1,720,990 research outputs found
Numerical simulation of the coupling between vortex shedding and acoustic field in a solid propellant engine
No full textCompact Modeling of Thermal Resistance in Bipolar Transistors on Bulk and SOI substrates
No full textAnalytical expressions for the thermal resistance of bipolar transistors on bulk and SOI substrates are presented. The models are derived on the basis of intuitive physical pictures and validated by comparison with experimental data and three-dimensional (3D) device simulation. The effect of bulk and SOI substrates, shallow- and deep-trench isolation, and multiple emitter fingers is accounted for. All models are suitable for both hand calculations and computer-aided design
An optical fiber based flow transducer for infant ventilation: measurement principle and calibration
No full text
The improvement of cognitive functions is associated with a decrease of plasma Osteopontin levels in Natalizumab treated relapsing multiple sclerosis.
No full textA Drift-Diffusion/Monte Carlo Simulation Methodology for SiGe HBT Design
No full textAn accurate and efficient simulation methodology for Si(1-x)Ge(x) HBTs is presented. A two-dimensional (2-D) drift-diffusion solver is employed for dc and ac characteristics, and one-dimensional (1-D) full-band Monte Carlo for transport in the base-collector high-electric-field region. Extrinsic parasitics are introduced as lumped circuit elements whose values are obtained from measurements and layout considerations. This approach not only reduces the computational cost of the simulation, but it also helps to differentiate the relevance of the intrinsic and extrinsic device parameters. We discuss the calibration of the simulation on a 0.25 mum process and use a 1-D regional analysis in the quasi-static approximation to identify the major source of delay. Results of the delay analysis were used to improve device performance for the 0.16 mum technology node
Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application
No full textUltra Thin Single and Double-Gate MOSFETs for Future ULSI Applications: Measurements, Simulations and Open Issues
No full textMonte Carlo Simulation of Impact Ionization in SiGe HBTs
No full textMeasurements and Monte Carlo simulations of impact ionization in the base-collector region of SiGe HBTs are presented. A device with low germanium concentration (graded from 0 to 12%) is considered and no differences are found between the experimental multiplication factor in that device and the corresponding silicon control. Because impact ionization (II) occurs inside the bulk-Si collector, phonon and II scattering rates for bulk silicon can be used in the Monte Carlo simulation, avoiding the need to model the strained SiGe layers. Full-Band Monte Carlo simulations are shown to reproduce the multiplication factors measured in SiGe devices featuring different collector profiles
- …
