18,459 research outputs found

    Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas

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    In this study, 0.3-0.5 mu m deep and 0.3 mu m wide silicon trenches were etched using Cl-2/10%-N-2 and Cl-2/50%-HBr inductively coupled plasmas, the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. High resolution transmission electron microscopy and capacitance-voltage techniques were used to investigate the physical and electrical defects, respectively. Physical defects were found on the silicon trench surfaces etched in both Cl-2/10%-N-2 and Cl-2/50%-HBr. The most dense defects were found near the trench button edge, lesser dense defects were found at the trench bottom, and the least dense defects were found at the trench sidewall. The silicon etched in Cl-2/50%-HBr showed more physical defects compared to that etched in Cl-2/10%-N-2. Thermal oxidation of 20 nm at temperatures up to 1100 degrees C alone appears not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the defects, an annealing at temperatures higher than 1000 degrees C in N-2 for 30 min appears to be required. (C) 1999 Elsevier Science S.A. All rights reserved

    Thermodynamic equilibrium calculation of CU(s)-Cl-2(g) reaction

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    Thermodynamic calculations of the equilibrium compositions of condensed- and gaseous-reaction products from the reaction between Cu(s) and Cl-2(g) has been performed to understand the fundamental reactions during the Cl-based dry etching of Cu thin film. Total pressure was fixed at 5 mTorr, which is typical for high-density plasma etching. The final phase equilibrium state of Cu(s)-Cl-2(g) system was determined by using the minimization of the total free energy of the system as a function of temperature and initial Cl-2(g)/Cu(s) molar ratio, and the calculated phase equilibrium results were discussed in relation to the Cl-based Cu dry etch reaction. (C) 2002 Elsevier Science B.V. All rights reserved
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