1,467 research outputs found
The political role of the people's liberation army 1949-1973
Get PDFThis thesis is to study the political role of the People's Liberation Army from the approach of structure and function. The framework of the thesis consists of three major parts, first, the influence of Chinese traditional political culture on, and the formation of, the political role of the PL A; second, the influence of domestic political struggles and external military conflicts on the development of the political role of the PLA; and the third, the analysis of the transition of the PLA's political role from the structure and personnel arrangements of the CCPCC Within the above-mentioned three scopes, this thesis make a thorough discussion on the following: (1) The relationship between the structure of the PRC and the formation of the PLA's political role; (2) How has ideology influenced the army's political role; (3) What is Mao's viewpoint and his influence on the development of the army's political role; (4) What is the link between the army and the party, and how has this developed; (6) What accounts for the expansion of the PLA's political functions; (7) What is the influence of political factional struggles on the PLA's political role; (8) Is it political institution or military institution that controls the recruitment of the military elite; (9) What are the disparities between the military elite in handling international conflicts and what are their political considerations; (10) What is the Party's position in the army; (11) How have the Party’s important meetings and personnel arrangements influenced the rise and fall of the PLA's political role
Supplemental Material, sj-pdf-1-ear-10.1177_01455613211037645 - Factors Associated With Hearing Outcomes After Stapedotomy in Taiwanese Patients With Clinical Otosclerosis
No full textSupplemental Material, sj-pdf-1-ear-10.1177_01455613211037645 for Factors Associated With Hearing Outcomes After Stapedotomy in Taiwanese Patients With Clinical Otosclerosis by Pei-Hsin Chen, Kai-Nan Lin, Hsiu-Yin Lin, Rui-Bin Yu, Pi-Yun Liu, Wan-Ting Shih and Jeng-Wen Chen in Ear, Nose & Throat Journal</p
Supplementary_Figure_1and2 – Supplemental material for Clinicopathological and molecular differences in colorectal cancer according to location
No full textSupplemental material, Supplementary_Figure_1and2 for Clinicopathological and molecular differences in colorectal cancer according to location by Yu-Lun Hsu, Chun-Chi Lin, Jeng-Kai Jiang, Hung-Hsin Lin, Yuan-Tzu Lan, Huann-Sheng Wang, Shung-Haur Yang, Wei-Shone Chen, Tzu-Chen Lin, Jen-Kou Lin, Pei-Ching Lin and Shih-Ching Chang in The International Journal of Biological Markers</p
Supplementary_tables_1-5 – Supplemental material for Clinicopathological and molecular differences in colorectal cancer according to location
No full textSupplemental material, Supplementary_tables_1-5 for Clinicopathological and molecular differences in colorectal cancer according to location by Yu-Lun Hsu, Chun-Chi Lin, Jeng-Kai Jiang, Hung-Hsin Lin, Yuan-Tzu Lan, Huann-Sheng Wang, Shung-Haur Yang, Wei-Shone Chen, Tzu-Chen Lin, Jen-Kou Lin, Pei-Ching Lin and Shih-Ching Chang in The International Journal of Biological Markers</p
Zai zhong he piao yi ya suo shi yan zhong de mai chong chang du suo jian yu zai shi yan ceng mian shang de li zi shu zong xiang can shu de tao lun
No full textShih, Kai = 在中和漂移壓縮實驗中的脈衝長度縮減與在實驗層面上的粒子束縱向參數的討論 / 師愷.Thesis M.Phil. Chinese University of Hong Kong 2014.Includes bibliographical references (leaves 94-96).Abstracts also in Chinese.Title from PDF title page (viewed on 27, September, 2016).Shih, Kai = Zai zhong he piao yi ya suo shi yan zhong de mai chong chang du suo jian yu zai shi yan ceng mian shang de li zi shu zong xiang can shu de tao lun / Shi Kai
Electron transport in In-rich InxGa1-xN films
No full text本論文主要是探討多銦氮化銦鎵薄膜InxGa1-xN (x = 1, 0.98, 0.92,
0.8, 0.7) 的電子傳輸性質。我們測量了大溫度範圍下氮化銦鎵的電子
傳輸特性。我們發現在實驗誤差範圍內，樣品的載子濃度在測量的溫
度範圍內幾乎與溫度無關，這是金屬的行為。此外我們利用van der
Pauw 四點量測法計算樣品的電阻率。綜合電阻率與載子濃度的數據
顯示，我們的樣品隨著鎵的成分上升，有一個由金屬到半導體的轉
變。我們也計算了樣品的載子遷移率，載子遷移率在整個量測的溫度
範圍內，隨著鎵成分的升高而降低，這也印證了氮化銦的傳輸特性優
於氮化鎵。由於金屬電阻率在低溫下遵守Bloch T5 定理，對於銦濃
度大於等於92% 的樣品，我們檢查了它們的電阻率與Bloch T5 定
理的符合程度。分析的結果顯示高銦成分的樣品的電阻率非常符合
Bloch T5 定理，從而進一步的支持了高銦濃度的氮化銦鎵薄膜傳輸特
性與金屬十分類似。This thesis focuses on electron transport properties in InxGa1−xN (x =1,
0.98, 0.92, 0.8, 0.7) thin films. We have performed transport measurements
on InxGa1−xN thin films over a wide temperature range. We observed that
within experimental error, the carrier densities are temperature independent.
Besides, the resistivities, combined with the carrier densities, show
a tendency of transition from metal to semiconductor with increasing Ga
composition. The calculated mobility shows that for metallic like samples
(InxGa1−xN with x ≥0.92), the dominant scattering mechanism is the imperfection
scattering over the whole temperature range. We also showed
that Bloch T5 curves fit very well the resistivities of samples InxGa1−xN
with x =1, 0.98, 0.92, once again supporting that very high In composition
InxGa1−xN films can be considered as degenerate electron systems in which
the Fermi level is much higher than conduction-band bottom over the whole
measurement range.1 Introduction 1
2 Theoretical background 4
2.1 Classical Hall effect . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Van der Pauwmethod . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Electrical transport properties . . . . . . . . . . . . . . . . . . 10
2.3.1 Ohm’s law and electrical conductivity . . . . . . . . . . 10
2.3.2 Relaxation time approximation . . . . . . . . . . . . . 12
2.3.3 The temperature-dependent electron resistivity of metals 14
3 Sample fabrication and Hall measurements 20
3.1 Sample fabrication . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1.1 Metal-organic vapor phase epitaxy . . . . . . . . . . . 20
3.1.2 Sample structure . . . . . . . . . . . . . . . . . . . . . 21
3.2 Hall measurements . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.1 Experimental setup . . . . . . . . . . . . . . . . . . . . 23
3.2.2 Ohmic contacts . . . . . . . . . . . . . . . . . . . . . . 23
3.2.3 Elimination of background voltage . . . . . . . . . . . 25
4 Electrical properties of In-rich InxGa1−xN films 27
4.1 Deviation of the Rxy fromzero at zero magnetic field . . . . . 27
4.2 Temperature dependence of carrier density, resistivity and mobility
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
4.3 Curve fitting of Bloch T5 law . . . . . . . . . . . . . . . . . . 38
5 Conclusions 42
Bibliography 4
Design of Mixers for Microwave and Millimeter-wave Applications
No full text本論文主要是在討論被動的平衡式次諧波混波器、利用改良的平衡不平衡器以實現在高頻的寬二極體頻混波器以及架構上較為簡單的閘極驅動單端次諧波混波器。主要研究方向在於如何以較低的本地振盪訊號即可驅勳混波器達成混波效果。
此論文共分三個部份皆為被動式的混波器，在第一部份中先討論並設計一於pHEMT 製程上的71-76 GHz平衝式閘極驅動次諧波混頻器並利用相同架構的混波器作為基本元件實現一60 GHz 的解調變器；第二部份則是介紹一用於天文觀測所需的高頻混波器，矽基材料所製作的電晶體之最大振盪頻率不夠高，在高頻時已無法提供應有的增益，所以這類高頻電路常會以砷化鎵作為實現的材料但是由於基板厚度較厚，以微帶線在高頻實現馬遜平衡轉非平衡器時會受到接地不良的影響而導致其特性不佳，所以在這一部份藉由增強耦合強度來改進此一問題，進而使整體電路更加對稱增加設計上的方便性；第三部份是設計並實現一CMOS單端的閘極驅動次諧波混波器，由於沒有使用平衡轉非平衡器，其面積可以較為縮減。雖然沒有平衡轉非平衡器，但是在利用耦合線當作共振腔來作為濾波器之後隔離度也有相當的改善。將汲極和基座相接可以抑制在中頻輸入信號強度增加時所造成的直流位準漂移，因為只用到一個電晶體，所以只需要約0 dBm即可推動此混波器波減少系統中其他電路的負擔。This thesis discusses an gate-pumped resistive sub-harmonic mixer, high frequency broadband diode mixer with improved balun in high frequency and a single-ended gate-pumped sub-harmonic mixer. The main purpose is to reduce the level of LO power needed to drive a mixer.
This thesis consists of three parts and they are all passive mixer in common. The first part introduced a 71-76 GHz balanced resistive gate-pumped mixer using in pHEMT process. Based on this topology, a 60 GHz demodulator is also presented. In the second part, a high frequency diode mixer for space observation is realized. Because the MOSFET fabricated by Si-based material has no gain in such high frequency, the circuits in high frequency usually are implemented in GaAs process. However the thickness of the substrate in these processes is large and may corrupt the ideal ground needed in Marchand balun. A modified Marchand balun which has better coupling factor and resists non-ideal ground effect is introduced in this part to enhance the symmetry of the circuit and relieve the design difficulty. A single-ended gate-pumped sub-harmonic mixer is designed and presented in part three. Without the baluns, the size of the mixer can be more compact than balanced mixers. Although there is no balun, the isolation can still be achieved by filter using coupled-line resonator which is more compact than a balun. Connecting drain to body can help the problem that dc voltage of drain changes. Due to its simple topology, this mixer can be driven with LO power of about only 0 dBm, and eases the requirement of other components in the system
Performance analysis of FH/MFSK systems using clipper receiver and error correcting codes against band multitone jammer in background noise environment
No full text- …
