20 research outputs found
Technical Physics Letters V. 24, I. 04
No full textTechnical Physics Letters -- April 1998
Volume 24, Issue 4, pp. 247-327
Growth of InAs photodiode structures from metalorganic compounds
S. S. Kizhaev, M. P. Mikhailova, C. C. Molchanov, N. D. Stoyanov, and Yu. P. Yakovlev
Full Text: PDF (98 kB)
Behavior of epitaxial GaAs layers as alpha particle detectors
V. M. Botnaryuk, Yu. V. Zhilyaev, A. M. Ivanov, N. B. Strokan, and L. M. Fedorov
Full Text: PDF (93 kB)
Recombination properties of silicon passivated with rare-earth oxide films
A. I. Petrov and V. A. Rozhkov
Full Text: PDF (48 kB)
Mutual synchronization and desynchronization of Lorenz systems
V. S. Anishchenko, A. N. Sil'chenko, and I. A. Khovanov
Full Text: PDF (91 kB)
As4 incorporation kinetics in GaAs (001) molecular-beam epitaxy
Yu. G. Galitsyn, I. I. Marakhovka, S. P. Moshchenko, and V. G. Mansurov
Full Text: PDF (106 kB)
Reconstruction of the x-ray emission spectrum of a nanosecond creeping discharge
P. N. Dashuk, S. L. Kulakov, and E. K. Chistov
Full Text: PDF (52 kB)
Model of high-Tc superconductivity in low-coordination semiconductors and polymers
B. P. Popov and K. D. Tséndin
Full Text: PDF (72 kB)
Crystal structure of silver clusters formed on a Si(100)–2 × 1 surface
M. V. Gomoyunova, I. I. Pronin, and N. S. Faradzhev
Full Text: PDF (1021 kB)
Effect of laser treatment on the gas sensitivity of tin dioxide films
V. A. Loginov, S. I. Rembeza, T. V. Svistova, and D. Yu. Shcherbakov
Full Text: PDF (48 kB)
Laser cleaning of a surface: a method for increasing analytical precision in laser mass spectrometry
P. A. Krasovskii, V. N. Nevolin, V. P. Ivanov, A. N. Pivovarov, and V. I. Troyan
Full Text: PDF (64 kB)
Stochastic generation accompanying parametric excitation of spin waves in yttrium iron garnet films
V. E. Demidov and N. G. Kovshikov
Full Text: PDF (66 kB)
Metastable states of a charged ellipsoidal drop
S. I. Shchukin and A. I. Grigor'ev
Full Text: PDF (116 kB)
Dynamical configurational excitations and the polarization of dielectrics under a load
Yu. A. Khon
Full Text: PDF (51 kB)
Modulation of capillary oscillations of a charged drop of low-viscosity liquid by its elastic oscillations
S. O. Shiryaeva and O. A. Grigor'ev
Full Text: PDF (76 kB)
Holographic memory based on the angular speckle-selectivity of volume holograms
V. B. Markov
Full Text: PDF (128 kB)
Twinning of bismuth single crystals bombarded by boron ions
V. S. Savenko, V. V. Uglov, O. M. Ostrikov, and A. P. Khodoskin
Full Text: PDF (225 kB)
Fabrication of InAs quantum dots on silicon
G. É. Cirlin, V. N. Petrov, V. G. Dubrovskii, S. A. Masalov, A. O. Golubok, N. I. Komyak, N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (235 kB)
Operating temperature of single-electron transistors
I. I. Abramov, I. A. Goncharenko, and E. G. Novik
Full Text: PDF (51 kB)
"Ecological" transformer-type plasmatron
É. B. Kulumbaev and V. M. Lelevkin
Full Text: PDF (78 kB)
Dichroic optically bistable cavity-free system
O. S. Bondarenko and V. A. Trofimov
Full Text: PDF (73 kB)
Numerical simulation of laminar flow round a cylinder with passive and active vortex cells
P. A. Baranov, S. A. Isaev, Yu. S. Prigorodov, and A. G. Sudakov
Full Text: PDF (170 kB)
Domain instability in an ensemble of dislocations during plastic deformation of crystals
G. F. Sarafanov
Full Text: PDF (84 kB)
Determination of electron transport coefficients in argon from ignition curves of rf and combined low-pressure discharges
V. A. Lisovskii
Full Text: PDF (77 kB)
Quantum oscillations of the differential resistance of superconductor–two-dimensional electron gas contacts
V. N. Gubankov, M. P. Lisitskii, and S. S. Shmelev
Full Text: PDF (57 kB)
Electric dynamic fatigue in ferroelectric complex oxides
V. G. Gavrilyachenko, N. V. Reshetnyak, L. A. Reznichenko, S. V. Gavrilyachenko, A. F. Semenchev, and S. I. Dudkina
Full Text: PDF (55 kB)
Negative turbulent heat conduction and its role in the formation of large-scale structures
G. V. Levina and S. S. Moiseev
Full Text: PDF (98 kB)
Influence of corrosion of a metal electrode on the polarization sensitivity of a photodetector based on an Ag–GaAs(InP) Schottky barrier with a corrugated interface
N. L. Dmitruk, O. Yu. Maeva, S. V. Mamykin, O. V. Fursenko, and O. B. Yastrubchak
Full Text: PDF (73 kB)
Topological phase of optical vortices in few-mode fibers
A. V. Volyar, V. Z. Zhilaitis, T. A. Fadeeva, and V. G. Shvedov
Full Text: PDF (98 kB)
Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix
V. N. Bogomolov, V. G. Golubev, N. F. Kartenko, D. A. Kurdyukov, A. B. Pevtsov, A. V. Prokof'ev, V. V. Ratnikov, N. A. Feoktistov, and N. V. Sharenkova
Full Text: PDF (50 kB)Archived web conten
Semiconductors V. 36, I. 03
No full textSemiconductors -- March 2002
Volume 36, Issue 3, pp. 239-362
ATOMIC STRUCTURES AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon
Kh. A. Abdulin, Yu. V. Gorelkinskii, B. N. Mukashev, and S. Zh. Tokmoldin
pp. 239-249 Full Text: PDF (141 kB)
Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions
V. M. Ardyshev and M. V. Ardyshev
pp. 250-253 Full Text: PDF (45 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Preexponential Factor in Mott's Law for Variable-Range-Hopping Conduction in Lightly Compensated p-Hg0.8Cd0.2Te Crystals
V. V. Bogoboyashchii
pp. 254-258 Full Text: PDF (81 kB)
E0 Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions
R. V. Kusmenko and É. P. Domashevskaya
pp. 259-262 Full Text: PDF (53 kB)
Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field
M. M. Gadzhialiev
pp. 263-264 Full Text: PDF (38 kB)
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films
A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, and M. O. Vorob'ev
pp. 265-269 Full Text: PDF (64 kB)
Effective Exciton Mass in III–V Semiconductors
N. S. Averkiev and K. S. Romanov
pp. 270-272 Full Text: PDF (41 kB)
Special Features of Charge Transport in PbGa2Se4 Crystals
B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov
pp. 273-275 Full Text: PDF (50 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Efficiency of the Intercalation of Aluminum Atoms under a Monolayer and Submonolayer Two-Dimensional Graphite Film on a Metal
N. R. Gall, E. V. Rut'kov, and A. Ya. Tontegode
pp. 276-281 Full Text: PDF (74 kB)
Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching
O. V. Feklisova, E. B. Yakimov, and N. A. Yarykin
pp. 282-285 Full Text: PDF (54 kB)
Internal Ionization Energy in II–VI Compounds
A. V. Komashchenko, V. N. Komashchenko, K. V. Kolezhuk, G. I. Sheremetova, V. D. Fursenko, and Yu. N. Bobrenko
pp. 286-289 Full Text: PDF (55 kB)
Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, and A. K. Gutakovskii
pp. 290-297 Full Text: PDF (169 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Properties of Ultradisperse CdSexTe1 – x (0 <= x <= 1) Particles in a Silicate Glass Matrix
I. V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solovei, P. V. Prokoshin, and K. V. Yumashev
pp. 298-306 Full Text: PDF (267 kB)
Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum in a Field of a Nonlinear Wave
S. V. Kryuchkov and É. G. Fedorov
pp. 307-310 Full Text: PDF (54 kB)
Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band
E. I. Golant and A. B. Pashkovskii
pp. 311-318 Full Text: PDF (91 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation
E. A. Konstantinova, V. Yu. Timoshenko, P. K. Kashkarov, V. G. Kytin, V. Ya. Gaivoronskii, H. Porteanu, Th. Dittrich, and F. Koch
pp. 319-324 Full Text: PDF (85 kB)
Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies
M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 325-329 Full Text: PDF (63 kB)
Changes in Properties of a /Silicon System during Gradual Etching off of the Porous Silicon Layer
E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, V. E. Primachenko, and V. A. Chernobai
pp. 330-335 Full Text: PDF (124 kB)
Carrier Transport in Porous Silicon
N. S. Averkiev, L. P. Kazakova, and N. N. Smirnova
pp. 336-339 Full Text: PDF (65 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Solar Cells Based on CuIn1 – xGaxSe2 Films Obtained by Pulsed Laser Evaporation
V. F. Gremenok, I. V. Bodnar', V. Yu. Rud', Yu. V. Rud', and H.-W. Schock
pp. 340-343 Full Text: PDF (57 kB)
Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
N. A. Pikhtin, S. O. Sliptchenko, Z. N. Sokolova, and I. S. Tarasov
pp. 344-353 Full Text: PDF (120 kB)
The Use of SiC Triode Structures as Detectors of Nuclear Particles
N. B. Strokan, A. M. Ivanov, N. S. Savkina, D. V. Davydov, E. V. Bogdanova, and A. A. Lebedev
pp. 354-357 Full Text: PDF (56 kB)
Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, and Yu. A. Nikolaev
pp. 358-361 Full Text: PDF (60 kB)
PERSONALIA
Igor' Georgievich Neizvestnyi (on his 70th birthday)
p. 362 Full Text: PDF (85 kB)Archived web conten
Numerical simulations of ignition features of premixtures in three-dimensional vortex flows
No full textCorruption of the Politicized University: Lessons from the Orange Revolution in Ukraine
No full textThis paper argues that corruption is used on a systematic basis as a mechanism of direct and indirect administrative control from the state level down to local authorities and administrations of public and private institutions. Informal approval of corrupt activities in exchange for loyalty and compliance with the regime is commonplace in many countries. This paper explains how corrupt regimes maximize their position in terms of loyalty and compliance by using the example of the 2004 presidential elections in Ukraine. It presents mechanisms by which political bureaucracies politicize universities in order to influence students and channel their electoral power during the Orange Revolution in Ukraine.corruption, elections, politicization, students, university, Ukraine
Influence of corrosion of a metal electrode on the polarization sensitivity of a photodetector based on an Ag-GaAs(InP) Schottky barrier with a corrugated interface
No full textCrystal structure of synthetic Mg3Cr2Si3O12, the high-pressure Cr end-member of the knorringite-pyrope garnet series
No full textKnorringite, the Cr-end-member of the pyrope garnet series (Nixon et al. 1968), often occur in high proportions in kimberlite garnets and is thus used for tracing high-pressure deep-earth conditions favorable to the formation of diamonds, in which knorringite-rich garnet can occur as inclusions. However, although the synthesis of knorringite is reported in the literature (Ringwood 1977; Irifune et al. 1982; Taran et al. 2004), the structure of the pure end-member has not been yet determined from experimental data. In this study, the crystal structure of knorringite, Mg3Cr2(SiO4)3, has been refined from high resolution synchrotron X-ray powder diffraction data recorded under ambient conditions on a polycrystalline sample synthesized at 12 GPa in a multi-anvil apparatus. The structure is cubic, space group Ia-3d, a = 11.5935(1), V = 1558.27(4) Å3, dcalc = 3.97 g.cm-3. The Cr-O distance of 1.957(2) Å is consistent with EXAFS results on the same sample. This short distance indicates a substantial compression of the CrO6 octahedron, compared to ambient pressure Cr3+-minerals such as uvarovite ( = 1.99 Å, Andrut and Wildner 2002). Our experimental results thus confirm early empirical predictions based on series of high-pressure Cr-garnet end-members (Fursenko 1981), showing that the values of the Cr-O distance and the Cr-O-Si angle decrease with the augmentation of pressure and with the diminution of the size of the divalent cation
Atomic-scale engineering of future high-k dynamic random access memory dielectrics
No full textArt. 01AC031, 7 S.Controlled substitution of Hf4+ by Ti4+ ions in thin BaHfO3 was investigated in view of future dynamic random access memory (DRAM) applications. The 50% substitution of Hf ions reduces the crystallization temperature by about 200 °C with respect to BaHfO 3 layers making the BaHf0.5 Ti0.5 O3 layers compatible with DRAM processing. The resulting cubic BaHf0.5 Ti0.5 O3 dielectrics show k90 after rapid thermal annealing at 700 °C which is three times higher than for BaHfO3 at similar temperatures. Leakage current values of 4× 10-5 A/ cm2 at 0.5 V for Pt/ BaHf0.5 Ti0.5 O 3 /TiN capacitors with capacitance equivalent thickness <0.8 nm are achieved. Synchrotron-based photoelectron spectroscopy in combination with nanoscopic conductive atomic force microscopy measurements reveals that the use of high work function electrodes and homogeneous film deposition techniques is crucial for controlling the leakage current.29Nr.
Structural evolution of natrolite during over-hydration: a high-pressure neutron diffraction study
No full textThe crystal structure of deuterated natrolite, Na 1.85Mg 0.05Ca 0.03[Al 2.06Si 2.95O 10]·nD 2O, compressed in liquid D 2O at 0.9 and 1.0 GPa has been determined from neutron powder diffraction data. At 0.9 GPa, the crystal structure is close to the original natrolite with the same space group Fdd2 and 1 % smaller unit cell volume. New water positions are found in addition to the original ones indicating the early stage of natrolite over-hydration. The unit cell volume of high-pressure phase stable at 1.0 GPa is expanded by 5.4 % with respect to initial natrolite. According to structural investigations, HP phase contains 3.5 water molecules pfu. Higher degree of hydration is accompanied by the drastic rearrangement of extra-framework subsystem, water molecules occupying four independent positions. Three of them belong to Na + coordination sphere and together with three framework O-atoms form a distorted octahedron. Water molecule in the fourth position (occupancy = 0.5) has no contact to the cations. The evolution of natrolite structure with increasing pressure is discussed in terms of framework flexibility and hydrogen bonding rearrangement. © 2005 E. Schweizerbart'sche Verlagsbuchhandlung
Nauka o knige tradicii i innovacii ; materialy Dvenadcatoj Meždunarodnoj Naučnoj Konferencii po Problemam Knigovedenija, Moskva, 28 - 30 aprelja 2009 g. ; k 50-letiju sbornika "Kniga : issledovanija i materialy" ; v četyrech častjach
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