1,721,009 research outputs found
Measurement and development of a bipolar electrostatic chuck in serial plasma processes
No full text雙極性靜電吸盤(Electrostatic Chuck,ESC)已經在一系列的電漿製程環境中被研發使用，它的優勢是在於它不需加入電漿即可以有吸附能力，所以在業界逐漸廣泛運用。而雙極性ESC之上下電極比例、電極材料、表面粗糙度、表面紋路、結合膠的選用、晶圓與雙極性ESC之間的氦氣壓力分佈以及雙極性ESC的背後水冷設計都對雙極性ESC性能優劣有決定性的影響。實驗過程中，我們以鋁金屬作為雙極性ESC的重要材料，並將鋁表面作硬陽極處理來形成第一層介電層，上下電極的面積比例也以互補的靜電吸力作有效的均勻分配，結合膠的選用乃採用熱膨脹係數低、介電常數低、熱傳係數大與結合力強的Epoxy系列結合膠作為第二層介電層。我們利用所建構的高密度電漿環境測試平台，以VB為軟體介面、高感度感測器為硬體介面和RS-232為通訊介面，來測試我們所設計的雙極性ESC之吸附晶片、釋放晶片及晶片散熱的能力。從實驗中發現，在工作電壓未達崩潰電壓情形下，ESC的吸附能力與工作電壓成正比關係。ESC介電層的電阻率降得越低，則ESC吸附與釋放的時間越短，而表面粗糙度越好有助於雙極性ESC的熱傳效率的改善與介電層電阻率的下降。藉由此實驗所得到的數據可以提供設計雙極性ESC上有一個較完善的設計準則，並提供研發廠商一個雙極性ESC的測試平台，對於往後掌握雙極性ESC製程良率有很大的助益。The bipolar electrostatic chuck for silicon wafers has been developed for used in serial plasma process. The advantage of the bipolar electrostatic chuck is that attractions appear without plasma, so we take advantage of it in industry gradually. The bipolar electrostatic chuck’s proper proportion between the top plate and the bottom plate, material of plates, roughness of plate’s surface, marking of plate’s surface, the choice of the gelatin, the disposal of helium’s pressure between the wafer and the bipolar electrostatic chuck and the rear of the bipolar electrostatic chuck’s cooling water design affect the quality of the bipolar electrostatic chuck importantly.
In the experiment, the aluminum material is used for the bipolar electrostatic chuck , and hard anodizing is applied to aluminum to build the first dielectric layer. The proper proportion between the top plate and the bottom plate of the bipolar electrostatic chuck is effectively uniformly distributed by the reciprocative electrostatic attraction. The low dilation coefficient, the low dielectric coefficient, the high thermal coefficient and the strong binding are the main factors in the choice of the gelatin. The gelatin, which is a kind of Epoxy is used to build the second dielectric layer. We build the high density plasma’s test stage which is built by Visual Basic that is a software interface, high sensitivity sensor that is a hardware interface and RS-232 that is a message interface. The stage tests the bipolar electrostatic chuck’s abilities of suction, delivery and cooling. We can find some key points in the experiment. When the working voltage is less than the breakdown voltage, there is a direct proportion between suction and working voltage. When the resistivity of the bipolar electrostatic chuck’s dielectric layer is lower, the time of suction and the time of dechucking is shorter. Better roughness of surface yields better thermal efficiency and lower resistivity of dielectric layers. From the data of the experiments, we can give the bipolar electrostatic chuck a better design principle, and we can also provide manufacturers a test stage that can be used to produce better quality products.目 錄
誌謝---------------------------------------Ι
摘要---------------------------------------Ⅱ
英文摘要-----------------------------------Ⅲ
目錄---------------------------------------Ⅴ
圖表目錄-----------------------------------Ⅶ
第一章:簡介與文獻回顧----------------------1
1.1前言--------------------------------1
1.2研究目的----------------------------1
1.3文獻回顧---------------------------2
第二章:理論架構分析------------------------6
2.1靜電吸盤的理論分析----------------------6
2.2電漿環境的理論分析---------------------14
第三章:雙極性靜電吸盤量測系統設計 --------18
3.1雙極性靜電吸盤的製作---------------18
3.2平面式電漿環境的製作---------------25
3.2.1 電漿腔體的製作-------------25
3.2.2 電漿管路的製作----------------------28
3.2.3 RF電漿產生器的配置-----------------32
3.2.4 自動化量測系統的配置-------34
第四章:量測系統操作-----------------------38
4.1雙極性靜電吸盤的操作---------------38
4.2電漿環境的操作---------------------40
第五章實驗量測與數據分析------------------42
5.1雙極性靜電吸盤吸附能力測試 ------------42
5.1.1量測方式以及概念 --------------------42
5.1.2 量測步驟 --------------------------43
5.2雙極性靜電吸盤吸附與釋放時間測試 ------46
5.3雙極性靜電吸盤上晶片溫度分佈測試---47
第六章:結果與討論-------------------------56
第七章:未來展望---------------------------58
參考文獻----------------------------------5
Effects of Calmodulin and Calneuron I on N-type Voltage-gated Calcium Channels
No full textN型電壓依賴性鈣離子通道（N-type Voltage gated Ca2+ channel, Cav2.2, N-type VGCC）最早發現於雞的背根神經節細胞（dorsal root ganglion）中，它會受到電位提升而活化開啟，而當鈣離子流入後，則會引發CDI（Ca2+ dependent inactivation）負回饋機制而抑制通道活性。過去對於CDI機制不太清楚，近年來已確定在L-及P/Q-type VGCCs中，是由鈣調素（Calmodulin）所調控的，但目前對於N-type VGCC的CDI機制還不瞭解。了了解N-type VGCC的CDI機制，我們將N-type VGCC與鈣調素同時表現於HEK293T中，紀錄鈣離子電流。實驗結果顯示，當細胞去極化達+20 mV時，在開啟後10 ms內會達到最大的鈣離子電流流入，之後在250 ms時，會下降至最大電流的13.3 ± 2.3%。如果將胞外溶液換為鋇離子，此不活化現象僅至82.4 ± 4.6%。而在鈣調素的N端以及C端EF hands突變株中，不活化現象則分別是43.1 ± 10.1% 及49.9 ± 8.2%。此外，如果我們將胞內溶液改為高緩衝液10 mM EDTA或BAPTA的情況下，也可恢復至87.2 ± 3.6% 及63.8 ± 8.2%。這些結果顯示，鈣調素的N端和C端皆可調控N-type VGCC的CDI，且此調控來自於廣泛性的鈣離子。另一方面，我們比較與鈣調素相似的鈣離子結合蛋白Calneuron I（Caln I）對N-type VGCC的調控。將Caln I與N-type VGCC同時表現於HEK293T中。實驗結果顯示，Caln I及其失去鈣離子結合功能的突變株在胞外鈣離子情況下都具有強烈的抑制作用，電流密度由-110.1 ± 29.9降至 -4.9 ± 5.0 及 -3.8 ± 2.3 pA/pF。然而，缺乏C端穿膜片段的突變株由於無法正常表現於細胞膜上，使其抑制作用降低至-33.1 ± 7.5 pA/pF。這些結果顯示N型電壓依賴性鈣離子通道可透過多種不同的鈣離子結合蛋白或機制調控其電生理活性。N-type Voltage gated Ca2+ channel (Cav2.2, N-type VGCC) is first identified in chicken dorsal root ganglion neurons. VGCCs control the influx of Ca2+ into neurons in response to membrane depolarization. The channel could be inactivated by the Ca2+ influxed, a process called Ca2+ dependent inactivation (CDI). Calmodulin (CaM) has been identified to mediate the CDI of L- and P/Q-type VGCC. However, the mechanism of N-type VGCC CDI is not clear and studied in this report. CaM and N-type VGCC were co-expressed in HEK293T cells and the Ca2+ currents were studied in whole-cell configuration. When cell was depolarized to +20 mV, an inward current was evoked and reached a maxima in 10 ms. The current was then declined to 13.3 ± 2.3% of the peak current in 250 ms. Replacing the external Ca2+ with Ba2+, the inactivation was 82.4 ± 4.6%. When the N- or C-lobe EF hands of CaM was mutated and unable to chelate Ca2+, the inactivation was significantly changed to 43.1 ± 10.1 and 49.9 ± 8.2%, respectively. Increasing the buffer capacity of the internal solution with 10 mM EDTA or BAPTA, the inactivation was 87.2 ± 3.6 and 63.8 ± 8.2%, respectively. To further characterize whether N-type VGCC can be modulated by other calcium-binding proteins homologous to CaM, calneuron I (CalnI) was co-expressed. Our results show that CalnI and mutants without Ca2+ binding ability have an inhibitory effect on N-type VGCC, the current density was decreased from -110.1 ± 29.9 to -4.9 ± 5.0 and -3.8 ± 2.3 pA/pF, respectively. In contrast, the mutant without C terminal transmembrane domain inhibited the current to -33.1 ± 7.5 pA/pF. These results revealed the differential roles of various Ca2+ binding proteins in modulating the channel activities.誌謝 i要 ii文摘要 iii. 緒論 1.1鈣離子之重要性 1.2電壓依賴性鈣離子通道 1.3 N型電壓依賴性鈣離子通道 2.4鈣離子依賴性不活化CDI（Ca2+ dependent inactivation） 3.5 Gβγ電壓依賴性抑制作用（voltage dependent of Gβγ inhibition） 3.6鈣離子結合蛋白 4.7神經鈣離子結合蛋白家族與電壓依賴性鈣離子通道的調控 5.8 Calneuron 6. 實驗目標 7. 材料與方法 8.1化學藥品 8.2溶液 9.3細胞培養 11.4分子生物技術 11.5電生理紀錄 （Electrophysiology） 15.6結果分析 16. 結果 17.1 N型鈣離子通道的電流-電位關係 17.2鈣調素調控N型鈣離子通道的CDI 17.3 N及C端EF hands對CDI有類似貢獻 18.4 CDI是來自廣泛性（Global）鈣離子上升 20.5模擬神經細胞在高頻刺激下鈣調素調控N型鈣離子通道的CDI機制 21.6在高頻刺激下的CDI是來自廣泛性鈣離子 22.7鈣調素N端及C端EF hands突變株影響N型鈣離子通道啟動機制 23.8 N型鈣離子通道與鈣調素在HEK293T中的分佈 24.9 Calneuron I屬於神經專一性蛋白與神經發育有關 24.10 Calneuron I 抑制N型鈣離子通道電流 25.11 Calneuron I 抑制N型鈣離子通道電流機制不需鈣離子參與 26.12 Calneuron I 的C端疏水性影響其表現位置與功能 27.13 Calneuron I與N型鈣離子通道在HEK293T中分佈 28.14 Calneuron I與N型鈣離子通道在牛腎上腺嗜鉻細胞中分佈 28.15 Calneuron I與CaMKII在HEK293T中分佈 29. 討論 30.1鈣調素調控鈣離子通道家族的CDI 30.2鈣調素空間選擇性的生理調控 31.3鈣調素調控N型鈣離子通道CDI的生理意義 32.4 Calneuron I 對N型鈣離子通道的調控 33.5 Calneuron I與N型鈣離子通道在細胞中分佈 34.6 Calneuron I與CaMKII的作用 34.7 Calneuron I 對N型鈣離子通道的調控及生理意義 35. 參考文獻 37. 表 47. 圖解 51. 圖 5
Effect of TiO2 Nanoparticles on the Improved Surface-Enhanced Raman Scattering of Polypyrrole Deposited on Roughened Gold Substrates
No full text
- …
