7,554 research outputs found

    The thermal decomposition of diazirines: 3-(3-methyldiazirin-3-yl)propan-1-ol and 3-(3-methyldiazirin-3-yl)propanoic acid

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    PT: J; CR: BIGOT B, 1978, J AM CHEM SOC, V100, P6575 BRIDGE MR, 1969, J CHEM SOC A, P91 CHURCH RFR, 1970, J ORG CHEM, V35, P2465 CLOSS GL, 1965, J AM CHEM SOC, V87, P4270 EFFIO A, 1980, J AM CHEM SOC, V102, P1734 FIGUERA JM, 1976, AN QUIM, V72, P737 FIGUERA JM, 1978, J CHEM SOC F1, V74, P809 FIGUERA JM, 1979, J PHOTOCHEM, V10, P473 FREY HM, 1963, J CHEM SOC, P3514 FREY HM, 1964, J CHEM SOC, P4700 FREY HM, 1965, J CHEM SOC, P1700 FREY HM, 1965, J CHEM SOC, P3101 FREY HM, 1966, J CHEM SOC A, P968 FREY HM, 1977, J CHEM SOC F1, V73, P2010 FREY HM, 1979, J CHEM SOC A, P1916 GANZER GA, 1986, J AM CHEM SOC, V108, P1517 GRILLER D, 1982, J AM CHEM SOC, V104, P5549 LAL D, 1974, J AM CHEM SOC, V96, P6355 LIU MTH, 1972, INT J CHEM KINET, V4, P229 LIU MTH, 1972, J PHYS CHEM-US, V76, P797 LIU MTH, 1973, CAN J CHEM, V51, P2393 LIU MTH, 1974, J CHEM SOC P2, P937 LIU MTH, 1977, CAN J CHEM, V55, P3596 LIU MTH, 1982, CHEM SOC REV, V11, P127 LIU MTH, 1984, J CHEM SOC CHEM COMM, P1062 LIU MTH, 1984, TETRAHEDRON, V40, P887 LIU MTH, 1985, J CHEM SOC CHEM COMM, P982 LIU MTH, 1986, J CHEM SOC PERK T 2, P211 LIU MTH, 1987, CHEM DIAZIRINES, V1, P111 MANSOOR AM, 1966, TETRAHEDRON LETT, P1753 MANSOOR M, 1967, THESIS U SOUTHAMPTON MOSS RA, 1984, TETRAHEDRON LETT, V25, P1023 NEUVARAND EW, 1967, J PHYS CHEM-US, V71, P1229 SCHMID P, 1979, INT J CHEM KINET, V11, P333 SHERIDAN RS, 1984, J AM CHEM SOC, V106, P436 SKELL PS, 1972, TETRAHEDRON, V28, P3571 SMITH NP, 1979, J CHEM SOC P2, P213 SMITH RAG, 1975, J CHEM SOC P2, P686 VOIGT E, 1975, CHEM BER, V108, P3326; NR: 39; TC: 8; J9: J CHEM SOC PERKIN TRANS 2; PG: 7; GA: DD960Source type: Electronic(1

    Synthesis and characterization of fluorinated beta-ketoiminate and imino-alcoholate Pd complexes: precursors for palladium chemical vapor deposition

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    [[abstract]]The design and synthesis of Pd complexes with two beta-ketoiminate or with two imino-alcoholate chelate ligands is reported. In order to establish their structures in the solid-state, methoxyethyl substituted complexes 1c and 2c were characterized by single crystal X-ray diffraction, showing a square-planar local coordination for the Pd atom, but the beta-ketoiminate ligands of 1c gave a bent basal plane involving two chelating hexagons, which was in sharp contrast to the boat configuration of the imino-alcoholate ligands observed in the second complex 2c. Chemical vapor deposition (CVD) experiments were conducted at deposition temperatures of 250-350 degreesC. Scanning electron micrographs (SEM) were taken to reveal the surface morphologies and grain sizes of the Pd metal thin films. The resulting thin films were found to contain a low level of carbon and oxygen impurities using O-2 as the carrier gas, as measured by X-ray photoelectron spectroscopy (XPS).[[fileno]]2010302010012[[department]]化學

    Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application

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    [[abstract]]Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such as Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are of concern for sub-0.18-mum devices. In this study, HDP-FSG films show different F concentrations at different locations on an 8-inch wafer. In addition, the FSG film shows poor thermal stability and F diffuses out of the film after high temperature annealing and the pressure cook test (PCT). However, the thermal stability of FSG film can be improved by capping with an oxide layer. The results indicate that silicon rich oxide (SRO) has a better effect at blocking the F diffusion out of FSG films at high temperature than plasma enhanced oxide (PE-OX). For the gap fill capability, HDP-FSG can fill all 0.23-mum gaps and some of the 0.21-mum gaps with an aspect ratio <3.8 but not the 0.19-mum gaps. A 8000 Angstrom HDP-FSG film with 600 Angstrom USG liner and 2000 Angstrom cap layer shows approximately 7.5 to 7.7% capacitance reduction on 0.23/0.23-mum gaps when compared with USG (undoped silicate glass). In addition, FSG has a larger capacitance reduction on the wider metal lines than the thinner metal lines at the same gap size due to a capacitance fringe effect. The via resistance for 0.26 mum unlanded via (which allow minor photo mis-alignment) of HDP-FSG film is also similar to that of USG. (C) 2001 Elsevier Science B.V. All rights reserved.[[note]]SC

    老年痴呆患者疼痛评估工具的研究进展

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    Author name used in this publication: 雷逸华, Liu Yat-waTitle in Traditional Chinese: 老年癡呆患者疼痛評估工具的研究進展Journal title in Traditional Chinese: 中華護理雜誌2007-2008 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishedVoR allowe
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