1,721,011 research outputs found
Application of adiabaticity map: highly efficient coupling from optical fibers to silicon waveguides by adiabatic mode evolution
No full textEfficient coupling of light from an optical fiber to silicon waveguides is a challenging task in integrated photonics. Couplers based on adiabatic mode evolution have the advantages of high bandwidth and low loss but are often accompanied by longer device lengths. In this paper, we introduce the concept of adiabaticity map and optimize the coupling between an optical fiber and Si waveguides by selecting routes on the map that minimize unwanted mode coupling. The map clearly indicates areas in mode evolution where supermode coupling is large and identifies optimal routes for efficient mode evolution. Optimized interaction length and widths are obtained from the adiabaticity map. We obtain highly efficient coupling (96%) with large bandwidth (1-dB bandwidth 280 nm) and misalignment tolerance (⪆90 nm lateral misalignment range for 1-dB excess losses) for the TE polarization.Dynamics of Micro and Nano System
Electro-optic co-design for next generation silicon optical transmitters
No full textThis paper discusses our progress on high-speed optical transmitters for next generation intra-datacenter interconnects. Silicon integrated photonic systems have a key role to play in this evolution by allowing compact, fast, innovative and cost-effective devices to be manufactured in large volumes. Especially silicon Mach-Zehnder modulators are a very attractive candidate: they are easy to manufacture, easy to use and support both intensity as well as coherent modulation. Key to the next-generation optical transmitter is not only the very high datarates, but also the very small form-factor and low power consumption. This requires leveraging electro-optic co-design of driver electronics and optical modulators
Dual-frequency sweeping light source based on four-wave mixing in silicon-on-insulator nano-waveguide
Full text linkFour-wave mixing (FWM) is a well-known technique to achieve all-optical control wavelength conversion. We propose a well-designed silicon nano-waveguide based on silicon-on-insulator (SOI) to achieve FWM conversion. Particularly, the original signal light continuously sweeps along the C band, and the generated idler light is correspondingly sweeping as the original signal is swept. The wavelengths of the idler and signal lights are symmetric with respect to the pump light wavelength. Simulation and experimental results of the FWM conversion properties are well-matched. With the pump light filtered out, a dual-frequency continuously sweeping laser source is achieved, which could be applied in dual-frequency scanning interferometry to eliminate dynamic errors in practical use
Universal silicon ring resonator for error free transmission links
No full textWe report the design, fabrication, and characterization of a universal silicon p-n junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, and in conjunction with a modulation efficiency of ~4 Vmm and >8 dB optical modulation extinction ratio (ER), enabling C band 50-Gb/s NRZ communication link with bit error rate (BER) ≤ 3×10-12. Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error free communication link, which paves the way to realize a >1.6 Tb/s all-silicon WDM based error free optical transceiver link in future and is essential for future programmable photonics circuits
High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband
No full textThe escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 × 4 electro-optic switch operating at the 2-μm waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 × 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband
Ion implantation in silicon for photonic device trimming
No full textWe implemented germanium ion implantation based refractive index change in integrated photonics devices for device trimming. Partial annealing of the ion implanted section revealed the possibility to permanently adjust the resonant wavelength peak position to a target wavelength
Dataset for: Ion implantation in silicon for trimming the operating wavelength of ring resonators
No full textDataset for: Ion implantation in silicon for trimming the operating wavelength of ring resonators (DOI: 10.1109/JSTQE.2018.2799660)
In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to control the operating wavelength of ring resonators, which is very sensitive to fabrication imperfections. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. In this paper we discuss design, modelling and fabrication of ring resonators and their subsequent trimming using ion implantation of germanium into silicon, followed by either rapid thermal annealing or localized laser annealing. The results confirm the ability permanently tune the position of the resonant wavelength to any point inside the free spectral range of the ring resonator, thus greatly reducing the amount of power required for active tuning of these devices.</span
Dataset for "Silicon-on-insulator free-carrier injection modulators for the mid-infrared"
No full textThis datset contains an Excel file with the data used to plot the graphs shown in Silicon-on-insulator free-carrier injection modulators for the mid-infrared by M. Nedeljkovic et al accepted for publication in Optics Letters in December 2018. </span
Low loss SOI waveguides and MMIs at the MIR wavelength of 2 µm
No full textIn this letter, we demonstrate high-performance waveguides and MMIs on an SOI platform at the fixed wavelength of 2 µm. The propagation loss demonstrated by the waveguides and the insertion loss of the MMIs are as low as 1 dB/cm and 0.29 dB, respectively, with TE polarization. To the best of our knowledge, this is the lowest loss for Si rib waveguides reported at a wavelength of 2 µm
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