1,721,181 research outputs found
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si
No full textTransient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si/sup +/ and As/sup +/ ions
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Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion
No full textWhile it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms behind this process are still unclear. In this work we report experimental studies about the F control of the point defect density in preamorphized Si layers. These studies put the basis for the understanding of the F behavior and for the realization of ultra-shallow junctions. We first investigated the F incorporation process during the solid phase epitaxy (SPE) of amorphous Si layers. We elucidated the role of the SPE temperature on the F incorporation and suggested a new route towards a F profile engineering. Moreover, we explained the role of F in modifying the point defect population (self-interstitials, Is, and vacancies, Vs), employing B and Sb spike layers as markers for Is and Vs, respectively. We clearly showed that F decreases the B diffusion while enhances the Sb one, pointing out the capacity to induce an Is undersaturation or a Vs supersaturation. These data rule out the hypothesis of a chemical bonding between F and the dopants. Such F ability in modifying the Is/Vs density resulted to be a transient effect, because strictly correlated with the presence of F in the Si samples, which decreases with the annealing time. In addition, we evidenced that even if F is spatially separated from B, i.e., localized between shallow-implanted B and the end-of-range (EOR) region, it still suppresses the enhancement of B diffusivity, due to the EOR defects dissolution. These studies, besides improving the current understanding of the physical mechanisms by which F influences the dopant diffusion in Si, could be helpful for the realization of ultra-shallow junctions for the future metal-oxide-semiconductor devices
Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: methods and applications
No full textPoint defect engineering in preamorphized silicon enriched with fluorine
No full textFluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the, role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able to completely suppress the boron transient enhanced diffusion (TED), but can enhance the antimony diffusion. These experimental data demonstrate the ability of F in inducing an Is undersaturation or a Vs supersaturation, ruling out the hypothesis of a chemical bonding between F and the dopants. These results improve the engineering of F-enriched Si, for the realization of ultra-shallow junctions
E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface
No full textA novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching
No full textTransient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
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