1,721,070 research outputs found
Gallium nitride epitaxy on large area silicon substrates for power and optoelectronic applications
No full textLocalization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements
No full textAlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
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Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
No full textElectroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
No full textIV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors
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