at various temperatures.Fig. 9 presents thermoelectrical voltage characteristics of as-deposited and annealed vanadium oxide thin films with calculated Seebeck coefficients.Fig. 10a presents electrical resistance changes upon exposure to diluted hydrogen (3.5% in Ar) of V2O5 thin films annealed at various temperatures and measured at operating temperature of 473 K.Fig. 10b presents electrical resistance changes upon exposure to diluted hydrogen (3.5% in Ar) of V2O5 thin films annealed at 673 K and measured at various operating temperatures.</p
Data for the article entitled: "WO3 Thin-Film Optical Gas Sensors Based on Gasochromic Effect towards Low Hydrogen Concentrations"
No full textFiles include the data presented in the manuscript entitled: "WO3 Thin-Film Optical Gas Sensors Based on Gasochromic Effect towards Low Hydrogen Concentrations", by Mazur et al., https://doi.org/10.3390/ma16103831Fig. 1 presents X-ray diffraction patterns of WO3 thin films annealed at various temperatures.Fig. 3 presents results of transmission spectra of WO3 thin films annealed at various temperatures.Fig. 4 presents Tauc plots of WO3 thin films annealed at various temperatures with calculated optical energy band gaps.Fig. 5 presents comparison of average transmission in the visible wavelength range, fundamental absorption edge, and optical band gap energies of WO3 thin films annealed at various temperatures.Fig. 6 presents transmission spectra during colouring of WO3 thin films annealed at 473 K (Fig. 6a), 573 K (Fig. 6b) and 673 K (Fig. 6c) upon exposure to 200–1000 ppm H2.Fig. 7 presents variation in transmittance at 600 nm, 800 nm, and 900 nm during colouring/bleaching cycles of WO3 thin films annealed at 473 K (Fig. 7a), 573 K (Fig. 7b) and 673 K (Fig. 7c) upon exposure to 200–1000 ppm H2.Fig. 8 presents transmission spectra during colouring of WO3 thin film annealed at 673 K upon exposure to H2 concentrations of 25 ppm to 1000 ppm.Fig. 9 presents variation in transmittance at 600 nm, 800 nm, and 900 nm during colouring/bleaching cycles of WO3 thin film annealed at 673 K upon exposure to H2 concentrations of 25 to 1000 ppm.Fig. 10 presents Variation in extinction coefficient in time during colouring of WO3 thin film annealed at 673 K upon exposure to H2 concentration of: 25 ppm (Fig. 10a) and 1000 ppm (Fig. 10b).Fig. 11 presents Electron concentration in the function of time of the colouring cycle of WO3 thin film annealed at 673 K calculated based on the results of the extinction coefficient.</p
Localized Gouv\^ea-Mazur conjecture
No full textGouv\^ea-Mazur [GM] made a conjecture on the local constancy of slopes of
modular forms when the weight varies -adically. Since one may decompose the
space of modular forms according to associated residual Galois representations,
the Gouv\^ea-Mazur conjecture makes sense for each such component. We prove the
localized Gouv\^ea-Mazur conjecture when the residual Galois representation is
irreducible and its restriction to
is reducible and very
generic
Data for the article entitled: "Coloration mechanism in gasochromic thin films through the analysis of a complex refractive index", https://doi.org/10.1364/AO.474012
No full textFiles include the data presented in the manuscript entitled: "Coloration mechanism in gasochromic thin films through the analysis of a complex refractive index" by Mazur et al. (https://doi.org/10.1364/AO.474012)Fig. 1 presents theoretical characteristics of n^2-1 versus hv^2 and refractive index versus light wavelength. The dispersion of presented curves was calculated assuming variation of the resonance energy of the oscillator Eo and Eg for WO3 and WO2, respectively. Data was calculated with the aid of SCOUT software.Fig. 2 presents theoretical characteristics of extinction coefficient (k) versus wavelength (l) simulated for different concentrations of electrical charge carriers. Data was calculated using SCOUT software.Fig. 3 presents simulated theoretical transmission curves: WO3 with electron concentration of 10^16 cm^3, and WO2 with electron concentration of 5*10^18 cm^3. Data was calculated using SCOUT software.Fig. 6 presents transmission characteristics of the Pt=WO3 thin film deposited on fused silica glass, recorded in pure air and under 3.5% hydrogen. Measurements were done using experimental setup for gasochromic research, including, among others, Ocean Optics QE65000 spectrophotometer and DH-BAL 2000 light source.FIg. 7 presents Optical dispersion spectra of (a) real and (b) imaginary parts of the refraction index calculated from experimental transmission spectra for WO3 thin films investigated in pure air and under 3.5% hydrogen. Data was calculated using SCOUT software.Fig. 8 presents Characteristics of (a) n^2-1 versus hv^2 and (b) k versus lambda with linear approximation according to discussed Wemple–DiDomenico and Drude models for investigatedWO3 thin film. Data was calculated using OriginLab software.</p
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