1,720,985 research outputs found
Technical report ITC-irst/SGS-Thomsn
No full textQuesta relazione rappresenta l’atto conclusivo del contratto di ricerca tra SGS-Thomson e CMBM/ITC per l’anno 1997/98. Il contratto ha previsto l’applicazione di tecniche analitiche di spettrometria di massa e spettroscopia elettronica al fine di studiare e sviluppare nuove tecnologie e processi per la microelettronica ULSI nell’ambito del progetto europeo EUREKA EU127/Jessi T1
A comparison between mass spectrometry techniques on oxynitrides
No full textThe development of materials and processing in microelectronics needs an increasing parallel improvement of the analytical methodologies, required to geve up-to-date answers to the state of the art in this field. Oxynitride is a typical example. This material has replaced thermal silicon oxide as gate insulator due to the properties of good masking against impurity diffusion, together with the excellent dielectric strenght and the better resistance to dielectric breakdown. These properties allow the manufactoring of gate oxide with a thickness below 80 Å. In this work we present the application of analytical methodologies based on mass spectrometry on oxynitrides. In order to develope a complete analytical methodology, the influence of impact energy and incidence angle on the profile quantification in SIMS analyses has been investigated. Also a comparison between ToF-SIMS and SIMS analyses has been performed, to evaluate the applicability of ToF-SIMS depth profiling to this topi
ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface Techniques
No full textThe progressive microelectronics ULSI device shrinking towards improving the performances has driven the development of new materials and process technologies. A goood example is given by oxynitride, an innovative material which is thought for the next generation of 0.25 mm MOS circuits. Oxynitrides have replaced thermal silicon oxides as gate insulator due to the properties of gook masking against impurity diffusione, together with the excellen dielectric strenght and the better resistance to dielectric breakdown. The strong request from microelectronics industries for a complete and accurate characterization of this new material and the technological processes concerned, has considerably stimulated the research, particularly in the field of analytical methodology. Secondary Ion Mass Spectrometry, linked since the beginning with microelectronics development, shows again to be the most reliable and suitable microanalytical technique to geve answers to this topics. In this work we present some examples of methodologies applied to an accurate quantitative characterization of this new material, together with its impact on the production processes. We show how the complementary employing of several mass spectrometry techniques, such as magnetic sector SIMS, SNMS, SNMS and ToF-SIMS, can give a more complete overview both to process issues and to methodological developments of the techniques themselve
Furnace and RTP Nitridation of Ultrathin Oxide Films by NO and N2O: SIMS and ToF-SIMS Characterisation
No full textOxidation of PIII (Plasma Immersion Ion Implanted)-doped Silicon: study of Arsenic redistribution by SIMS and XPS
No full textCaratterizzazione SIMS ToF-SIMS e XPS di Ossidonitruri
No full textL’obiettivo del presente lavoro è stato la caratterizzazione di ossidi sottili nitrurati tramite tecniche di microanalisi differenti e complementari. Lo sviluppo della tematica si è svolto attraverso tre linee guida la cui identificazione permette di esporre al meglio il lavoro svolto e definire in modo completo i risultati raggiunti: - Sviluppo di una metodologia necessaria a caratterizzare in modo completo ed accurato questa tipologia di campioni. - Caratterizzazione chimico-fisica di ossidonitruri al fine di definirne le proprietà fondamentali quali distribuzione dell’azoto, auqntificazione del contenuto di azoto, legami chimici. - Applicazione della metodologia sviluppata a campioni di produzione e impiego dei risultati ottenuti per monitorare ed aiutare a risolvere le problematiche di process
Characterisation of RTA Oxynitrides by SIMS and XPS Analyses
No full textAim of this work is the characterization of oxynitride films grown by Rapid Thermal Processing (RTP) using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7nm. Secondary Ions Mass Spectrometry (SIMS) and X-rays Photoemission Spectroscopy (XPS) have been employed to obtain a complete chemical characterization. XPS analyses have been performed at different depths after removal of oxynitride layers by chemica etching. SIMS and XPS analyses have been also performed on the same samples after a reoxidation treatment. Depending on the precursors used, the oxynitrides show different characteristic
Deph profiling and quantification of chlorine and nitrogen in oxynitrides obtained by HTO process
No full textSample holder implement for very small samples on SC-Ultra SIMS instrument
No full textFor the most part of SIMS analyses the available samples are wide enough to be cut down to the sample holder dimensions; nevertheless in some special case one has to face very small specimens (even 1x1mm2), because of the high cost of material or simply because of their low availability. Typical examples can be SiC specimens or decapsulate Si devices. The edge of a typical sample holder window compared to the flat sample surface appears like a macroscopic step, where the electric field is distorted and the primary/secondary beams alignment is consequently affected. This edge effect becomes critical if the sample dimensions are comparable to the edge thickness. For SIMS analyses it is of prime importance to have a flat surface in the sputtering area and in the surrounding surface too, therefore we made a special sample holder for very small specimens in order to fulfill these conditions. A new mask has been designed and realized to easily put in it the smallest pieces; precision of the modified sample holder has been tested obtaining suitable result
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