1,720,969 research outputs found
High performance germanium-on-silicon detectors for optical communications
No full textWe demonstrate fast and efficient germanium-on-silicon p-i-n photodetectors for optical communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 mum, respectively, time response 2.5 Gb/s integrated receivers for the second and third fiber spectral windows. (C) 2002 American Institute of Physics
Germanium on silicon pin photodiodes for the near infrared
No full textNovel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps
Measurement of the near infrared absorption of Ge on Si films by differential spectroscopy
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Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics
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Ge on Si p-i-n photodiodes operating at 10 Gbit/s
No full textWe report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics
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