28,412 research outputs found
Amaranthus blitoides S. Watson, Proc. Amer. Acad. Arts
No full text4.2. <i>Amaranthus blitoides</i> S.Watson, Proc. Amer. Acad. Arts 12: 273. 1877. <p> Lectotype (designated by Fernald 1945: 139):— <i>U.S.A. Iowa: Ames, gravelly or sandy soils especially around buildings and along roads, Bessey s.n.</i> (GH00036983!, image of the lectotype available at https://kiki.huh.harvard.edu/databases/specimen_ search.php?mode=details&id=58020).</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 231, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Gomphrena L.
No full text7. <i>Gomphrena</i> L., Sp. Pl. 1: 224. 1753. <p> Type (designated by Hitchcock 1929: 137): <b>—</b> <i>Gomphrena globosa</i> L.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 237, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Alternanthera Forssk., Fl.
No full text3. <i>Alternanthera</i> Forssk., Fl. Aegypt.-Arab.: 28. 1775. <p> Lectotype (designated by Melville 1958: 172): <b>—</b> <i>Alternanthera sessilis</i> (L.) DC.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 230, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Celosia L.
No full text5. <i>Celosia</i> L., Sp. Pl. 1: 205. 1753. <p> Type (designated by Hitchcock 1929: 135): <b>—</b> <i>Celosia argentea</i> L.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 235, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Pupalia Juss., Ann. Mus. Natl. Hist. Nat.
No full text10. <i>Pupalia</i> Juss., Ann. Mus. Natl. Hist. Nat. 2: 132. 1803 <p> Type (Jussieu 1803: 132): <b>—</b> <i>Pupalia lappacea</i> (L.) Juss.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 239, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Amaranthus L.
No full text4. <i>Amaranthus</i> L., Sp. Pl. 2: 989. 1753. <p> Type (lectotype designated by Green 1929: 188): <b>—</b> <i>Amaranthus caudatus</i> L.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 231, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Psilotrichum Blume, Bijdr. Fl. Ned. Ind.
No full text9. <i>Psilotrichum</i> Blume, Bijdr. Fl. Ned. Ind.: 544. 1826. <p> Type (Blume 1826: 544): <b>—</b> <i>Psilotrichum trichotomum</i> Blume.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 237, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Saltia Moq., Prodr.
No full text11. <i>Saltia</i> R.Br. ex Moq., Prodr. 13(2): 325. 1849. <p> Type (Moquin-Tandon 1849: 325): <b>—</b> <i>Saltia papposa</i> (Forrsk.) Moq.</p>Published as part of <i>Hassan, Walaa A., Al-Shaye, Najla A. & Iamonico, Duilio, 2023, A critical inventory of the family Amaranthaceae s. str. in Saudi Arabia, pp. 223-246 in Phytotaxa 626 (4)</i> on page 239, DOI: 10.11646/phytotaxa.626.4.1, <a href="http://zenodo.org/record/10212988">http://zenodo.org/record/10212988</a>
Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage
No full textThis paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1 − x)MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temperature and the size of the (DMS) layers was discussed. The diluted magnetic layers Ga(1 − x)MnxAs behave as barriers for spin-up holes and quantum wells for spin-down holes. Furthermore, we have addressed the impact of an applied bias voltage and the temperature on the variation of the spin-polarization and spin current densities. Our findings reveal that the transmission coefficients present an oscillating behavior due to the resonant states and strongly depend on the temperature of the system and the number of magnetic layers. Furthermore, the obtained results demonstrated that the number of these states is multiplied by augmenting the magnetic layers. Moreover, we demonstrate that the asymmetric structure presents a completely different transmission of holes than the symmetric structure. Furthermore, the negative differential resistance (NDR) is demonstrated in the current density variations. Especially, this (NDR) was more intense for spin-up holes than spin-down holes. The findings in the present paper can be useful in manufacturing spin-filters by adjusting the values of the temperature and the external voltages
Linear and nonlinear optical properties in GaAs quantum well based on konwent-like potential: Effects of impurities and structural parameters
No full textThe optical absorption coefficients (OACs), refractive index changes (RICs), and electronic states in konwent-like quantum well under the effects of silicon impurities were studied within the framework of the effective mass approximation (EMA). Firstly, the subband energy levels and their probability densities are determined by solving Schrodinger-Poisson equations iteratively. Once these quantities are computed, we have addressed different OACs and RICs (linear and nonlinear) between the ground and the first excited levels. We have considered two positions of the silicon-doped layer. The first one is at the center of the structure and the second one is inside the left potential well. Our findings indicate that in the case of doping at the center, an increase in the concentration of the doped layer reduces the energy levels of the ground and the first excited states. However, when the doped layer is moved to the left well, its concentration increase augments the energy of the first excited state and diminishes that of the ground state. This behavior of energy levels and wavefunctions is attributed to the newly created triangular well around the doped layer. Moreover, the impact of the structural parameters and their impact on the red/blue shift of the (OACs) and (RICs) have been discussed in detail. As a consequence, the concentration and position of the doped layer as well as the structural parameters constitute an important tool to modify the shape of the confining potential which leads to additional control of the energy states and optical properties of different heterostructures based on konwent-like quantum wells.Deputyship for Research amp; Innovation, Ministry of Education in Saudi Arabia; [IFP22UQU4331235DSR177]The authors extend their appreciation to the Deputyship for Research & Innovation, Ministry of Education in Saudi Arabia for funding this research work through the project number: IFP22UQU4331235DSR177
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