68 research outputs found

    Intimate partner violence: Attitudes in a sample of Italian students

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    Domestic violence (DV) and intimate partner violence (IPV) represent a widespread phenomenon. Several studies that focus on students and their attitudes toward DV and IPV indicate that changes in attitudes may depend on gender. The purpose of this study was to explore the perception of violence against women among 4,200 undergraduate Italian students and how these perceptions are associated with gender. Students were recruited as volunteers to fill out a questionnaire specifically developed to evaluate their attitudes regarding IPV. Relations were explored by cross-tabulation analysis with the Chi-square test and post hoc evaluation of adjusted standardized residuals. The students appeared to be sensitive to relevant topics regarding violence, but they demonstrated a lack of confidence in legal institutions. Looking at gender differences, the male students tended to justify a perpetrator’s actions more than the females. This could be explained as a more distant view of the phenomenon for male students compared to females, probably due to cultural differences

    Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution

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    Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 for 200- pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained with machine learning algorithms

    First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

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    Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3×\times4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of \sim~5.5~\mum

    TCAD investigation of Compensated LGAD Sensors for extreme fluence

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    A new gain layer design, whose effective doping profile results from the difference between two overlapping implants of opposite dopant species (e.g. boron and phosphorus), is conceived to extend the operational life of Low-Gain Avalanche Diodes (LGADs) to fluences significantly above the present limit of 2.5⋅10^15 1MeV n_eq/cm^2. Both acceptor and donor atoms will experience doping removal due to irradiation, but their difference will remain fairly constant. The implementation of this ambitious goal necessitates a meticulous process of optimizing the two implants that constitute the gain layer of the Compensated LGADs. To this end, the Synopsys® Sentaurus TCAD toolkit, with the most up-to-date release of the Perugia radiation damage model, was employed, enabling a comprehensive investigation of these new sensors. This level of scrutiny is crucial for understanding the behaviour of the first Compensated LGAD production (2022 by FBK) and designing the subsequent batches of Compensated LGADs

    Design and optimisation of radiation resistant AC- and DC-coupled resistive LGADs

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    Future high-energy physics experiments require a paradigm shift in radiation detector design. In response to this challenge, resistive LGADs that combine Low Gain Avalanche Diode technology with resistive readout have been developed. The prototypes created so far, employing AC-coupled contacts, have demonstrated impressive performance, achieving a temporal resolution of 38 ps and a spatial resolution of 15 μm with a pixel pitch of 450 μm. To tackle some of the issues encountered up to this point, particularly the non-uniform response across the entire surface of the detector, a new version with DC-coupled contacts has recently been developed. The Synopsys® Sentaurus TCAD simulations that have guided the design of their first production, released by the Fondazione Bruno Kessler in November 2024, will be presented below along with a concise summary of the history of the prototypes with AC-coupled contacts

    Characterization of thin carbonated LGADs after irradiation up to 2.5· 1015 n1 Mev eq./cm2

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    EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m. To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 1015 n1 Mev eq./cm2. The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β-source tests. This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date

    Characterisation of the FBK EXFLU1 thin sensors with gain in a high fluence environment

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    The EXFLU1 batch of LGAD sensors on substrates of thickness between 15 and 45μm were exposed to various radiation grades between 1 × 1014 and 5 × 1015 neqcm−2 using the TRIGA Mark II research nuclear reactor at the Jozef Stefan Institute. The sensor designs are optimised to preserve characteristics at high fluences. These sensors are manufactured by Fondazione Bruno Kessler. The latest studies of the effects of radiation have been performed, with particular focus on acceptor removal and gain evolution
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