236 research outputs found
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
No full textWe present a theoretical method to simulate magnetotransport in silicon nanowire (Si-NW) MOSFET including the effect of Surface Roughness (SR). We use a full three dimensional (3D) real-space self-consistent Poisson-Schrodinger solver based on Non Equilibrium Green's function Formalism (NEGF) which can treat the influence of an external magnetic field on the device. By comparing magnetoconductance curves with the classical Drude formula we extract magnetoresistance (MR) mobility for nanowires with and without roughness. From the preliminary results it seems that the MR mobility is not dramatically reduced for the SR parameters considered in this work
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
No full textWe review recent results on the effect of surface roughness on the transport properties of ultra-short devices like Silicon nanowire and double-gate FETs. We use a full quantum treatment within the non equilibrium Green's function (NEGF) formalism which allows us to take into account quantum confinement, quantum phase interference, out-of-equilibrium, and quasi-ballistic transport and focus on transfer characteristics and low-field mobility
Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology
No full text
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain
No full textFull-band Monte-Carlo simulations of short channel double-gate SOI nMOSFETs were used to assess possible enhancement of drain
current in devices featuring a conduction band offset between the source and the channel as those obtained using non-conventional
source/drain materials. We found that the coupling between carrier transport and device electrostatics tends to balance the enhancement
of charge injection provided by the band discontinuity, so that the largest contribution to the current enhancement given by alternative
S/D materials is due to the strain that they induce in the channel
Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy
No full textTemperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases
No full textPhysical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
No full textUsing the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non-negligible base broadening
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