117 research outputs found
Monte Carlo simulation of implant free InGaAs MOSFET
No full textThe performance potential of n-type implant free In0.25Ga0.75As MOSFETs with high-κ dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in the both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept
Morphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state
No full textMorphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state
No full textSpace charge effects in photoemission with a low repetition, high intensity femtosecond laser source
No full textSub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs
No full textThe performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage from 0.26 V to 0.08 V as the gate dimension is reduced from 1 μm to 300 nm. An increase in transconductance is also observed with reduced gate dimension. Maximum drain current of 420 μA/μm and extrinsic transconductance of 400 µS/µm are obtained from these devices. Gate leakage current of less than 100pA and subthreshold slope of 90 mV/decade were obtained for all gate lengths. These are believed to be the highest performance submicron enhancement mode III-V MOSFETs reported to date
1 μm gate length, In<sub>0.75</sub>Ga<sub>0.25</sub>As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm
No full textThe first demonstration of implant-free, flatband-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As
channel n-MOSFETs is reported. These 1 μm gate length
MOSFETs, fabricated on a structure with average mobility of
7720 cm<sup>2</sup>/Vs and sheet carrier concentration of 3.3×10<sup>12</sup> cm<sup>-22</sup>,
utilise a Pt gate, a high-k dielectric (k≈20), and a δ-doped
InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical
maximum drive current (I<sub>d,sat</sub>) of 933 μA/μm, extrinsic transconductance
(g<sub>m</sub>) of 737 μS/μm, gate leakage (I<sub>g</sub>) of 40 pA, and on-resistance
(R<sub>on</sub>) of 555 Ωμm. The g<sub>m</sub> and R<sub>on</sub> figures of merit are the
best reported to date for any III-V MOSFET
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm
No full textAbstract:
Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions
Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm
No full textWe present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs hetero-structure. Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, Ig = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, Ron = 1920 Omega-mum; Ion/Ioff ratio = 6.3 x 104; and output conductance, gd = 11 mS/mm. A peak electron mobility of 5230 cm2/V. s was extracted from low-drain-bias measurements of 20 mum long-channel devices, which, to the authors' best knowledge, is the highest mobility extracted from any e-mode MOSFET. These transport and device data are highly encouraging for future high-performance n-channel complementary metal-oxide-semiconductor solutions based on III-V MOSFETs
High mobility III-V MOSFETs for RF and digital applications
No full textDevelopments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications
Roboter für die Probenvorbereitung: Laboratory Robotics: A Guide to Planning, Programming, and Applications. Von W. J. Hurst und J. W. Mortimer, VCH Verlagsgesellschaft, Weinheim 1987. 129 S., Abb., geb. DM 68-, ISBN 3-527-26675-5
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