1,721,107 research outputs found
Design Criteria of LDD MOSFET Devices
No full textIn this paper we present the design criteria of Lightly Doped Drain (LDD) MOSFETs through the study of the influence of the n- doping of drain/source on the electric field, but taking into account also the impact of LDD on series resistance of the device and the channel length contribution on breakdown voltage reduction
Una introduzione alla tecnologia RFID
No full textIn questo articolo, dopo una descrizione del principio di funzionamento e della struttura base della tecnologia RFID, vengono esaminate alcune tra le principali applicazioni di tale tecnologia, con riferimento alle attuali ricerche riguardanti ulteriori realizzazioni ed ai problemi ad esse connessi.In this paper, after a description of the operating principle and basic structure of RFID technology, we present some of the main applications of this technology, with reference to the current research regarding further applications and problems related to the
A Procedure to Determine the Intrinsic Model of CNTFETs for RF Applications
No full textThe aim of this paper is to present a procedure to determine the intrinsic model of Carbon NanoTube Field Effect Transistors (CNTFETs) for RF applications. In particular an active model, deduced from S parameters measurements, already proposed by us, is examined. Moreover, through a de-embedding procedure, which allows to remove random errors in measured S parameters of small-signal device, we evaluate the intrinsic model of CNTFETs to implement directly in simulation software
CNTFET electronics : design principles
No full textCarbon NanoTubes (CNTs) are one of the most promising materials for future electronics. Among their possible applications, CNTFETs (Carbon NanoTube Field-Effect Transistors) are the most interesting since they are expected to sustain the transistor scalability, increasing performances of classical silicon-based devices as well.
This book collects five chapters and is dedicated to the study of the design principles of analogue and digital circuits with CNTFETs, showing innovative aspects and highlighting the most original research results carried out by us in the recent years and developed at Electronic Devices Laboratory of Polytechnic University of Bari, Italy.
In particular, in the first chapter, we will present a detailed study of Carbon NanoTubes (CNTs), introducing their physical characteristics which give them unique properties and enhanced versatility.
The second chapter will be focused on an exhaustive description of the basic types of CNTFETs, analyzing for each one the principle of operation.
In the third chapter we will examine the modelling issue, with particular reference to conventional CNTFETs, reviewing a compact, semi-empirical model of CNTFETs, already proposed by us. Here we will introduce new solutions to allow an easy implementation in the most common circuit simulators, such as SPICE and Verilog-A.
The study of design principles of typical analogue circuits and logic blocks with CNTFETs will be described in the fourth chapter. We will discuss the simulation results obtained implementing the CNTFET model both in Verilog-A and in SPICE. A particular attention will be paid to the study of CNTFETs as memory devices through the design of a 16 bit SRAM.
In the last chapter we will carry out static and dynamic analysis of basic digital circuits, verifying the results by means of a comparison with those obtained by Prof. Wong at Stanford University.
We do believe that this book can be useful to graduate students and industrial researchers who are interested in learning about the recent progress and future challenges of this new and exciting research field
A Simulation Study of Analogue and Logic Circuits with CNTFETs
No full textIn this paper we have implemented the semi-empirical compact model for CNTFETs already proposed by us to simulate typical analogue circuits and logic blocks both in SPICE, using ABM library, and in Verilog-A. The obtained results have been the same in static simulations and comparable in dynamic simulations. However using Verilog-A the simulation run time has been much shorter and the software has been much more concise and clear than schemes using ABM blocks in SPICE
A De-Embedding Procedure to Determine the Equivalent Circuit Parameters of RF CNTFETs
No full textIn this paper we present a de-embedding procedure in order to determine the equivalent circuit parameters of CNTFETs for RF applications. This proposed technique allows to remove random errors in measured S parameters of small-signal device: in this way the intrinsic model of CNTFETs can be implement directly in simulation software
A Comparison of CNTFET Models through the Design of a SRAM Cell
No full textIn this paper we present a comparison of CNTFET models through the design of a SRAM cell, in order to identify the one more easily implementable in simulation software. In particular we consider two models, the first, already proposed by us, and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET). The simulation results of the design of a SRAM cell structure in CNTFET technology, by using the two models, are shown highlighting the comparison in terms of performance, power dissipation and stability
A Simulation Study of Basic Digital Circuits using Molecular Diodes
No full textIn this paper we illustrate a new kind of devices (molecular devices), able to work better at nanometer scale, with particular attention to molecular diodes. In particular we simulate the I-V characteristics of a gated molecular diode, showing how an increase of the gate voltage involves an increase of the drain current:
Then we propose a simulation study, obtained by SPICE simulator, in order to analyze and design some basic digital circuits (AND &OR) employing molecular diodes.
In the light of obtained results, we demonstrate that molecular diodes as logic ports cannot be used because, although they follow input pulses, the logic levels in output and the noise margin obtained are not appropriate for electronic applications
Principali applicazioni sensoristiche dei Nanotubi di Carbonio
No full textIn questo articolo, dopo una breve descrizione delle proprietà elettroniche dei NanoTubi di Carbonio (CNT), legate alla possibilità di esibire un comportamento metallico o semiconduttivo in relazione alla loro geometria, vengono esaminate alcune tra le principali applicazioni dei CNTs nel campo della sensoristica.In this paper, after a brief review of electronic properties of Carbon NanoTubes (CNTs), we present some of the main applications of CNTs in the sensor fiel
Performance Evaluation of CNTFET-based Digital Circuits: A Review
No full textIn this paper we review a procedure in order to carry out static and dynamic analysis of basic digital circuits. At first, for static analysis, we implement a simple DC model for CNTFETs already proposed by us, verifying the validity of the obtained results through a comparison with those of Wong model. Then, to carry out the dynamic analysis, we consider both the quantum capacitance effects and the sub-threshold current. At last we analyze the timing performances of a NOT gate in order to define the optimal working conditions, emphasizing that the proposed method can be used to analyze the timing performance of any CNTFET-based logic gate
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