115 research outputs found
DeepSlides dataset
No full text<p>DeepSlides dataset.</p>
<p>please cite:</p>
<pre>@article{senaras2018deepfocus,
title={DeepFocus: detection of out-of-focus regions in whole slide digital images using deep learning},
author={Senaras, Caglar and Niazi, M Khalid Khan and Lozanski, Gerard and Gurcan, Metin N},
journal={PloS one},
volume={13},
number={10},
pages={e0205387},
year={2018},
publisher={Public Library of Science San Francisco, CA USA}
}</pre>
Electrical and photovoltaic properties of heterojunction diode based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
No full textn-Si/p-PEDOT-PSS heterojunction diode was fabricated by deposition of poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto n-type Si wafer using spin coating. Its electrical properties of the diode were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The field emission scanning electron microscopy (FE-SEM) was used to determine the surface quality. SEM result indicates that the surface morphology of the PEDOT-PSS film spin coated on n-Si substrate is almost homogeneous. Diode parameters such as the ideality factor, barrier height and series resistance were calculated using Cheung’s method and C-V measurements. I-V characteristics under dark and illumination conditions were performed to characterize the photovoltaic behavior of the diode
Preparation, structural and morphological properties of nanostructure ZnO films by sol gel spin coating
No full textPreparation, Structural and Morphological Properties of Nanostructure ZnO Films by Sol Gel Spin Coating
No full text10th International Vacuum Electron Sources Conference (IVESC) -- JUN 30-JUL 04, 2014 -- Saint Petersburg, RUSSIAWOS: 000366469900032In preset study, the sol-gel method was used to deposit ZnO films and silicon substrates were used as substrate. The effects of deposition temperature on the structural and morphological properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the ZnO films were crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. The current-voltage (I-V) characteristics of the diode were performed using a KEITHLEY 2400 sourcemeter. The pn heterojunction diode was fabricated and the diode parameters were determined from the analysis of the measured dark current-voltage curves. Rectifying behavior was observed from the I-V characteristics of these heterojunction diodes.IEE
Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions
No full textZinc oxide (ZnO) is widely used in solar cells, gas sensors, photodetectors due to its unique properties, inexpensive, high transmittance and wide optical band gap. These properties make it good candidate as host materials for the UV-vis emission of various rare earth (RE) elements. So, RE elements doped ZnO films have been increasingly taking an important role in optoelectronics and photonics. In this study, La doped ZnO (ZnO:La) films were prepared by the low-cost sol gel method using the spin coating technique. The crystalline structure and surface morphology of the films were analyzed by using an X-ray diffractometer and a field emission model scanning electron microscopy, respectively. The p-Si/n-ZnO: La heterojunction structures were fabricated. In order to characterize the electrical behavior of thesestructures, the current-voltage (I-V) characteristics were performed. It was observed that all of them showedgood rectifying behavior.The diode parameters were determined by using different methods
Architectural design of new conjugated systems carrying donor-pi-acceptor groups (carbazole-CF3): Characterizations, optical, photophysical properties and DSSC's applications
No full textIn this study, two new organic dyes containing substituted N-octyl carbazole as electron donor and - CF3 units as electron acceptor group were designed and synthesized for ZnO-based dye sensitized solar cells (DSSCs). The synthesized carbazole derivatized compounds 3,6-bis(3,5-bis(trifluoromethyl)phenyl)9-octyl-9H-carbazole (IVa) and 3,6-bis(4-(trifluoromethyl)phenyl)-9-octyl-9H-carbazole (IVb) were characterized by FT-IR, H-1 NMR, C-13 NMR, HMBC and CHN analyses. The spectroscopic (UV-Vis and FL) and thermal properties (TGA-DTA) of these compounds were also investigated. The produced (IVa and IVb) ZnO films were used as photoanodes in all DSSCs. Microwave-assisted hydrothermal method was used to synthesize ZnO nanopowders with different morphologies which are used as photoanodes in DSSCs. The structural and morphological properties of ZnO nanopowders were investigated using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). ZnO-DSSCs were produced through coating ZnO nanopowders on transparent conductive fluorine-doped tin oxide (FTO) coated glass substrate using the Doctor Blade method. Current-voltage measurements of all produced DSSCs were carried out under a solar simulator with AM 1.5 G filter having an irradiance of 100 mW/cm(2). Solar cell performances of all DSSCs such as; open-circuit voltage (V-oc), short circuit current (J(sc)), fill factor (FF) and power conversion efficiency (PCE) were analyzed. (C) 2021 Elsevier B.V. All rights reserved
Highly selective colorimetric onsite sensor for Co(2+)ion detection by povidone capped silver nanoparticles
No full textHighly efficient colorimetric povidone (PVP) mediated Ag nanosensing strategy has been adopted for the sensitive and selective quantification of cobalt ion in aqueous system. PVP functionalized Ag nanoparticles grown by chemo-reductive methodology at ambient conditions. These efficient nanoparticles were confirmed by UV-Vis (UV-Vis) spectroscopic characteristic absorption peak at 390 nm and strong Fourier Transform Infrared (FT-IR) stretching bend at 455 cm-1. The topographical and crystalinity analysis by Field Emission Scanning Electron Microscope (FESEM) and X-ray diffractometer (XRD) analysis reveals that the obtained PVP@Ag NPs have rough surface and size in range of 30-45 nm respectively. Later PVP@Ag NPs were employed to develop a highly selective and sensitive colorimetric nanosensor for Co2+ detection in the concentration from 0.1 to 5 mu M in aqueous environment
Improved mobility of the copper phthalocyanine thin-film transistor
No full textWOS: 000280381600025Copper phthalocyanine (CuPc) organic thin-film transistor (OTFT) was fabricated by thermal evaporation deposition on p-SiO2 dielectric layer. Organic thin-film transistors used in large display areas need the enhancement of transistor performances by increasing the I-on/I-off ratio and the mobility. The output and transfer characteristics of CuPc-OTFF having source/drain interdigitated-finger geometry were investigated. The mobility, I-on/I-off ratio and inverse sub-threshold slope for the CuPc-OTFT were found to be 5.32 x 10(-3) cm(2) V-1 s(-1), 1.94 x 10(4) and 2.5 V/decade, respectively. The interface state density of the transistor was found to be 3.73 x 10(11) eV(-1) cm(-2) using the conductance-frequency method. The CuPc film indicated a homogeneous surface having 3.878 nm small roughness values as observed by atomic force microscope (AFM) measurements. The obtained results indicate that we have improved a CuPc-OTFT transistor with high mobility without being of any substrate treatmentFeyzi AKKAYA Scientific Activates Supporting Fund (FABED); National Boron Research Institute (BOREN) [BOREN-2009.C0226]; Anadolu University Commission of Scientific Research [204, 061039]This work was supported by Feyzi AKKAYA Scientific Activates Supporting Fund (FABED). One of author wishes to thank FABED for young scientist grant. Also, this work was partially supported by the National Boron Research Institute (BOREN) (Project Number: BOREN-2009.C0226) and Anadolu University Commission of Scientific Research Projects 204 under grant no. 061039. Authors wish to thank BOREN and Anadolu 205 University
Synthesis and electrochemical polymerization of a novel 2-(thiophen-2-yl)-4-(thiophen-2-ylmethylene)oxazol-5(4H)-one monomer for supercapacitor applications
No full textWOS: 000370884800006In this study, the organic synthesis, electrochemical polymerization and electrochemical characterization of a novel 2-(thiophen-2-yl)-4-(thiophen-2-ylmethylene)oxazol-5(4H)-one, 3, monomer have been reported for supercapacitor applications. Electrode active material was formed electrochemically coating of poly(2(thiophen-2-yl)-4-(thiophen-2-ylmethylene)oxazol-5(4H)-one) (PTTMO) on pencil graphite electrode (PGE). Electrochemical polymerization was carried out by chronoamperometric (CA) technique in an acetonitrile (ACN) solution containing 0.01 M monomer and 0.10 M tetrabuthylammonium perchlorate (TBAP). The prepared PGE/PTTMO electrode has been monitored by scanning electron microscopy (SEM). Electrochemical properties of the electrode have been investigated by CV, electrochemical impedance spectroscopy (EIS), galvanostatic charge-discharge and repeating chronopotentiometry (RCP) techniques with two or three electrode systems. PGE/PTTMO has exhibited a capacitive performance with highest specific capacitances of 193.00 F g(-1) at a scan rate of 10 mV s(-1). On the other hand, the electrode has shown good charge-discharge cycling stability with the retained ratio about 90.83%Eskisehir Osmangazi University Research Found [2014-418]This work was supported by Eskisehir Osmangazi University Research Found (Project No: 2014-418). The authors would like to thank Dr. Mujdat Caglar and Seval Aksoy for SEM. The authors would also like to thank AUBIBAM for the NMR analysis
Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor
No full textWOS: 000413380800007In this study, bottom-gate top-contact pentacene-based organic field effect transistors (OFET) with various spin coated ultrathin organic dielectrics on anodized aluminum oxide (Al2O3) bilayer gate dielectrics were fabricated. We have investigated the influence of the bilayer gate insulator having different combinations on the OFETs performance. Polystyrene (PS), poly-4-methylstyrene (P4MS), Poly-4-vinylphenol (PVP), poly-methylmethacrylate (PMMA) and Poly(4-vinylphenol-co-methyl methacrylate) (PVP_co_PMMA) were used as an organic dielectric. The results indicate that Al2O3 gate dielectric with Poly (4-vinylphenol) shows the optimum electrical performance with carrier mobility as large as 0.65 cm(2)/Vs, on/off current ratio of 10(6), and threshold voltage as -3.8 V
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