1,721,006 research outputs found
A regenerative semi-dynamic frequency divider for mode-1 MB-OFDM UWB hopping carrier generation
No full text
The Constitutionality of Euthanasia
No full text本文主要想要探討的是人在什麼情況下可以自己決定放棄生命，不論是消極地放棄醫療程序，或是積極地尋求醫師協助。而本文所持的論點是：只要一個人係屬於末期病患，或是正處於某種醫療上不可治癒的狀態(例如終生癱瘓或阿茲海默症)中，在經過醫師充分告知所有相關的醫療程序後，在尚有行為能力時經深思熟慮後所作成的決定，都應予以尊重。
本文分別從自由權以及平等權的角度討論自願消極安樂死與自願積極安樂死的爭議，反對安樂死者提出了諸多論述，主要例如病患的最佳利益、生命神聖、醫療程序性質之差異、滑坡理論、權利內涵、雙重效果、作為與不作為之道德上差異、外溢效果……等，然而本文認為，上述這些論述都不足以構成禁止安樂死的理由，在病患最佳利益部份，本文認為當處於本文所提及之安樂死脈絡中，也就是病患處於末期或任何不可治癒的狀態時，沒有誰可以宣稱他們比病患更了解什麼才符合病患的最佳利益；在生命神聖的論述方面，除了這是一個過於宗教性的觀點而國家應該盡力維持宗教中立以外，對生命神聖的世俗性理解也使得這種論述同樣可用來支持安樂死的決定；醫療程序性質之差異則被本文認為是一種結果論式的區分，不但無法成為支持禁止安樂死的論述，更與生命神聖的宗教性觀點自相矛盾；普遍存在於許多道德倫理議題中的滑坡理論，本質上係基於「防微杜漸」的心態，為恐未來發生難以容忍的情形(例如種族清算)而反對安樂死，並未根本地對系爭問題的可否提出說理；至於安樂死議題所涉及之生命自主權(死亡權)是否為我國憲法所保障，本文則認為此種權利涉及生命權的拋棄，此種不繼續行使生命權之自由當然為憲法第15條所涵蓋，不但國家的保護義務功能不得強迫身為權利主體的人民接受，且為了避免已經無力自行結束生命的病患(例如癱瘓者)必須以絕食等不人道手段自行結束生命，或產生不平等之差別待遇，本文認為國家不得禁止有意願執行安樂死之醫師協助病患自殺；本文認為當醫師在行為前已經預見到病患死亡的結果，而在行為後也確實造成病人死亡之結果時，法律定性上的作為或不作為，以及所謂的「主要目的」究竟是什麼，並沒有任何道德上的差異，當然也不因此而有憲法容許與否的差異；本文承認根據荷蘭經驗的不同解讀，確實會有某些所不願見到之外溢效果產生，然而本文認為透過制度的改善將可期待此一問題的減輕，而且若僅因外溢效果的產生來否認安樂死的必要性，無疑是刻意漠視尋求安樂死之病患所享有之憲法上權利及身心所經歷的劇烈痛苦。
綜上所述，本文主張所有末期病患、罹患不可治癒疾病或癱瘓之病患，都有權利自行決定是否尋求安樂死，不論該手段是消極的拒絕醫療措施，或是積極的尋求醫師協助其自殺，國家不得完全禁止有意願之醫師在透過一定程序確認病患業已充分理解其病情及現有醫療手段，並確認病患的意願、精神狀態及行為能力等涉及同意之真摯性的相關條件後，為其施行安樂死。第一章、緒論 7
第一節、研究動機與立場 7
第二節、研究方法與研究範圍 9
第三節、相關用語定義與文獻回顧 11
第一項、安樂死之分類 11
第二項、安樂死與其他類似概念之區別 15
第一款、死亡的定義 15
第二款、安寧緩和醫療 16
第三款、尊嚴死 18
第四款、醫助自殺 19
第三項、安樂死在我國所遇到的法律上限制 20
第二章、安樂死的憲法上爭議 23
第一節、安樂死在我國司法實務、學說上之處境 23
第一項、實務見解 24
第一款、法院判決 24
第二款、大法官解釋 26
第二項、學說立場 30
第一款、對於自願消極安樂死之立場 31
第二款、對於間接安樂死之立場 33
第三款、對於自願積極安樂死之立場 34
第四款、對於無意願安樂死之立場 35
第五款、生命自主權(死亡權)的憲法上座標 36
第二節、安樂死在憲法上的主要爭點 38
第三節、小結 42
第三章、美國重要司法判決介紹 45
第一節、三個重要的判決 45
第一項、涉及自願消極安樂死之判決：Cruzan v. Missouri (1990) 45
第一款、事實與爭點 45
第二款、判決結果與判決理由 47
第三款、協同與不同意見書 49
第一目、O’Connor大法官的協同意見書 50
第二目、Scalia大法官的協同意見書 51
第三目、Brennan大法官的不同意見書 52
第四目、Stevens大法官的不同意見書 57
第二項、涉及自願積極安樂死之判決：Washington v. Glucksberg (1997) 60
第一款、事實與爭點 61
第二款、判決結果與判決理由 62
第三款、協同與不同意見書 66
第一目、Souter大法官的協同意見書 66
第二目、O’Conner大法官的協同意見書 69
第三目、Stevens大法官的協同意見書 69
第四目、Ginsburg大法官的協同意見書 72
第五目、Breyer大法官的協同意見書 72
第三項、涉及平等權論述之安樂死判決：Vacco v. Quill (1997) 73
第一款、事實與爭點 73
第二款、判決結果與判決理由 74
第三款、協同與不同意見書 76
第二節、最新發展 76
第一項、Alberto R. Gonzales v. Oregon (2006) 77
第一款、事實與爭點 77
第二款、判決結果與判決理由 78
第三款、協同與不同意見書 81
第一目、Scalia大法官的不同意見書 81
第二目、Thomas大法官的不同意見書 84
第二項、Robert Schindler and Mary Schindler v. Michael Schiavo (2001) 85
第一款、事實與爭點 85
第二款、判決結果與判決理由 87
第三節、小結 87
第四章、國家管制安樂死之正當性？ 91
第一節、 自願消極安樂死是否應予容許？ 92
第一項、病人的最佳利益 93
第一款、自願消極安樂死將侵害病人最佳利益 93
第二款、自願消極安樂死將保障病人最佳利益 94
第二項、政府獨立於病患最佳利益以外之目的—生命神聖 95
第一款、安樂死是對於生命神聖的褻瀆 95
第二款、安樂死是對於生命神聖的尊重 96
第三項、區分醫療程序與否 100
第一款、區分普通醫療程序與特殊醫療程序 100
第二款、不區分普通醫療程序與特殊醫療程序 101
第四項、滑坡理論 101
第一款、贊成滑坡理論 102
第二款、反對滑坡理論 103
第二節、自願積極安樂死是否應予容許 103
第一項、解釋方法論的歧異 105
第一款、歷史途徑(historical approach) 105
第二款、整全性的途徑(integrity approach) 110
第三款、司法極簡主義(Judicial Minimalism) 111
第二項、自主權之範圍 113
第一款、自主權之範圍不及於尋求醫師協助自殺 113
第二款、自主權之範圍及於尋求醫師協助自殺 114
第三項、功利主義的觀點 117
第一款、贊成立場 117
第二款、反對立場 119
第四項、外溢效果(spillover effect) 122
第一款、主張將因此產生嚴重的外溢效果 122
第二款、否認將因此產生嚴重的外溢效果 124
第五項、作為與不作為是否有道德上差異 125
第一款、兩者無道德上之差異 125
第二款、兩者有道德上之差異 126
第六項、雙重效果理論(doctrine of double effect) 128
第一款、主張雙重效果理論 128
第二款、反對雙重效果理論 129
第七項、荷蘭經驗的影響 133
第一款、荷蘭經驗顯示開放醫師協助自殺將會造成失控 133
第二款、荷蘭經驗顯示開放醫師協助自殺並不會造成失控 135
第八項、醫師是否有義務為病患實施安樂死 136
第一款、醫師無義務遵從病患之請求 136
第二款、醫師有義務遵從病患之請求 136
第三節、意志表達前後不一之情況 137
第一項、應遵從失智後之自主權實踐 138
第二項、應遵從失智前之自主權實踐 145
第四節、涉及平等權的安樂死論述 148
第一項、區分自願消極安樂死與自願積極安樂死並無侵害平等權 148
第二項、區分自願消極安樂死與自願積極安樂死侵害平等權 149
第五章、本文立場 150
第一節、逐漸為國人所接受的自願消極安樂死 151
第一項、生命權與死亡權的憲法上基礎 151
第一款、生命權 152
第二款、死亡權 157
第二項、消極安樂死自屬合憲 158
第二節、自願積極安樂死應屬合憲 161
第一項、自由權的論述 161
第二項、平等權的論述 168
第三節、意志表達前後不一的安樂死爭議 169
第四節、幾點立法建議 171
第六章、結論 174
參考文獻 17
Database Marketing in the Mutual Fund Portfolio-An Empirical Analysis of Timing and Selection Ability and in Consistency
No full text投資人投資共同基金的目的，是藉重共同基金專業經理人管理及運作之下，可以使資金持續成長，並將增加的收益分享給所有的投資者。先前的文獻中，諸多仍著墨於以基金績效評估指標的探討，期望能夠提出某種結論能協助投資決策。但是過去的研究忽略了最重要的一點，基金是種人為操作的金融投資工具，對於個別投資人行為的異質性及動態性，做深入探討的仍然不多。因此本研究將引用財務領域中，有關投資者的擇時擇股能力，結合資料庫行銷來探討網路下單投資人行為的異質性與動態性，以區隔出本研究的線上投資人，並進一步建立共同基金之最適投資組合。
研究發現，經由擇時擇股能力模式分析，使用兩種挑選準則所挑選出的投資人，探究其未來選股策略形成的模擬基金。可以發現歷經總統大選以及全球性股災的影響，所有基金的績效走勢震盪幅度皆較以往的績效表現劇烈，而以模擬基金績效走勢震盪幅度最小。受到空頭市場的大環境影響，投資人的擇股能力也受到影響，但觀察基金的抗跌性，兩支模擬基金在研究期間當中，其績效表現可以算是相對上表現較好，證實利用擇時擇股模式結合資料庫行銷分析得到的模擬基金績效表現確實相對上比較好。The purpose of investing in the mutual fund is to gain excess profit sharing which was achieved by the professional mutual fund manager's management. Many previous studies about the mutual fund emphasized the evaluation of the mutual fund's performance indexes. They hoped they could assist in marking an investment decision. The most important point is that the mutual fund is an artificial investment tool, but it was ignored in the past researches. The overall evaluation is usually stressed in the profit research of the general finance area, but the individual investor's heterogeneity is ignored in research. Therefore, the research uses the timing and selection ability of investment decision and combines the database-marketing to investigate the online investors' heterogeneity for the segmentation of the online investors and the making the best investment portfolio.
My sample result shows the smallest vibration within all mutual funds during the President election and the disaster in the global stock market. In part, because the model which I employed timing and selection ability model. Under the influence of bear stock market, I observe the anti-fallen ability pattern, and the two mutual funds have the better performance during the research period. I prove that the imitated mutual funds have the better performance by using the timing and selection ability model and database marketing.謝辭
論文摘要
Abstract
目次 .................................................i
圖次 ...............................................iii
表次 .................................................v
第一章 緒論 ........................................1
1.1 研究背景 ........................................1
1.2 研究動機 ........................................2
1.3 研究目的 ........................................4
1.4 論文架構 ........................................4
第二章 文獻探討 ........................................7
2.1 關係行銷 ........................................7
2.2 資料庫行銷 .....................................11
2.3 共同基金與投資績效評估 .........................17
2.4 網路下單介紹 ...................................24
2.5 網路券商未來展望 ...............................28
第三章 研究方法 .......................................31
3.1 研究架構 .......................................31
3.2 資料描述 .......................................33
3.3 線上投資人擇時擇股能力分析 .....................35
3.4 模擬基金之投資報酬率求取過程 ...................38
第四章 實證分析 .......................................43
4.1 投資人基本資料分析 .............................43
4.2 擇股能力與穩定性表現分析 .......................48
4.3 擇時擇股能力與穩定性表現分析 ...................56
4.4 基金投資績效評比 ...............................59
第五章 結論與建議 .....................................67
5.1 研究發現 .......................................67
5.2 策略建議 .......................................68
5.3 研究限制 .......................................70
5.4 後續發展與建議 .................................71
參考文獻 ................................................73
中文部分 ................................................73
英文部分 ................................................74
網站部分 ................................................76
附錄 ................................................79
擇股能力與穩定性表現各時段區隔圖 .......................,7
Characterization and Improvement in Reliability and Sensitivity of Metal-Oxide-Semiconductor Devices with Ultrathin High-k Dielectrics
No full textWith the aggressive downscaling of MOS devices in semiconductor industry, the high-k gate dielectrics continuously play significant roles to achieve small equivalent oxide thickness for high-performance logic technology. The low manufacturing cost and low-temperature process of high-k dielectrics are also of practical interests for display and solar cell industry. In this dissertation, the Al2O3 MOS devices using room-temperature sputtering followed HNO3 compensation technique were demonstrated. After HNO3 compensation, the surface roughness, interface trap density, flatband voltage, and leakage current would also be effectively improved. The better reliability performance was also observed in dielectric breakdown tests and ten-year lifetime projections. Moreover, the positive bias current of Al2O3 MOS devices without HNO3 compensation showed the irregular temperature response at temperature above 70 ℃, which is corresponding to Frenkel-Poole emission. In contrast, the generation-recombination current is the dominant component for the Al2O3 MOS devices with HNO3 compensation. Using the temperature-sensitive current characteristics, we successfully demonstrated the Al2O3 MOS tunneling temperature sensors with enhanced temperature sensitivity and improved power consumption in comparison with SiO2 and HfO2 sensors. Subsequently, the electrical nonuniformity of ultrathin SiO2 and HfO2 gate dielectrics was investigated. The effective uniform area ratio regarded as an indication of gate oxide quality can be extracted from the deep depletion of C-V characteristics. In our cases, the effective uniform area ratio increases with SiO2 thickness, whereas decreases with increasing equivalent oxide thickness of HfO2, which was also reconfirmed by the same trend of leakage current fluctuations and the constant field stress measurements. Furthermore, a particular edge-dependent inversion current behavior resulting from edge fringing effect was observed for MOS tunneling diodes. The inversion current would increase with increasing tooth spacing for comb-shaped MOS tunneling diodes. The results suggested that the current conduction would be controlled by the electron diffusion current between the teeth and hole tunneling current affected by Schottky barrier height lowering. Finally, the photosensitivity can be improved by reducing SiO2 thickness and selecting smaller tooth spacing for SiO2 comb-shaped MOS tunneling photodiodes. In addition, the HfO2 photodiodes demonstrated high and steady photosensitivity owing to the current conduction dominated by electron only and smaller conduction band offset. In appendix of this dissertation, the electrical transport and photoconductive characteristics of CdTe nanowire transistors were investigated, which cooperated with the NANI group in University of Southern California. The Sb doped CdTe nanowire transistors exhibited p-type conductivity. Two acceptor levels existing in energy bandgap of CdTe nanowire were found via low-temperature electrical measurements, which is exactly in agreement with the photoluminescence measurement results. In addition, the Sb doped CdTe nanowire transistors demonstrated significant photoresponse to visible-near-infrared irradiation.Contents
Abstract (Chinese) I
Abstract (English) III
Contents V
List of Figure Captions XI
List of Table Captions XIX
Chapter 1 Introduction
1-1 Motivation 1
1-2 High-k Gate Dielectrics 5
1-3 Interface Issues in Advanced MOS Devices 7
1-4 Gate Oxide Reliability of MOS Devices 8
1-5 MOS Tunneling Temperature Sensors 9
1-6 MOS Tunneling Photodiodes 10
1-7 Thesis Overview 11
Chapter 2 Improvement in Physical and Electrical Characteristics of Low-Temperature Processing Al2O3 High-k Dielectrics Utilizing Nitric Acid Compensation Method
2-1 Introduction 17
2-2 Experimental Details 19
2-2-1 Fabrication of Al2O3 MOS Capacitors 19
2-2-2 Measurement Details 21
2-3 Physical Properties of Al2O3 High-k Dielectrics 21
2-3-1 Surface Topography of Al2O3 High-k Dielectrics 21
2-3-2 Microstructure and Elemental Analysis of Al2O3 MOS Capacitors 22
2-4 Electrical Properties of Al2O3 MOS Capacitors 23
2-4-1 Capacitance-Voltage Characteristics 23
2-4-2 Interface Properties 25
2-4-3 Current-Voltage Characteristics 26
2-4-4 Comprehensive Discussion of Electrical Characteristics 27
2-5 Summary 28
Chapter 3 Nitric Acid Compensated Al2O3 MOS Devices with Improved Negative Bias Reliability and Positive Bias Temperature Response
3-1 Introduction 41
3-2 Experimental Details 43
3-2-1 Fabrication of Al2O3 MOS Capacitors 43
3-2-2 Measurement Details 44
3-3 Comparison of Room-Temperature Reliability Performance for Al2O3 MOS Devices without and with Nitric Acid Compensation 44
3-3-1 Time-Zero Dielectric Breakdown Measurements 44
3-3-2 Time-Dependent Dielectric Breakdown CVS Measurements 46
3-3-3 Time-Dependent Dielectric Breakdown CCS Measurements 48
3-3-4 Illustration of Dielectric Breakdown Mechanism 50
3-4 Temperature-Dependent Negative Bias Reliability Analysis 52
3-4-1 Temperature-Dependent CVS Measurements 52
3-4-2 Ten-Year Lifetime Projection 53
3-5 Improvement of Positive Bias Temperature Response 54
3-5-1 Temperature-Dependent Current Conduction Behaviors 54
3-5-2 Fundamental Current Conduction Mechanism 55
3-5-3 Illustration of Current Instability (Higher Temperature Response) 58
3-6 Summary 61
Chapter 4 Performance Enhancement of MOS Tunneling Temperature Sensors by Employing Ultrathin Al2O3 High-k Dielectrics
4-1 Introduction 75
4-2 Experimental Details 77
4-2-1 Fabrication of MOS Tunneling Temperature Sensors 77
4-2-2 Measurement Details 79
4-3 Working Principle and Design Concept 80
4-3-1 Current Conduction Mechanism and Working Principle 80
4-3-2 Design Concept Description 82
4-4 Characterization of Al2O3 MOS Tunneling Temperature Sensors 84
4-4-1 Temperature-Sensitive Characteristics 84
4-4-2 Investigation of Dominant Current Conduction Mechanism 85
4-4-3 Cycling Reliability Performance 87
4-5 Comparison of SiO2, HfO2 and Al2O3 MOS tunneling Temperature Sensors 88
4-5-1 Enhanced Temperature Sensitivity by Employing Al2O3 Dielectrics 88
4-5-2 Saturation Voltage Improvement by Employing Al2O3 Dielectrics 89
4-5-3 Comprehensive Discussion of Three Kinds of Temperature Sensors.91
4-6 Summary 92
Chapter 5 Electrical Nonuniformity Phenomenon in Deep Depletion Capacitance-Voltage Behavior of MOS Capacitors with Ultrathin SiO2 and High-k Dielectrics
5-1 Introduction 105
5-2 Experimental Details 107
5-2-1 Fabrication of MOS Capacitors with SiO2 and HfO2 Dielectrics 107
5-2-2 Measurement Details 107
5-3 Deep Depletion Behaviors of Capacitance-Voltage Characteristics for MOS Capacitors with Ultrathin Oxides 108
5-3-1 Brief of Deep Depletion Behaviors in MOS Devices 108
5-3-2 Different Deep Depletion Behaviors of MOS Capacitors with SiO2 and HfO2 High-k dielectrics 109
5-4 Concept of Local Depletion Capacitance and Effective Uniform Area Ratio
5-4-1 Concept of Local Depletion Capacitance 110
5-4-2 Concept of Effective Uniform Area Ratio 112
5-5 Investigation of Electrical Nonuniformity in Ultrathin SiO2 and HfO2 High-k Dielectrics 116
5-5-1 Comparison of Electrical Nonuniformity in Ultrathin SiO2 and HfO2 High-k Dielectrics 116
5-5-2 Connection between Leakage Current and Electrical Nonuniformity 117
5-5-3 Relationship between Reliability and Electrical Nonuniformity 118
5-6 Summary 119
Chapter 6 Investigation on Edge Fringing Effect and Oxide Thickness Dependence of Inversion Current in MOS Tunneling Diodes with Comb-Shaped Electrodes
6-1 Introduction 131
6-2 Experimental and Design Concept of Electrode Patterns 134
6-2-1 Experimental and Measurement Details 134
6-2-2 Parameters of Square and Comb-Shaped Electrodes 135
6-3 Edge-Dependent Inversion Tunneling Current Behavior 136
6-3-1 Edge-Dependent Current-Voltage Characteristics 136
6-3-2 Current Conduction Mechanism and Device Simulation 137
6-4 Characteristics of MOS Tunneling Photodiodes with Ultrathin SiO2 and HfO2 High-k Dielectrics 141
6-4-1 Thickness-Dependent Inversion Current of SiO2 MOS tunneling diodes 141
6-4-2 Comparison of Inversion Current Photoresponse for MOS Tunneling Photodiodes with Ultrathin SiO2 and HfO2 High-k Dielectrics 142
6-5 Summary 144
Chapter 7 Conclusion and Perspective
7-1 Conclusion 157
7-2 Perspective and Future Work 160
Appendix Antimony Doped Cadmium Telluride Semiconductor Nanowires: Synthesis, Characterization and Application
A-1 Introduction 163
A-2 Experimental Details 165
A-3 Morphologies and Structure Characterization 167
A-4 Electrical Transport and Photoluminescence Characteristics 168
A-5 Photodetector Performance 173
A-6 Summary 175
References 191
Publication List 21
Regenerative Frequency Synthesis for UWB Application
No full text無線通訊的蓬勃發展帶來了人們對於傳輸速率的極大需求，傳統上使用改善信號雜訊比的方式來增加傳輸通到容量已出現瓶頸，新世代的無線通訊系統開始探討如何以增加傳輸頻寬的方式來達到容量的增加。以寬頻的方式做為無線傳輸可能需要多個載波以根據不同的通道特性機動性的調整載波頻率，則傳收機必須快速的切換內部載波產生機制，以選擇所採用的通道。本論文以多頻帶正交分頻多工之超寬頻無線通訊系統作為參考的系統，討論快速頻率切換合成的電路架構。
為達到寬頻的直接頻率合成，文中討論了除頻器電路的非線性操作模式，並且提出了新的半動態除頻器電路，其乃基於再生式調變機制，自一周期性輸入信號萃取出分數頻率成分。其中所構成的電路單元，包括單邊帶混頻器、電流模式邏輯架構之除頻器，其所操作的原理將以新提出的非線性觀點進行分析探討。電流模式邏輯架構之除頻器以狀態空間原理分析，歸納出其具有兩種除頻的操作模式，分別是注入式鎖頻及靜態除頻，此兩種模式將根據系統方程式的特徵值做區分與討論。
此所提出的再生式除頻器架構將應用在直接降頻接收機的載波頻率合成器中使用，其乃採用直接頻率合成方式，以單邊帶混頻器將一個基本頻率移轉一個頻率位移量至所需要的頻率上。在多頻帶正交分頻多工之超寬頻無線通訊系統第一操作模式下，提出了以中間頻帶載波，用3.96GHz為基本頻率方式，以0.18微米的1P6M CMOS製程實現一頻率合成器，此電路達-15dBc的邊帶干擾信號，其使用1.8V的電壓供應，消耗9mA的電流。此外亦提出另一個合成器，以最高頻帶載波，用4.488GHz為基本頻率方式，以次諧波混頻器方式產生直接頻率合成以降低電路之操作頻率，此電路以相同的製程實現，其達-20dBc的邊帶干擾，包含一個環狀震盪器，使用1.8V電壓供應，消耗34mW的功率。
繼而提出擴展至全部14個載波頻率的合成方式，根據該系統跳頻的方式，在一個使用時段僅於三個頻帶間跳動，故本設計提出切換式基本頻率的產生機制來執行每個頻帶群組的跳頻載波。對應於五個頻帶群組的中心載波位於3.96GHz、5.544GHz、7.128GHz、8.712GHz和10.296GHz將從內部的7.92GHz正交性震盪器合成出，並被採用來做為機動性的基本頻率，以執行直接頻率合成。其所對應的電路將適時的打開與關閉，以節省不必要的電流浪費。此頻率的規劃遇到三階諧波干擾的作用，將會在頻率移轉的過程中產生干擾信號。因此將提出有效解決的諧波濾除單邊帶混頻器來執行頻率移轉動作。本設計以0.13微米CMOS製程，於模擬上對於14個載波頻率生成均有-30dBc以上的干擾信號抑制。由於適時的開關內部電路原件，功率消耗可達100mW以下，並且該電路僅使用被動電感原件於震盪器電路與合成器輸出，僅需1120um乘上580um的面積。
為更進一步的降低多載波之寬頻信號接收機制的功率消耗，將提出另一個降頻方式，此乃根據兩個跳動的本地震盪信號來執行降頻的動作。第一個跳頻本地震盪信號將引出一個全新的多模態次諧波雙閘極混頻器電路架構，其所需要的多相位震盪信號將由一切換式相位內插器達成。該電路由90奈米CMOS電路完成，對於14個頻帶的降頻動作功率消耗低於100mW，由於採無電感方式，此設計僅占面積290um乘上460um。Wireless communication has been in the demand to increase the transmission data rate. Since it is difficult to increase the channel capacity through the signal-to-noise ratio, it is expected to explore new techniques to use wide bandwidth for the wireless communication. The wideband systems may require several carrier frequencies to adaptively convey the data through different channels. The transceiver has to be able to rapidly select the adopted channel with the agile carrier generation mechanism. This thesis takes the multi-band orthogonal frequency division multiple-access (MB-OFDM) ultra-wideband (UWB) system as the reference to discuss the architecture of fast switching frequency conversion.
To achieve wide frequency range direct frequency synthesis, the nonlinear circuit operation of the frequency divider circuits is discussed and the semi-dynamic frequency divider is proposed. It uses the regenerative modulation method to extract the fractional frequency from a periodic input signal. The detailed operation of the composing units, the single side-band (SSB) mixers and the current mode logic (CML) frequency dividers, are examined with the new perspectives on their nonlinear operation. The CML frequency divider is analyzed in its state space and the two operation modes, namely the injection lock and the static division, are specified according to the eigenvalues in its system equations.
With the aid of the proposed regenerative frequency divider, the carrier generation circuits have been designed for the direct conversion receiver. Using the SSB mixer to synthesize the carrier signal, the direct frequency synthesizer circuits with the center and corner base-tone mechanisms are presented for the mode-1 operation of the MB-OFDM system. The circuit based on the center base-tone at 3.96-GHz has been realized in 0.18um 1P6M CMOS technology and achieves -15dBc spurious performance. It consumes 9mA from the 1.8-V supply. The other circuit is based on the corner base-tone at 4.488-GHz and takes subharmonic mixer for the carrier generation in order to lower the circuits' operating frequencies. It achieves -20dBc spurs and consumes 34mW, including a ring oscillator and the buffer, from the 1.8-V supply using the same technology.
The extension to the design for all-band 14 carrier generation has been proposed. According to the frequency hopping mechanism that uses three sub-bands at a time, the base-tone generation for the direct frequency synthesizer is designed to retrieve the base-tone frequencies at 3.96-GHz, 5.544-GHz, 7.128-GHz, 8.712-GHz and 10.296-GHz from the 7.92-GHz quadrature voltage controlled oscillator (QVCO) and adaptively switch on and off the circuit blocks in order to achieve low power consumption. It is observed that the third harmonic components from the large input deviations cause more spurious signals than the image effect in the frequency translation process. The harmonic rejection single side-band mixer architecture is proposed to suppress this effect. In 0.13um CMOS realization, the simulation results show that the synthesizer achieves -30dBc spurious response in the 14 modes of carrier generation. The power consumption is less than 100mW for the switching mechanism inside the circuit blocks. The circuit only uses the on-chip inductors for the oscillator core and the hopping carrier output. It takes 1120um x 580um chip area to accommodate the whole frequency processing units.
To further reduce the power consumption in the reception mechanism for wideband signals with multiple carriers over wide frequency range, another method to perform the down-conversion is proposed. It uses two hopping local oscillation signals to perform the frequency conversion. The first hopping local oscillation signal explores the harmonically related frequency steps while the second hopping local oscillation signal is derived from the oscillator through a nested regeneration loop. The first downconversion uses the proposed multi-subharmonicity dual-gate mixer to perform a multi-harmonic frequency down conversion. The switched phase interpolator is built to supply the multiphase LO signals for the multi-mode operation. The simulated performance shows that the circuit in 90nm CMOS technology performs the 14-band frequency conversion using one oscillation frequency with the power consumption less than 100mW. The inductorless design achieves 290um x 460um area.1 Introduction 1
1.1 Wide-band Wireless Communication . . . . . . . . . . . . . . . . . . . . . . 2
1.2 Frequency Synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Multiband OFDM UWB System and Front-End Circuits 9
2.1 Radio Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.2 Downconversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2.1 DC Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.2.2 Dynamic Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.3 Carrier Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3 Regenerative Modulation Frequency Divider 19
3.1 Miller Divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.2 Single-Sideband Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.1 Gilbert Cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.2 SSB in the Regenerative Loop . . . . . . . . . . . . . . . . . . . . . . 24
3.3 Semi-Dynamic Frequency Divider . . . . . . . . . . . . . . . . . . . . . . . . 31
3.3.1 Phase Misalignment in the SSB Mixer . . . . . . . . . . . . . . . . . 31
3.3.2 I/Q Mismatch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.4 CML Divider Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
4 Mode-1 Direct Frequency Synthesizer 45
4.1 Direct Frequency Synthesis for Mode-1 UWB DCR . . . . . . . . . . . . . . 46
4.1.1 Non-SSB Mixer Based DFS . . . . . . . . . . . . . . . . . . . . . . . 46
4.1.2 SSB Mixer Based DFS . . . . . . . . . . . . . . . . . . . . . . . . . . 48
4.2 Centered Base-tone for Mode-1 MB-OFDM UWB . . . . . . . . . . . . . . . 53
4.2.1 Divide-by-7.5 Frequency Divider . . . . . . . . . . . . . . . . . . . . . 53
4.2.2 Hopping Carrier Generator . . . . . . . . . . . . . . . . . . . . . . . . 58
4.2.3 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4.3 Corner Base-tone for Mode-1 MB-OFDM UWB . . . . . . . . . . . . . . . . 64
4.3.1 Frequency Generation . . . . . . . . . . . . . . . . . . . . . . . . . . 65
4.3.2 Subharmonic Operation . . . . . . . . . . . . . . . . . . . . . . . . . 66
4.3.3 Subharmonic Hopping Carrier Generator . . . . . . . . . . . . . . . . 72
4.3.4 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5 Switched Base-tone for All-Band MB-OFDM UWB 79
5.1 Frequency Planning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
5.1.1 Regenerative Dividers for the Oscillation at 30× 264-MHz . . . . . . 82
5.1.2 All-Band Frequency Synthesizer Architecture . . . . . . . . . . . . . 84
5.2 Third-order Harmonic Rejection . . . . . . . . . . . . . . . . . . . . . . . . . 85
5.2.1 Image Effect versus Harmonic Effect . . . . . . . . . . . . . . . . . . 85
5.2.2 Harmonic-and-Image Rejection SSB Mixer . . . . . . . . . . . . . . . 88
5.3 Multiplexing the Deviation Signals . . . . . . . . . . . . . . . . . . . . . . . 90
5.3.1 Switched Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
5.3.2 Switched Octave-Phase CML Divider . . . . . . . . . . . . . . . . . . 90
5.3.3 MUXs with Switched Active Inductive Load . . . . . . . . . . . . . . 91
5.4 Hopping Carrier Generator . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
5.5 Simulation Result . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6 Dual-Hop Double Conversion Receiver 99
6.1 Band Division and Nested Regeneration Loop . . . . . . . . . . . . . . . . . 100
6.2 Dynamically Subharmonic Mixing . . . . . . . . . . . . . . . . . . . . . . . . 103
6.2.1 Multi-Subharmonic Mode Dual-Gate Mixer . . . . . . . . . . . . . . 104
6.2.2 Switched Phase Interpolation . . . . . . . . . . . . . . . . . . . . . . 108
6.3 Circuit Realization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
6.3.1 Simulation Result . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
6.3.2 Experimental Result . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
7 Conclusion 12
Signal Transduction Pathways Construction and Visualization by the TRANSPATH Database
No full text於系統生物學中，信息傳導路徑提供了大量重要資訊，並且說明了信號分子之間的交互作用關係。藉由多條相關信息傳導路徑，可再進一步組成一關聯網路架構圖，此網路關聯圖可提供全面且具體的架構，並可呈現各信息傳導路徑間的因果關係。如能即時、準確地提供生醫領域研究人員具體的網路關聯圖，將可幫助研究人員快速彙整大量相關資訊，並可讓研究人員從圖中迅速獲得具體觀念架構，如此將能節省研究人員大量時間，更可增加其研究效率，因此迅速且準確地提供關聯架構圖是非常重要的議題。
綜合以上之論點，本研究主要目的為提供生醫領域研究人員具體且完善的信息傳導路徑圖。本研究以BIOBASE TRANSPATH資料庫為資料來源依據，先應用廣度優先搜尋演算法(Breadth-First Search Algorithm)的概念建立出相關路徑的樹狀資料結構，再利用出現於相同路徑上的概念，將兩兩分子元素之路徑建構出(Pathways Construction)並且應用最短路徑演算法(Dijkstra''s Algorithm)的概念找出最短路徑，最後利用Adobe Flex開發工具，提供找出之相關資訊視覺上的呈現，繪出相關網路關聯圖。本研究參考目前KEGG繪製的VEGF Signaling Pathway，並證實所繪出的網路關聯圖具有一定程度上的完整性與可用性，並能加以輔助研究人員於其相關研究之應用。Signal transduction pathways provide a lot of important information in systems biology, which identify the functional relationships among molecular components, such as gene, gene product and protein. Furthermore, we can form the biological network by multiple pathways, which provide comprehensive concepts of biological process and reveals the complex causation. However, if we can provide researchers with related networks immediately, we can also assist them to retrieve knowledge effectively and obtain the concrete concept from the biological network. It will save researchers a lot of time and improve their efficiency. Therefore, to provide the biological network rapidly and properly is an important issue.
Based on the above arguments, the main purpose of this thesis is to provide researchers in the biomedical field with signal transduction pathways networks concretely and comprehensively. In this research, the data source comes from the BIOBASE TRANSPATH database. First of all, we apply Breadth-First Search algorithm to construct the tree data structure and we construct the pathway by the concept of two molecules in the same path. After constructing the pathways, we apply Dijkstra’s algorithm to find the shortest path, and finally Adobe Flex Development Tools is used to design visualization of the graphical user interface. This graphical user interface is used to integrate related information and provide visualization of biological networks. In this thesis, we compare the network of VEGF signaling pathway constructed by our methods to the network by KEGG, and we prove that the network constructed by our methods has a certain degree of integrity and usability
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