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    IMAGING OF FREE CARRIERS IN SEMICONDUCTORS VIA OPTICAL FEEDBACK IN THZ QUANTUM CASCADE LASERS

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    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (ffi40 mW/cm2) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations

    THz imaging of free carrier density based on quantum cascade lasers under optical feedback

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    We demonstrate a detectorless THz imaging based on quantum cascade lasers operating under optical feedback to monitor the spatial distribution of free electron plasma induced onto a semiconductor by photo-excitation with a reconfigurable pattern of NIR laser pump

    Simultaneous measurement of multiple target displacements by self-mixing interferometry in a single laser diode

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    We demonstrate that a single all-optical sensor based on laser diode self-mixing interferometry can monitor the independent displacement of individual portions of a surface. The experimental evidence was achieved using a metallic sample in a translatory motion while partly ablated by a ps-pulsed fiber laser. A model based on the Lang-Kobayashi approach gives an excellent explanation of the experimental results
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