520 research outputs found
Differential expression of carcinoembryonic antigen CEA in early gastric adenocarcinomas versus benign gastric lesions defined by monoclonal antibodies reactive with restricted antigen epitopes
No full textMonoclonal Antibody B72: 3 Reactivity with Human Endometrium : a Study of Normal and Malignant Tissues.
No full textAdjuncts to the Diagnostic Distinction between Adenocarcinomas of the Ovary and the Colon Utizing a Monoclonal Antibody ( COL-4) with Restricted CEA Reactivity
No full textDefect chemistry and thermoelectric behavior of n-type SrxBa1-xNb2O6
No full textThesis (Ph.D.)--University of Washington, 2015Complex oxides with an intricate atomic structure and tunable stoichiometry are promising materials for use in high-temperature thermoelectric (TE) generators. Among this class of ceramics, highly disordered relaxor ferroelectrics are particularly interesting due to their very low thermal conductivity (κ), which serves to increase the dimensionless figure of merit (ZT). In this work, the defect chemistry and TE behavior of the n-type relaxor SrxBa1-xNb2O6 (SBN100x) were investigated. A solution combustion synthesis (SCS) route was first devised to fabricate SBN nanoparticles with excellent phase purity. X-ray photoelectron spectroscopy (XPS) data obtained for various SBN compositions confirmed that Sr atoms occupy two positions in the tetragonal tungsten bronze SBN lattice; a higher binding energy state was associated with Sr ions at pentagonal (A2) sites, presumably due to their increased coordination over Sr at tetragonal (A1) positions. Reduction heat treatments were carried out to raise the electrical conductivity (σ) of sintered SBN50 specimens, and a decrease in the average Nb valence was observed through the growth of lower binding energy Nb 3d XPS peaks. Both the Ba 3d photoemission and the A2 component of the Sr 3d spectra show shifting to lower binding energy as the reduction time is increased, indicating possible preferential oxygen vacancy formation adjacent to A2 sites. Electron transport by variable range hopping was identified at low temperatures (105 - 150 K), followed by a transition to small polaron hopping from 230 to ~550 K. Above ~550 K, the temperature dependence of σ becomes metallic-like (i.e., dσ/dT < 0), consistent with an Anderson transition; such a scenario is supported by high-temperature Seebeck coefficient (S) measurements. Based on the identified behavior, polymethylmethacrylate (PMMA) pore formers were utilized with the goal of decreasing κ through enhanced phonon scattering while preserving the electron transport characteristics. With the introduction of PMMA into SBN50 prior to sintering, κ was reduced by an average of 44%, and a slight increase in the power factor (S2σ) was observed. Ultimately, a substantial increase in ZT by ~128% on average (peak value of 0.14 at 873 K) was achieved for SBN50 processed with 5 wt% PMMA
Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces
No full textThesis (Master's)--University of Washington, 2016-12Silicon oxides thermally grown on Si surface are the core gate materials of metal-oxide-semiconductor field effect transistor (MOSFET). This thin oxide layer insulates the gate terminals and the transistors substrate which make MOSFET has certain advantages over those conventional junctions, such as field-effect transistor (FET) and junction field effect transistor (JFET). With an oxide insulating layer, MOSFET is able to sustain higher input impedance and the corresponding gate leakage current can be minimized. Today, though the oxidation process on Si substrate is popular in industry, there are still some uncertainties about its oxidation kinetics. On a path to clarify and modeling the oxidation kinetics, a study of initial oxidation kinetics on Si (001) surface has attracted attentions due to having a relatively low surface electron density and few adsorption channels compared with other Si surface direction. Based on previous studies, there are two oxidation models of Si (001) that extensively accepted, which are dual oxide species mode and autocatalytic reaction model. These models suggest the oxidation kinetics on Si (001) mainly relies on the metastable oxygen atom on the surface and the kinetic is temperature dependent. Professor Yuji Takakuwa’s group, Surface Physics laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, observed surface strain existed during the oxidation kinetics on Si (001) and this is the first time that strain was discovered during Si oxidation. Therefore, it is necessary to explain where the strain comes from since none of previous model research included the surface strain (defects generation) into considerations. Moreover, recent developing of complementary metal-oxide-semiconductor (CMOS) requires a simultaneous oxidation process on p- and n-type Si substrate. However, none of those previous models included the dopant factor into the oxidation kinetic modeling. All of these points that further work is necessary to update and modify the traditional Si (001) oxidation models that had been accepted for several decades. To update and complement the Si (001) oxidation kinetics, an understanding of the temperature and dopant factor during initial oxidation kinetics on Si (001) is our first step. In this study, real-time photoelectron spectroscopy is applied to characterize the oxidized (001) surface and surface information was collected by ultraviolet photoelectron spectroscopy technique. By analyzing parameters such as O 2p spectra uptake, change of work function and the surface state in respect of p- and n- type Si (001) substrate under different temperature, the oxygen adsorption structure and the dopant factor can be determined. In this study, experiments with temperature gradients on p-type Si (001) were conducted and this aims to clarify the temperature dependent characteristic of Si (001) surface oxidation. A comparison of the O 2p uptake, change of work function and surface state between p-and n-type Si (001) is made under a normal temperature and these provides with the data to explain how the dopant factor impacts the oxygen adsorption structure on the surface. In the future, the study of the oxygen adsorption structure will lead to an explanation of the surface strain that discovered; therefore, fundamental of the initial oxidation on Si (001) would be updated and complemented, which would contribute to the future gate technology in MOSFET and CMOS
大内義興の死と備芸石の動乱 : 享禄二年の安芸松尾城の高橋氏攻めと毛利元就
No full textDuring the early half of the 16th century, the northern regions of Bingo and Aki and the eastern region of Iwami were 境目 (sakaime) or border areas where AMAGO in Izumo and OHUCHI in Yamaguchi were conflicting.
After OHUCHI Yoshioki died in December of the 1st year of Kyoroku (1528 A.D.), AMAGO Tsunehisa began to attack OHUCHI's 国衆 (kunishu) or land lords. First he beat the TAGANOYAMA family in the northern part of Bingo, and submitted them. Then AMAGO took the TAKAHASHI family on his side who had controlled large areas in Aki and Iwami, and who was the leader of the union of three provinces which were on OHUCHI's side. And TAKAHASHI also had marital relations with MOHRI and possessed an adjacent area near MOHRI's domain. In April of the 2nd year of Kyoroku (1529A.D.) TAKAHASHI who became to join AMAGO's side tried to confuse MOHRI's vassals and to divide them into two. It finally caused turbulences in the MOURI family.
In May, on the other hand, OHUCHI Yoshitaka (Yoshioki's heir) gave an order to his land lords that, as he would give MOHRI Motonari the position of the union leader which Takahashi had kept, all the land lords should cooperate with MOHRI in military actions. Then the ally of OHUCHI, MOHRI, SHISHIDO and WACHI warriors attacked the TAKAHASHI family at Matsuo Castle in Aki Province and TAKAHASHI was destroyed.
Recently a new report says that the attack was in May of the 3rd year of Kyoroku Era (1530 A.D.), but not of the 2nd year. The author wanted to make it clear. So, in this paper, some dozen old manuscripts in the 2nd and 3rd year of Kyoroku Era chosen out of the author's collections were studied more precisely and more concretely. After the respective affairs were placed according to the correct order of time, a whole image of those days could be pictured better. As a result it was proved that the date was May of the 2nd year.
The author also could clarify the contents of SUE Okifusa's (OHUCHI's chief vassal) letter dated May 28th of the 3rd year of Kyoroku Era, a part of which was taken to be the only basis of the new report. Actually that part meant SUE Okifusa's anxieties that TAKAHASHI's previous vassals and village warriors might raise a riot. But the main purpose in his long letter was not in that part, but in its last line where he ordered MOHRI to dispatch his warriors to Iwami in order to help his master OHUCHI because his castle in the eastern part of Iwami had been attacked. Therefore the results were as follows: ① the new report was concluded according to only a part of Sue Okifusa's letter, ② the reporter had not read through SUE's long letter, either, and in addition, ③ there were some unnatural steps toward his conclusion with not a few doubts on its evidences and arguments.
Generally speaking, the death of OHUCHI Yoshioki caused the attack to Matsuo Castle and the ruin of the TAKAHASHI clan. The most important historical phase was that, after the battles, MOHRI Motonari obtained the top position of the union of land lords in Bingo, Aki and Iwami on OHUCHI's side. And thereafter his leadership made the MOHRI clan gradually enlarge the areas under his control and finally destroy SUE and OHUCHI
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Imaging of histamine H1 receptors in human brains with pet and [C-11]doxepin
No full textHistamine HI receptors (HIRs) are associated with awareness and cognition. The abnormal activity of HIRs are also observed in several diseases such as Alzheimer disease. Therefore, visualizing the activity of H I R in the brain is clinically important. The purposes of this study are to establish the methodology for quantitative evaluation of HIRs in the brains with PET and [C-11]doxepin ([C-11]DOX), and to develop the simplified PET measurement for H I R. The estimated parameters with a two-compartment model were stable for the initial values for parameter estimation but those with a three-compartment model were not. This finding suggests that the H1R measured by [C-11]DOX-PET can be evaluated with a two-compartment model. In next experiment, we developed the simplified PET measurement for H1R. That is, we tried to shorten the duration of [C-11]DOX-PET scans. The time-activity curves in tissue (tTAC) in the later stage (70 - 80 min after the injection of [C-11]DOX) normalized with the radioactivity in plasina at 10 min after the injection of [C-11]DOX showed the good correlations to distribution volume estimated with a two-compartment model. These finding demonstrates that brain images reflecting HIR density can be obtained by using static PET images scanned from 70 - 80 min and one point arterial blood sampling at 10 min afler the injection of [C-11]DOX
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Use of reference tissue models for quantification of histamine H-1 receptors in human brain by using positron emission tomography and [C-11]doxepin
No full textThe aim of the present study is to evaluate the validity of the Simplified Reference Tissue Model (SRTM) and of Logan Graphical Analysis with Reference Tissue (LGAR) for quantification of histamine H-1 receptors (H1Rs) by using positron emission tomography (PET) with [C-11]doxepin. These model-based analytic methods (SRTM and LGAR) are compared to Logan Graphical Analysis (LGA) and to the one-tissue model (1TM), using complete datasets obtained from 5 healthy volunteers. Since H1R concentration in the cerebellum can be regarded as negligibly small, the cerebellum was used as a reference tissue in the present study. The comparison of binding potential (BP) values estimated by LGAR and 1TM showed good agreement, on the other hand, SRTM was unstable concerning parameter estimation in several regions of the brain. By including the results of noise analysis, LGAR became a reliable method for parameter estimation of [C-11]doxepin data in the cortical regions
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