1,721,249 research outputs found
Computational methods for nanoelectronics
We discuss a few aspects of nanoelectronic device simulation, focusing
on numerical approaches for the proper treatment of the boundary
conditions at the exposed surface of gallium arsenide and on the techniques
for the solution of the Schroedinger equation in open structures threaded
by a strong magnetic field
Shot Noise and “Universal” suppression factors
We present a review on some aspects of shot noise research, mainly focusing on our own work in the field, and on some conclusions that we can draw looking at the results obtained in the last few years. The activity on shot noise of one of us (M. M.) started during the preparation of his thesis, in 1986-1987, of which Lino was one of the advisors. That was the first exposure to the numerical simulation of noise phenomena, to shot noise, and to the effect on shot noise of the nanoscale size of devices. It was also an opportunity to realize how the application of numerical simulations could help gaining a better understanding of noise phenomena and, in particular, how it could help in the estimation of the limits of applicability of analytical models. This last issue will be the focal point of this paper, where we will try to summarize the results the we have obtained on the extent to which realistic devices and nanostructures can exhibit the shot noise suppression factors predicted on the basis of analytical models
Measurement of RF Emissions from Electrostatic Discharges between Charged Insulators
This paper focuses on the measurement of the
electromagnetic radiation from electrostatic discharges between
charged insulators that are electrostatically coupled to conductors.
To observe this phenomenon in a controlled environment, various
basic experimental setups were assembled in a semianechoic
chamber, consisting of a metal antenna, a table tennis ball, and a
dielectric plane positioned on a ground plane. We provide a phenomenological
discussion and present the obtained results. Finally,
we propose an equivalent circuit that is capable of representing
the investigated phenomenon, and we report results of further test
setups that aim at confirming some of our conjectures
Differential capacitance between circular stacked quantum dots
We have investigated the differential capacitance between two stacked, circular quantum dots. An expression defining such differential capacitance has been derived on the basis of that for the self-capacitance of a single quantum dot. By means of a self-consistent simulation we have obtained numerical results showing that the differential capacitance between the two dots is strongly influenced by shell-filling effects, and that the classical limit of the parallel-plate capacitor is retrieved when the two dots are in close proximity. Our results represent a contribution to the effort for the definition of a capacitance matrix for a complex system of quantum dots. (C) 1997 Elsevier Science B.V. All rights reserved
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