122 research outputs found
Investigation of Gallium–Boron Spin‐On Codoping for poly‐Si/SiO<sub><i>x</i></sub> Passivating Contacts
No full textSpin‐on Doping In article number 2100653, Thien N. Truong, Josua Stuckelberger, Hieu T. Nguyen, and co‐workers explored the possibility of p‐type co‐doping poly‐Si/SiOx passivating contacts using the spin‐on method with different mixtures of Ga and B glass solutions
Enhanced lateral photovoltaic effect in 3C-SiC/Si heterojunction under external electric field
No full textPosition-sensitive detector (PSD) is a popular type of noncontact optical position sensor that has important roles in various applications. Cubic-silicon carbide on silicon (3C-SiC/Si) is a promising platform to develop optoelectronic sensors for harsh environment applications thanks to the superior robustness of the SiC, the low wafer cost, and the high compatibility with the well-established Si micro/nano fabrication technology. Here, we report an enhanced lateral photovoltaic effect (LPE) in 3C-SiC/Si heterojunction under an external electric field, and demonstrate the effect in an ultrasensitive PSD. We observed a position sensitivity of 1550 mV/mm, which is a five-time increase compared to the case without electric field. The generation and transport of the photo-induced charge carriers are investigated by examining the band diagram of the 3C-SiC/Si heterojunction to provide a detail explanation of the phenomenon. Our findings in this work demonstrate the potential of the 3C-SiC/Si heterojunction to develop high-performance noncontact optical sensors for harsh environment applications.Full Tex
Enhancing photochemical conversion with an ultra-thin TiO2 film coupled to a self-organized plasmonic nanowire electrode
No full textSeebeck coefficient in SiC/Si heterojunction for self-powered thermal sensor
No full textDevelopment of new materials with high thermoelectric coefficient will expand the capability of thermoelectric sensors. In this work, we investigate the thermoelectric properties of silicon carbide (SiC) on silicon (Si) heterojunction towards self-powered temperature sensing applications. A SiC/Si heterojunction device was designed and fabricated to measure the Seebeck coefficient. The device showed a high Seebeck coefficient of -156.11 V at 336 K, which progressively increased with increasing temperature and reached -374.78 V at 383 K. These thermoelectric characteristics indicate superior result compared to previous polycrystalline and monocrystalline SiC thin films. The innovative heterojunction demonstrated in this work holds promises for developing highly sensitive self-powered thermal sensors.No Full Tex
Flat-optics photon harvesting in large-scale 2D semiconductor layers for photoconversion applications
No full textLarge-area self-organized plasmonic gold nanowire matrix for advanced photochemical applications
No full textSelf-Organized Plasmonic Nanowire Arrays Coated with Ultrathin TiO2 Films for Photoelectrochemical Energy Storage
No full textThe strategic field of renewable energy production and storage requires novel nanoscale platforms that can feature competitive solar energy conversion properties. Photochemical reactions that promote energy storage, such as water splitting and oxygen-hydrogen evolution reactions, play a crucial role in this context. Here, we demonstrate a novel photoelectrochemical device based on large-area (cm(2)) self-organized Au nanowire (NW) arrays, uniformly coated with ultrathin TiO2 films. The NW arrays act both as transparent nanoelectrodes and as a plasmonic metasurface that resonantly enhances the very weak visible photocurrent generated by a prototype photoelectrochemical oxygen evolution reaction. We demonstrate a polarization-sensitive plasmon-enhanced photocurrent that reaches a gain of about 3.8 in the visible spectral range. This highlights the potential of our novel nanopatterned plasmonic platform in photochemistry and energy storage
Plasmonic and 2D-TMD nanoarrays for large-scale photon harvesting and enhanced molecular photo-bleaching
No full textThe urgent environmental and energy challenges require novel solutions for efficient light harvesting and conversion in new-generation ultra-thin devices. Plasmonic nanoantennas and flat optics nanogratings can promote light matter interaction at the nanoscale being very attractive for ultra-thin photonics and sensing applications. In this work we developed two light trapping solutions based on large-scale nanomaterials. The first system is a large-scale (cm2) plasmonic metasurface based on self-organized gold nanostripes. The second is based on the periodic re-shaping of ultra-thin semiconducting MoS2 layers forming large-area flat-optics nanogratings. Under this condition Rayleigh Anomalies can be resonantly excited thus promoting in-plane light confinement and photon absorption into the few-layers material. To demonstrate the impact of these nanopatterned systems in photon harvesting we probed their efficiency into a prototypal photochemical reaction: the photo-bleaching of Methylene Blue (MB). We demonstrate the resonant enhancement of the photo-bleaching of these polluting dye molecules promoted either by the localized plasmon resonance in Au nanostripes or by the Rayleigh Anomaly in flat-optics MoS2 nanogratings. We investigate this effect through a quantitative analysis of the solution photodissociation induced by a monochromatic light. These results show the strong potential of flat-optics templates for light-harvesting and energy conversion in ultra-thin photonic devices
Hydrogenation in doped poly-Si passivated contact solar cells
No full textIn c-Si solar cells, doped poly-Si/SiOx stacks both form carrier selective
junctions and provide excellent surface passivation. They are key
components of novel passivating-contact solar cell structures.
The doped poly-Si films often contain a high density of defects which can
potentially affect the quality of the passivating-contact structures and thus
the overall performance of the solar cells.
Hydrogenation techniques could be used to passivate defects within the
doped poly-Si films themselves to improve the overall performance of
doped poly-Si/SiOx passivating contacts. Here, we explore such
possibilitie
Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration
No full textIt is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 μW illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.No Full Tex
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