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Frequency Scan of a Quadrupole Mass Analyzer in the Third Stability Region for Protein Analysis and Development of Absolute Charge State Assignment Program
No full textI. 現今大多數的四極柱質譜儀，幾乎都是以電壓掃描的方式來作質譜掃描，其頻率約在1MHz左右，而當掃描的質量範圍越來越大，所需要的掃描電壓也越來越大，若是用頻率掃描的方式而言，對於大的質量範圍，所需要的掃描頻率則越小，而在電路設計上，降低掃描頻率是比增加掃描電壓容易的，操作上也較安全，本實驗的目的，是嘗試將四極柱質譜儀，以頻率掃描的方式來操作，而達成大分子的質譜掃描，在儀器設備方面，離子源採用電灑游離法產生離子，電路設備頻率範圍為400~100 kHz，交流電壓約100~200伏特，樣品採用蛋白質gramicidin S，對於此蛋白質正兩價離子，質荷比為570.5，質譜解晰度最高可達到約200。實驗結果並與電腦模擬做一對照。由實驗結果看來，若是未來能設計高電壓及高頻率的電源供應器，頻率掃描的四極柱質譜儀能有其發展空間。
II. 光探測法之單粒子質譜儀，是將帶電粒子捕捉在四極離子阱中，利用電子槍改變粒子的質荷比，被捕捉粒子的質荷比，可由調整帶電粒子的穩定態軌跡求得，電壓與頻率二者是實驗的控制參數，粒子絕對質量的決定，是設定一組電荷數去尋找對應的一組質量解，粒子質量的最小標準差作為最佳質量解的依據，我撰寫二個電腦程式以加快資料分析的速度及正確性。Part A: A linear quadrupole mass spectrometer operating in the third stability region [(a, q) ≈ (3, 3)] has been developed and utilized to obtain the mass spectra of multiply charged protein ions generated by electrospray ionization. The spectra were acquired by scanning the frequency of the quadrupole with a home-built wide-band power amplifier from 400 to 100 kHz at constant voltage amplitudes in the range of 100 V. A resolution approaching R1/2 = 200 was achieved for doubly charged gramicidin S ions at m/z 570.5. Besides the experiments, a computer simulation was utilized to discuss the results of experiments. Further improvement of the mass resolution is expected when a higher voltage power amplifier is used.
Part B: A new technique for determining the masses of nanoparticles in a quadrupole ion trap has been developed in our group. When a particle is introduced into the ion trap and trapped, mass-to-charge ratio of the particle is determined by varying the voltage and RF frequency. Computer programs were utilized to speed the data analysis. Two kinds of programs were compared to testify the validity of data analysis.Part A: Frequency scan of a quadrupole mass analyzer in the third stability region for protein analysis
Chapter 1: Introduction---------------------------------1
Chapter 2: Theoretical backgrounds
2.1 Ion motion in Quadrupole mass analyzer------5
2.2 Scan modes of Quadrupole mass analysis------7
2.2.1 AS mode (Voltage Amplitude Scan mode)--7
2.2.2 FS mode (Frequency Scan mode)---------8
2.3 Resolution( m/△m1/2 )----------------------8
2.4 ESI (eletrospray ionization)----------------10
2.4.1 Charged Residue Model (CRM)------------11
2.4.2 Ion Evaporation Model (IEM)------------12
Chapter 3: Experiments
3.1 Instruments setup---------------------------13
3.2 Ion source----------------------------------14
Chapter 4: Results and discussion
4.1 Results-------------------------------------16
4.2 Discussion----------------------------------20
4.3 Simulation----------------------------------23
4.3.1 Ion velocity---------------------------23
4.3.2 Initial conditions---------------------24
4.3.3 R1/2 in Region I and Region III--------25
4.4 Conclusions---------------------------------27
Part B: Development of Absolute Charge State Assignment Program
1.1 Introduction--------------------------------28
1.2 Program-------------------------------------29
1.2.1 Charge Number Approaching Program------29
1.2.2 Absolute Charge Number Program---------33
1.3 Conclusions---------------------------------37
References-------------- -------------------------------3
A study on Ming Tai-tsu’s political ideas and the practice of enlightenment
No full text本文以探討明太祖之政治理念與教化實踐為目的，欲以分析明太祖之政治觀與對不同政治角色之教化實踐的意義，進而藉此以試圖描繪明太祖之專制統治的樣貌。全文的內容可為兩個部分：第一部分將分析明太祖之政治理念及其特色（第一章），第二部分將探討明太祖對於知識份子與群眾教化的實踐（第二、三章）。在第一部分中，我們將會看到，明太祖有意地援引儒、釋、道三教的思想傳統，以形塑人君之政治統治的權威形象。在第二部分中，本文將先討論明太祖如何藉由對於孔廟祀典與相關廟祀的更動與創制，以表達其對於道統與治統這組界定政治統治之合法性的概念的思考，進而回應知識份子所提出之「治」、「教」裂為二的批判論述；此外，本文又將討論明太祖對於鄉里社會之秩序的非正常化現況、及其對於相關問題的回應與制度性的更定，以建構教化群眾的社會機制，同時，也欲藉此以擴展國家對於鄉里社會的支配能力。This study deals with Ming Tai-tsu’s political ideas and his practice of enlightenment, analyzing Ming Tai-tsu’s political thought and the meaning of his practice and enlightenment , capture the image of Ming tai-tsu’s autocracy. In chapter one, we analyze the characteristices of Ming Tai-tsu’s political ideas. We discover that Ming Tai-tsu expresses his viewpoints via altering the sacrifice of Heaven and Earth, and via politically interpreting those classics of Confucianism, Taoism and Buddhism. In chapter two, we talk about Ming Tai-tsu changes some regulations of Confucian temple (孔廟) and found the temple of emperors (帝王廟). These manifest that Ming Tai-tsu denies the supremacy of the geneology of Tao (道統), and he would like to raise the status of the geneology of sovereignty (治統). It means that Ming Tai-tsu weakens the autonomy of intellectuals. In chapter three, we discuss Ming Tai-tsu’s viewpoints about the orders of local societies. In the one hand, he constrains the influence of local wealthy families, rendering some powers of self-government and believing the administration of local societies can be undertaken by multitude; in the other hand, he enlightens multitude by politically advocating Confucian ethics, strengthening his power over local societies
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates
No full text現今的半導體產業中，傳統的矽製程發展最成熟並且廣泛應用，因此矽材料仍為半導體產業的主流。但受限於物理上的限制，傳統矽製程終將面臨無法再縮小以求速度和成本降低的情況。所以本實驗發展了和矽同為四族半導體元素的鍺材料，其優點為遷移率較矽高，並且在光通訊波長較矽有更大的光吸收係數。因此將來可以利用其相較於矽的優點，用以結合傳統矽製程並發展更加快速之元件。
本實驗利用絕緣層上覆矽基板及純矽基板，開發出在二氧化矽絕緣層上覆多晶鍺之結構。在此我們利用低成本並且結合矽製程之液相結晶法來製作絕緣層上覆多晶鍺。此方法所憑藉的物理原理為使沉積上之非晶鍺利用一連串製程步驟來使其接觸初始材料之單晶矽，並將其快速加熱至熔點以上熔化，接著自然降溫凝固重新結晶，用以形成多晶鍺。
基於液相結晶法，本實驗成功利用兩種不同基板分別獲得鍺厚度約300nm和100nm之絕緣層上覆多晶鍺。並且其鍺區域約為5μm×5μm及10μm×10μm之陣列。另外，此實驗亦獲得長條狀約300nm厚之多晶鍺區域。藉由以上材料之製作，以期將來可使其整合在矽基板之新元件設計上，例如光偵測器。因此，此研究為將來半導體產業重要發展趨勢之一。Traditional silicon technology is mature and widespread in application nowadays. Therefore, silicon is the main material in semiconductor industry. But by the limit of physics, silicon technology will finally face that it cannot reduce its scale in order to pursue high speed and low cost. Consequently, germanium as group IV as silicon is developed in this thesis. Its advantages are high mobility and larger absorption at communication wavelength than silicon. As a result, it can be combined with traditional silicon technology in order to develop more high-speed devices.
In this thesis, we developed poly-germanium on insulator (GOI) by SOI and Si substrates using a low-cost liquid phase epitaxy (LPE) method. Its principle is to anneal Ge above its melting point, and cool it rapidly in order to achieve recrystallization.
We have acquired 300-nm-thick and 100-nm-thick poly-GOI respectively by two different methods in this study. Their patterns were 5μm×5μm and 10μm×10μm square arrays. In addition, we have also acquired 300-nm-thick strip GOI. By the method, it is expected to be integrated to Si substrates for new devices, such as photodetectors. Therefore, this investigation is one of the important development trends for semiconductor industry
Efficient Obstacle-Avoiding Rectilinear Steiner Tree Construction
No full text在平面上，考慮障礙物之直角史坦納(Steiner)樹為利用直線或橫線連接所有節點、同時避免穿越障礙物的史坦納樹。在先進的積體電路設計中，繞線的過程必須考慮各種線路、區塊所產生的障礙物，因此這個問題越來越受到重視與關注。除此之外，由於積體電路為多層之製程，這使得在多層繞線平面中，建造考慮障礙物之直角史坦納樹成為一個新的挑戰。然而，考慮障礙物與多層繞線平面大幅增加了問題的難度，所以現存的研究結果都還有進步的空間。在此篇論文中，我們提出一個利用考慮障礙物之連結圖的演算法，它能快速地建造考慮障礙物之直角史坦納樹，而且不同於現存的演算法，我們的演算法在節點數為二以及其他許多情況達到最佳解。而對於在多層繞線平面中的問題，我們也提出許多不同於單層繞線平面的性質，並且適當地延伸單層繞線的演算法來解決此問題。實驗結果顯示，比起當今先進的演算法，我們的演算法能產生線長更短的考慮障礙物之直角史坦納樹。Given a set of pins and a set of obstacles on a plane, an obstacle-avoiding rectilinear Steiner minimal tree (OARSMT) connects these pins by vertical/horizontal edges, possibly through some additional points (called Steiner points), and avoids running through any obstacle to construct a tree with a minimal total wirelength. The OARSMT problem becomes more important than ever for modern nanometer IC designs which need to consider numerous routing obstacles incurred from power networks, prerouted nets, IP blocks, feature patterns for manufacturability improvement, etc. Consequently, the OARSMT problem has received dramatically increasing attention recently. Besides, because modern nanometer IC designs are processed layer by layer, it is a new challenge for designers to deal with the multi-layer OARSMT (ML-OARSMT) problem where pins are connected by vertical/horizontal edges within layers and vias between layers. Nevertheless, the presences of obstacles and multi-layers significantly increase the problem complexity, and thus most previous works for the OARSMT problem on a layer suffer from either poor quality or expensive running time. Based on the obstacle-avoiding spanning graph (OASG), this thesis presents an efficient algorithm with some theoretical optimality guarantees for the OARSMT construction on a layer. Unlike previous heuristics, our algorithm guarantees to find an optimal solution for any 2-pin net and many higher-pin nets. Furthermore, we identify key different properties of the ML-OARSMT problem from the single-layer counterpart and present the first algorithm to solve the ML-OARSMT problem. This algorithm can also guarantee an optimal solution for any 2-pin net and many higher-pin nets. Extensive experiments show that our algorithms result in significantly shorter wirelengths than all state-of-the-art works.Acknowledgements i
Abstract (Chinese) ii
Abstract iii
List of Tables vii
List of Figures viii
Chapter 1. Introduction 1
1.1 Obstacle-Avoiding Rectilinear Routing ............. 1
1.2 Previous Work ..................................... 3
1.2.1 Maze-Routing Based Approach .................... 3
1.2.2 Nondeterministic Approach ...................... 4
1.2.3 Construction-by-Correction Approach ............ 5
1.2.4 Connection-Graph Based Approach ................ 6
1.2.5 Hybrid Approach ................................ 9
1.3 Contributions ..................................... 9
1.4 Thesis Organization ............................... 11
Chapter 2. Problem Formulations 12
Chapter 3. Algorithm 15
3.1 OASG Construction ................................. 16
3.1.1 OASG Construction within a Region .............. 19
3.1.2 Properties of Pin-Vertex Shortest Paths ........ 22
3.2 OAST Construction ................................. 24
3.2.1 Pin-Vertices Shortest Path Computation ......... 24
3.2.2 Initial OAST Construction ...................... 25
3.2.3 Local Refinement ............................... 25
3.3 OARST Construction ................................ 26
3.4 OARSMT Construction ............................... 29
3.4.1 Overlapping Edge Removal ....................... 29
3.4.2 Redundant Vertex Removal ....................... 31
3.4.3 U-Shaped Pattern Refinement .................... 31
3.5 Optimality ........................................ 33
3.6 Complexity Analysis ............................... 35
3.6.1 Number of Edges in the OASG .................... 35
3.6.2 Time Complexity ................................ 39
Chapter 4. Extension to the ML-OARSMT Problem 41
4.1 ML-OASG Construction .............................. 43
4.1.1 Vertex Projection between Layers ............... 47
4.1.2 Vertex Projection within a Layer ............... 49
4.1.3 ML-OASG Construction ........................... 50
4.2 ML-OAST Construction .............................. 53
4.3 ML-OARST Construction ............................. 54
4.4 ML-OARSMT Construction ............................ 54
4.5 Optimality ........................................ 55
4.6 Complexity Analysis ............................... 56
Chapter 5. Experimental Results 57
5.1 The OARSMT problem ................................ 57
5.2 The ML-OARSMT problem ............................. 61
Chapter 6. Conclusions 67
Bibliography 6
Multi-layer obstacle-avoiding rectilinear Steiner tree construction based on spanning graphs
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