17 research outputs found
Interplay between magnetic order and electronic band structure in ultrathin GdGe2 metalloxene films
No full text: Dimensionality can strongly influence the magnetic structure of solid systems. Here, we predict theoretically and confirm experimentally that the antiferromagnetic (AFM) ground state of bulk gadolinium germanide metalloxene, which has a quasi-layered defective GdGe2 structure, is preserved in the ultrathin film limit. Ab initio calculations demonstrate that ultrathin GdGe2 films present in-plane intra-layer ferromagnetic coupling and AFM inter-layer coupling in the ground state. Angle-resolved photoemission spectroscopy finds the AFM-induced band splitting expected for the 2 and 3 GdGe2 trilayer (TL) films, which disappear above the Néel temperature. The comparative analysis of isostructural ultrathin DyGe2 and GdSi2 films confirms the magnetic origin of the observed band splitting. These findings are in contrast with the recent report of ferromagnetism in ultrathin metalloxene films, which we ascribe to the presence of uncompensated magnetic moments
The Use of Digital Lab and Tabular Editor Excel When Solving Experimental Problems in Physics
No full textThe Use of Digital Lab and Tabular Editor Excel When Solving Experimental Problems in Physics
No full textUnveiling the stacking-dependent electronic properties of 2D ultrathin rare-earth metalloxenes family LnX (Ln = Eu, Gd, Dy; X = Ge, Si)
No full textThe studies of electronic effects in reduced dimensionality have become a
frontier in nanoscience due to exotic and highly tunable character of quantum
phenomena. Recently, a new class of 2D ultrathin Ln metalloxenes composed
of a triangular lattice of lanthanide ions (Ln) coupled with 2D-Xenes of
silicene or germanene () was introduced and studied with a particular
focus on magnetic and transport properties. However, the electronic properties
of metalloxenes and their effective functionalization remain mainly unexplored.
Here, using a number of experimental and theoretical techniques, we trace the
evolution of electronic properties and magnetic ground state of metalloxenes
triggered by external perturbations. We demonstrate that the band structure of
Ln films can be uniquely modified by controlling the Xenes stacking,
thickness, varying the rare-earth and host elements, and applying an external
electric field. Our findings suggest new pathways to manipulate the electronic
properties of 2D rare-earth magnets that can be adjusted for spintronics
applications.Comment: 7 pages, 3 figure
Theory versus experiment for a family of single-layer compounds with a similar atomic arrangement: <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>(</mml:mo><mml:mtext>Tl</mml:mtext><mml:mo>,</mml:mo><mml:mi>X</mml:mi><mml:mo>)</mml:mo><mml:mo>/</mml:mo><mml:mtext>Si</mml:mtext><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo>×</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo>(</mml:mo><mml:mrow><mml:mi>X</mml:mi><mml:mo>=</mml:mo><mml:mtext>Pb</mml:mtext><mml:mo>,</mml:mo><mml:mtext>Sn</mml:mtext><mml:mo>,</mml:mo><mml:mtext>Bi</mml:mtext><mml:mo>,</mml:mo><mml:mtext>Sb</mml:mtext><mml:mo>,</mml:mo><mml:mtext>Te</mml:mtext><mml:mo>,</mml:mo><mml:mtext>Se</mml:mtext><mml:mo>)</mml:mo></mml:mrow></mml:math>
No full textИспользование цифровой лаборатории и табличного редактора Excel при решении экспериментальных задач по физике
No full textC60 capping of metallic 2D Tl-Au compound with preservation of its basic properties at the buried interface
No full textSo-called metal-induced silicon reconstructions (i.e., metal films of monolayer or submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high vacuum) represent a specific class of low-dimensional advanced materials with potential prospects for electronic and spintronic applications. However, they are highly vulnerable to air and, thus, require protective capping. Finding a suitable material is a challenging task, since, in general, the metal-induced reconstructions are vulnerable also to overgrowth of solid layers. In the present study, we have found that C60 fullerite film shows up as a proper capping layer for the (Tl, Au)/Si(1 1 1) 7 х 7 compound reconstruction. Due to a perfect non-distractive epitaxial C60 overgrowth, the metallic Tl-Au compound preserves at the deeply buried interface its atomic structure and all basic electronic properties, including spin-splitting of surface-state bands and conductivity of metallic type with a weak antilocalization effect
(Tl, Au)/Si(111) and (Tl, Au)/Si(100) 2D compounds: Atomic and electronic structure and transport properties
No full textSingle layer nickel disilicide on surface and as embedded layer
No full textSingle monolayers of various materials (e.g. graphene, silicene, bismuthene, plumbene, etc) have recently become fascinating and promising objects in modern condensed-matter physics and nanotechnology. However, growing a monolayer of non-layered material is still challenging. In the present report, it will be shown that single monolayer NiSi2 can be fabricated at Si(111) surface stabilized by either Tl, Pb or In monolayers. Nickel atoms were found to intercalate the stabilizing metal layers upon deposition and to reside in the interstitial sites inside the first silicon bilayer of bulk-like-terminated Si(111)1×1 surface. The interstitial positions almost coincide with the bulk NiSi2 atomic positions thus forming NiSi2 single layer. Atomic and electronic structure of formed systems is described in detail by means of a set of experimental techniques, including low-energy electron diffraction, scanning tunneling microscopy, angle-resolved photoemission spectroscopy and also first-principles density-functional-theory calculations. Quality of formed single monolayer NiSi2 was additionally confirmed by in situ four-probe transport measurements that show that single monolayer NiSi2 preserves a metallic-type conductivity down to 2.0 K. Moreover it was found that delta-type structure with atomic sheet of NiSi2 silicide embedded into a crystalline Si matrix can be fabricated using room-temperature overgrowth of a Si film onto the Tl stabilized NiSi2 surface layer. Confinement of the NiSi2 layer to a single atomic plane has been directly confirmed by high-resolution transmission electron microscopy
