9,812 research outputs found
TACC3-ch-TOG track the growing tips of microtubules independently of clathrin and Aurora-A phosphorylation
Full text linkThe interaction between TACC3 (transforming acidic coiled coil protein 3) and the microtubule polymerase ch-TOG (colonic, hepatic tumor overexpressed gene) is evolutionarily conserved. Loading of TACC3–ch-TOG onto spindle microtubules requires the phosphorylation of TACC3 by Aurora-A kinase and the subsequent interaction of TACC3 with clathrin to form a microtubule binding surface. Whether there is a pool of TACC3–ch-TOG that is independent of clathrin in human cells, and what is the function of this pool, are open questions. Here, we report that TACC3 is recruited to the plus-ends of microtubules by its association with ch-TOG and that this pool is independent of phosphorylation and binding to clathrin. The plus-end binding of TACC3–ch-TOG persists in interphase and we propose that one cellular function of TACC3–ch-TOG is to modulate cell migration. We also describe the distinct subcellular pools of TACC3, ch-TOG and clathrin. TACC3 is often described as a centrosomal protein, but we show that there is no significant population of TACC3 at centrosomes. The delineation of distinct protein pools reveals a simplified view of how these proteins are organized and controlled by post-translational modification
Relatedness structure and individual identification in a semi-fossorial shrew (Soricidae: Anourosorex squamipes) using microsatellite markers.
No full textResults and predictability of fat-removal orbital decompression for disfiguring graves exophthalmos in an Asian patient population.
No full textInterference of neutrophil-platelet interaction by YC-1: a cGMP-dependent manner on heterotypic cell-cell interaction.
No full textfunctional evaluation and selection criteria for students educated at home in I-Lan County, Taiwan
No full textMaterial, Electrical, and Optical Characterizations of High-K Sm2TiO5 Dielectric Deposited on Polycrystalline Silicon
No full text[[abstract]]This paper examines high-k Sm2TiO5 on polycrystalline silicon film treated in different annealing conditions and fabricated as a high-k gate dielectric. Material analyses, electrical characterizations, and optical measurements were performed to assess annealing effects and find an optimal annealing temperature. Results show that annealing at a temperature of 800 degrees C effectively passivates defects such as dangling bonds and traps, and improves dielectric performance.[[note]]SC
Characterizations of ZnS/CuInS2 Film Fabricated by Electrochemical Deposition Process for Solar Cell Devices
No full text[[abstract]]In this study, CuInS2 (CIS) films were fabricated by a two-step, non-vacuum process. Electrochemical deposition (ECD) was first used to prepare Cu-In precursors on Mo substrate under constant current. Then, CuInS2 films were prepared by sulfurization of the Cu-In precursors in sulfur atmosphere. The surface morphologies, compositions, and transmittance of the CuInS2 and ZnS films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and UV-VIS, respectively. The results show that a high-quality CIS thin film solar cells by low-cost, non-vacuum process could be obtained.[[note]]SC
Suppression of CuS phases in CuInS2 electrodeposition and sulfurization with heat treatment
No full text[[abstract]]CuInS2 films are promising for future solar cell technology. However, the formation of the CuS phase during the growth of CuInS2 thin films may hinder the performance of the CuInS2-based solar cell. Therefore, the removal of the excessive CuS phase is required during fabrication of CuInS2 films. In this research, we fabricated a CuInS2 film using Cu-In electrodeposition and a sulfurization process. Electrodeposition tests were conducted in solutions of various pH values and deposition voltages to grow high-quality precursor films. Moreover, to suppress formation of the CuS phases, heat treatment was incorporated in the fabrication process. We found that an appropriate amount of sulfur powder and a suitable heat treatment temperature could suppress the CuS phases and form well-crystallized CuInS2. Improvements in film quality and removal of the CuS phase can be confirmed by X-ray diffraction scanning electron microscope imaging, and energy dispersive spectrometer measurements. High-quality film with superior crystalline structure and surface morphology was formed with sulfurization and heat treatment at 600 degrees C. (C) 2012 Elsevier B.V. All rights reserved.[[note]]SC
ELECTRO-DEPOSITED CuInSe2 FILMS FOR FLEXIBLE OPTOELECTRONIC APPLICATIONS
No full text[[abstract]]In this research, one-step electro-deposition was applied to fabricate CuInSe2 films on top of Polyethylene terephthalate (PET) substrate. Proper ion concentration ratios, suitable pH values, appropriate deposition time and current density will enhance the formation of the well-crystallized CuInSe2 film on top of the PET substrate. Compositions of the film were examined by energy dispersive spectrometer (EDS) analysis. Material properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) images, and. Atomic force spectroscopy (AFM). Experiment results indicate that plating solution with a pH value of 1.5, current density of 0.2 or 0.3 ASD, and deposition time of 15 minutes are preferable parameters for high-quality CuInSe2 film fabrication. The flexible CuInSe2 film shows great promises for future flexible solar optoelectronic devices.[[note]]SC
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