3,189 research outputs found
A new kind of double phase elliptic inclusions with logarithmic perturbation terms I: Existence and extremality results
No full textThis paper is devoted to introduce a new double phase elliptic inclusion problem (DPEI) involving nonlinear and nonhomogeneous partial differential operator which has unbalanced growth and logarithmic perturbation terms, and two multivalued functions which are defined in the domain and its boundary. The main goal of this paper is to establish the existence and extremality results to the elliptic inclusion problem under consideration. More exactly, we give the definitions of weak solutions, subsolutions and supersolutions to (DPEI). Then, under the coercive setting, an existence theorem of weak solutions to (DPEI) is obtained by employing a surjectivity theorem for pseudomonotone operators. Moreover, in the noncoercive framework, we apply the method of sub-supersolution combined with the nonsmooth calculus analysis and truncation techniques to prove that (DPEI) has at least a weak solution within an ordered interval of sub-supersolution. Finally, when the constraint set K satisfies a lattice condition, the existence of smallest and greatest elements of solution set to (DPEI) is established
An analysis of small-signal substrate resistance effect in deep-submicrometer RF MOSFETs
No full text[[abstract]]Two different explanations of the S-22 kink phenomenon in deep-submicrometer RF MOSFETs have been reported in the Hjelmgren and Litwin attributed the phenomenon to the substrate resistance, while Lu et al. concluded that it results from the transconductance, or simply speaking, the size of the transistor. In this paper, we extend the dual-feedback circuit methodology for the three-terminal FET model proposed by Lu et al. into a more general four-terminal model in order to account for the influence of the substrate resistance. Our results show that, for a given MOSFET, either substrate resistance or transconductance may cause a kink in S-22. In addition to the single kink, which results from the above two factors, the double kinks, which appear when the substrate resistance of a MOSFET is within a middle range (approximately 10(2) to 10(4) Omega) can also be accounted for by our extended model. Experimental data representative of 0.25-mum-gate MOSFETs are adopted to verify our theory. Excellent agreement between theoretical values and experimental data has been found, which indicates our theory can successfully explain the S-22 kink phenomenon in deep-submicrometer RF MOSFETs.[[note]]SC
The functional cooperation of MAP1A heavy chain and light chain 2 in the binding of microtubules.
No full textA new kind of double phase elliptic inclusions with logarithmic perturbation terms II: Applications
No full textThis paper studies several special cases of a double phase elliptic inclusion problem (DPEI) that involves a nonlinear and nonhomogeneous partial differential operator with unbalanced growth and logarithmic perturbation terms, and two multivalued functions defined in the domain and its boundary. We establish existence and extremality results, focusing on the following two assumptions: the multivalued terms are formulated by the Clarke's generalized subdifferential operators of locally Lipschitz functions; the multivalued terms are generated by discontinuous multifunctions. When the appropriate multivalued functions are formulated by two interval functions, we develop a unifying method to construct the nontrivial sub- and supersolutions for the inequalities and inclusions under considerations, hence we obtain suitable existence and extremality results
The functional cooperation of MAP1A heavy chain and light chain 2 in the binding of microtubules.
No full textAn analysis of the anomalous dip in scattering parameter S-11 of InGaP/GaAs heterojunction bipolar transistors (HBTs)
No full text[[abstract]]The kink phenomenon in scattering parameter S-22 of InGaP-GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP-GaAs HBTs can be represented by a simple series resistance-capacitance (R-C) circuit at low frequencies and a simple parallel R-C circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior Of S-22 of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain-source output resistance R-ds obscures the ambivalent characteristics.[[note]]SC
Monolithic InGaP-GaAsHBT receiver front-end with 6 mW DC power consumption for 5 GHz band WLAN applications
No full text[[abstract]]A very low power consumption (6 mW) 5 GHz band receiver front-end using InGaP-GaAs HBT technology is reported. The receiver front-end is composed of a cascode low noise amplifier followed by a double-balanced mixer with the RF transconductor stage placed above the Gilbert quad for direct-coupled connection. The RF band of this receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz IF frequency. Input-return-loss (S-11) in RF port smaller than -12 dB and excellent power-conversion-gain of 35.4 dB are achieved. Input 1 dB compression point (P-1dB) and input third-order intercept point (IIP3) of -24 and -3 dBm, respectively, are also achieved.[[note]]SC
NF-kappaB p50 promotes tumor cell invasion through negative regulation of invasion suppressor gene CRMP-1 in human lung adenocarcinoma cells.
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