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Low-Power Pulsed- Laser Annealing of implanted GaAs
No full textLow-power annealing by a pulsed laser is used to recover the structure of low-dose implanted (100) GaAs crystals. Reflection high-energy electron diffraction with variable glancing incidence is employed to detect the structural changes at different depths in the specimens. The depth dependence of the damage is studied in more detail by Rutherford backscattering analysis. The annealing results depend on the irradiation conditions. A laser energy window below the melting threshold is found within which the structure can be restored to about as high degree of crystallinity as the virgin one, without any visible surface damage. A simple theoretical estimate shows that the temperature rise of the material is far below the melting threshold. This rise is too short in time to cause substantial dopant diffusion; however, it can enhance well the point-defect mobility
Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn implanted InP
No full textThe e!ects of N2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP
matrix are discussed. The analyses were performed, by using several complementary techniques such as RBS,
Raman spectroscopy, SIMS and electrical measurements. It has been demonstrated that in suitable annealing
conditions, namely nitrogen ambient, it is possible to achieve a complete reordering of the damaged
structure and a very high electrical carrier activation (&80%). In this paper, the contribution of the nitrogen
atoms to the mechanism a!ecting the electrical characteristic of the implanted and laser annealed samples is
discussed
RHEED AND RBS ANALYSIS OF LOW-POWER LASER ANNEALED GAAS
No full textGaAs crystals were implanted with 140 keV Zn ions at random incidence and a dose of 10(14) cm-2. Annealing by a low-power pulsed laser was used to recover the radiation damage. The samples were analysed by RHEED and RBS techniques. The effect of the annealing on the recovery of structure defects in GaAs is reported
In-depth characterization of electrical carrier activation in Zn+ implanted and laser annealed InP
No full textLow-power pulsed-laser annealing has been applied to Zn1-implanted InP samples in N2 atmosphere, attaining structural
reordering and high electrical activation. The in-depth hole carrier concentration distribution has been compared with the indepth
implanted Zn distribution: a [Zn] plateau appears where the activation is about 100%
High-resolution electron microscopy of radiation damage in implanted and laser treated GaAs
No full textSingle crystals of semi-insulating (100) GaAs implanted with 140 keV Zn+ at elevated temperature (110+/-10 degrees C) to a dose of 10(14)/cm(2) were treated with low power laser pulses of 4.5 MW/cm(2). Irradiation induced defect structures in as-implanted GaAs and the degree of restoration after their low power pulsed laser annealing (LPPLA) were investigated by high resolution transmission electron microscopy (HRTEM) of cross-sectional and planar specimens. Digital filtering (by Bragg filters) was applied to experimental HRTEM images to extract additional information about the details in the structure of radiation-induced defect cluster zones
Precipitation of superstructured nano-crystals in high-dose implanted Si: an XHRTEM study
No full textNano-sized precipitation in high-dose implanted Si has been investigated using high-resolution transmission electron microscopy of cross-sectional specimens (XHRTEM). Zn and Bi (50 keV) have been implanted in Si at doses of 5 x 10(16) cm(-2) and 10(16) cm(-2), respectively. In spite of the different diffusivities of these species in Si, their low solubility resulted in precipitation of nano-sized metallic inclusions whose inner structures revealed a synthesis of superlattices, composed of the host Si matrix and the implanted species
High Voltage Transmission Electron Microscopy of Low-Power Pulsed Laser Annealing of Zn-implanted GaAs
No full textCrystals of (100) GaAs implanted with Zn+-ions were treated by low-power pulsed-laser annealing (LPPLA) technique. The first investigations about the effect of this treatment on the damage structure distribution in the GaAs by means of high voltage transmission electron microscopy are shown. Typical rearrangement and accumulation trends of the initially uniformly dispersed damage clusters were established after the LPPLA. The morphology of gallium oxide films grown on the surface of GaAs during LPPLA treatment and their specific behavior under electron bombardment during the observation in the microscope are reported too
High resolution Electron Microscopy of Zn and Bi related superlattices ion ion implanted (100) Si
No full textNanosized precipitation in High dose Zn+ and Bi+ implanted Si is investigated by High Resolution Transmission Electron Microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results in the precipitation of nanosized metallic inclusions revealed as superlattices composed of the host Si matrix and the implanted species
About some peculiarities in defect appearence in elemental and III-V compound semiconducting materials
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