3,134 research outputs found
Writing transition noise due to random particle distribution in thin recording media
No full textFluctuations in the magnetization transition due to random distribution of position, particle size, anisotropy and
misorientation of easy axis of a system of thermally activated noninteracting single domain particles (SDPs) in recording
media under a recording head field has been analyzed, and the corresponding variance examined, by Monte Carlo
simulation. Larger values of the thermal factor Kvp/kBT give rise to steeper magnetization hysteresis curves, narrower
transition widths and, correspondingly, sharper and narrower noise distributions. Heterogeneous media with an
admixture of several different particle size distributions lead to a wider transition width at a lower noise level. Random
anisotropy constant distribution imparts a far more severe effect to broaden the transition width while keeping the
variance wider and shallower than that due to random particle size distribution. Similarly, random in-plane misorientation
distribution of the easy axis is much less effective to broaden the transition width than that due to the out-of-plane
misorientation. Variance in the read-out voltage becomes asymmetric when the head gap length is comparable to the
transition widt
Study of the maintenance behavior of the red-bellied tree squirrel, Callosciurus-erythraeus.
No full textEffect of shoulder tightness on glenohumeral translation, scapular kinematics, and scapulo-humeral rhythm in subjects with stiff shoulders
No full textA superjunction insulated Gate Bipolar Transistor with bilateral HK insulators: A solution to charge imbalance
No full textA superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the n/p pillars are not only depleted by each other, but also by the bilateral HK capacitors adaptively. Thus the drift region can be fully depleted whether or not there is charge imbalance. The effect is verified by Sentaurus TCAD. The results show that the BV of the proposed device has strong immunity to charge imbalance. In addition, the BHK-SJ-IGBT achieves better trade-off relationship between the blocking voltage(BV) and the specific on- resistance(Ron,sp) than the conventional SJ IGBT(C-SJ-IGBT). ? 2014 IEEE.EI
Effects of macromolecular architecture on the micellization behavior of complex block copolymers
No full text
Risk factor analysis of high school basketball player ankle injuries: a prospective controlled cohort study evaluating postural sway, ankle strength and flexibility
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Risk-Factor Analysis of High School Basketball–Player Ankle Injuries: A Prospective Controlled Cohort Study Evaluating Postural Sway, Ankle Strength
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