2,302 research outputs found
Block-matching criterion for efficient VLSI implementation of motion estimation
No full textA new block-matching motion estimation criterion is presented, which can be implemented in VLSI more efficiently than the conventional criterion. The proposed scheme can reduce the amount of hardware required and increase the speed of computation in a VLSI chip with acceptable video performance. Video performance and VLSI implementation using the proposed criterion are presented
Generation of F0 contour using stochastic mapping and vector quantization control parameters
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Density functional calculations of the Schottky barrier height and effective work function in Ni/oxide interfaces
No full textIn high-k/metal gate stacks of complementary metal-oxide semiconductor devices, it is important to control the effective work functions of metals such that they should match to the doping levels of poly-Si gates. However, it is known that metal work functions are strongly affected by interface dipoles and defects. In this work, we perform first-principles density-functional calculations to study the Schottky barrier heights and the effective metal work functions in Ni/SiO2 and Ni/HfO2 interface structures. We use the advanced approaches such as hybrid density functional and quasi-particle GW calculations for the exchange-correlation potential and discuss the limitations of GGA calculations. We also examine the effects of O-vacancy defects introduced at the interface on the Schottky barrier height and the effective work function. We find that, in the Ni/HfO2 interface, the p-type Schottky barrier height tends to increase with increasing of the defect density due to the charge transfer at the interface, whereas it is little affected in the Ni/SiO2 interface
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates
No full textThe strain-relief and the structural properties of GaSb films with thin InAs, AlSb, and GaSb buffer layers grown on GaAs (001) substrates at low temperature (LT) by molecular beam epitaxy were investigated using atomic force microscopy, transmission election microscopy, and X-ray diffraction. The strain arising from depositing the thin buffer layer onto the GaAs substrate was relieved by a periodic array of 90 degrees misfit dislocations with a Burgers vector of 1/2a < 110 > for the AlSb/GaAs and the GaSb/GaAs systems, but by both 60 degrees and 90 degrees misfit dislocations for the InAs/GaAs system. The 90 degrees misfit dislocation arrays at the AlSb/GaAs and GaSb/GaAs interface had average spacing of 4.80 nm and 5.59 nm, respectively. The mean roughnesses and the full widths at half maximum of the rocking curves of the GaSb films on the thin AlSb and GaSb buffer layers were found, respectively, to be less than I nm and about three times lower than the corresponding values for the system with an InAs buffer layer. These results clearly demonstrate that the presence of a thin, low-temperature AlSb or GaSb buffer layer is very useful for improving the quality of GaSb crystals grown on GaAs substrates
Automatic gain-controlled bidirectional add/drop amplifier module for dynamically reconfigurable bidirectional WDM networks
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