1,721,144 research outputs found
Simulation of the deposition and aging of thin island films
No full textTwo-dimensional atomistic simulations of the growth and post-deposition behaviour of island metal films are described. The program includes a module for the calculation of the film resistance on the basis of a charge limited tunnelling model. The dependence of the resistance on various deposition parameters is investigated. Examples of simulated post-deposition resistance drift are shown. Copyright (C) 1998 Elsevier Science B.V
CURRENT VS VOLTAGE CHARACTERISTICS OF ION-BEAM-GROWN POLYMER METAL GRANULAR THIN-FILMS
No full textCurrent-voltage characteristics of polymer-metal granular thin films in the dielectric regime of conduction were measured in the temperature range from 13 K to room temperature. Non-ohmic behaviour was observed at the lowest temperatures. The curves were fitted by a relationship derived from a direct tunnelling model. We show that estimates of the activation energy of the dominant charge transfer process can be obtained from the parameters of the fit
ANALYSIS OF THE INFLUENCE OF SPATIALLY LOCALIZED OXIDE TRAPS ON THE CAPACITANCE OF MIS TUNNEL-DIODES
No full textA method is proposed to calculate the capacitance of conducting MIS diodes based on a proper solution of the Poisson equation, which holds for any type of trap distribution in the oxide layer. This approach allows us to calculate the electric field and the voltage drop along the whole MIS structure, thus arriving at a general expression of its capacitance. By using these results, we obtain, as a special case, the usual expression for MIS diode capacitance in the presence of interfacial states. The theoretical 1/C2 vs reverse voltage characteristics of junctions with spatially distributed oxide traps present different slopes and voltage axis intercepts in comparison with those calculated by localizing interfacial states at the insulator/semiconductor interface only
EFFECTS OF INTERFACIAL STATES ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF PD/SIO2/N-SI SCHOTTKY DIODES
No full textOn the capacitance of metal/thin oxide/semiconductor structures with localized oxide states
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