1,721,135 research outputs found
Current status of EUV lithography development in Japan
No full textExtreme Ultraviolet Lithography (EUVL) is a promising candidate for the device fabrication at feature sizes of a half pitch of 32 nm and below. An EUV lithography system (Fig. 1) is composed of various subsystems, such as the source, the optics, the exposure system, a mask, and the resist. Currently various consortia, private companies, universities, and research institutes are working on the development of EUV lithography in Japan. EUVA and Selete are involved in an EUVL-related NEDO project under MIRAI Scheme. The recent activities of those projects are described in this presentation. © 2010 IEEE
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor
No full textIn this work we will apply a novel extraction procedure to characterize interfacial states and border traps in InGaAs and Ge MOSFETs. The extraction technique, which will allow profiling the defect distributions in the (E,z) dielectric bandgap, is based on the simultaneous simulation of C-V and G-V characteristic over a wide frequency range. The impact of minority carrier generation mechanisms taking place in the semiconductor will be deeply investigated, as its impact is essential when the technique is applied to direct low-bandgap semiconductors such as InGaAs and Ge. Results will confirm that the minority carrier generation has to carefully consider to avoid overestimating the extracted defect density
Discounting and the market valuation of defined benefit pensions
No full textThis is the pre-peer reviewed version of the following article: Breedon, F. and Larcher, L. (2021), Discounting and the market valuation of defined benefit pensions. Eur Financ Manag. Accepted Author Manuscript. https://doi.org/10.1111/eufm.12336, which has been published in final form at https://doi.org/10.1111/eufm.12336. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Version
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations
Full text linkRecently, a wide class of market segments (e.g., health, material science, security, and communications) is tackled by circuits fabricated in BiCMOS technology, integrating silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and passives. Currently, the reliability of SiGe HBT devices is a major concern, and much attention is given to self-heating (SH), that limits device performance and regulates their degradation during stress. Moreover, its relevance is supposed to increase with device scaling. In this paper, we explore the reliability issues of SiGe HBTs by combining dedicated experiments and TCAD simulations. We develop and calibrate a TCAD model that is then used to investigate SH effects in both operating and stress conditions. Results show the important role played by the back-end-of-line (BEOL) and by the substrate thermal resistance in dissipating the heat generated by impact ionization. The location at which defects are generated during stress and the microscopic properties of the defects are determined experimentally by means of dedicated noise measurements. Including defects in the TCAD model allows reproducing the degradation observed in stress experiments. Simulations of the SH effects on a stressed device in measurement conditions revealed the presence of a hole hot spot that suggests a possible physical mechanism involved in the degradation slowdown at long stress times reported in the literature
Multiscale modeling of neuromorphic computing: From materials to device operations
No full textIn this paper, a multiscale modeling platform for neuromorphic computing devices connecting the atomic material properties to the electrical device performances is presented. The main ingredients of the modeling platform are discussed in view of the different technologies (e.g. RRAM, PCM, FTJ) proposed for 3D integrated neuromorphic computing
Circuit model for thermoviscous propagation in annular waveguides
No full textThis paper presents a circuit model of the thermoviscous acoustic wave propagation in waveguides with annular cross section. The model, validated against finite element method simulations of the input acoustic impedance, captures the annular waveguide behavior with good accuracy within a frequency bandwidth consistent with the lumped-element approximation. The cascading of multiple circuit models easily allows extending the bandwidth while preserving the same accuracy. The circuit model was derived from the low reduced frequency (LRF) wave propagation model in rectangular layers, representing a valid approximation of the complex LRF solution in annular waveguides. The simplified analytical description allows for the formulation of a compact T-network model comprised of standard circuit elements. This circuit model can be implemented in circuit simulators to accelerate both the analysis and engineering of devices having elements with annular cross section, such as micro-electro-mechanical systems devices or microphones
A complete study of SILC effects on E2PROM reliability
No full textIn this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories
Properties of intrinsic point defects and dimers in hexagonal boron nitride
Full text linkHexagonal boron nitride (hBN) is a wide gap 2D layered material with good insulating properties. Intrinsic point defects in hBN play an important role in its applications as a dielectric in 2D electronic devices. However, the electronic properties of these defects are still poorly understood. We have calculated the structure and properties of a wide range of intrinsic point defects in the bulk of hBN using hybrid density functional theory (DFT). These include vacancies and interstitial states of B and N as well as di-and tri-vacancies. For each isolated defect, multiple charge states are calculated, and for each charge state multiple spin states are investigated. Positions of defect charge transition levels in the band gap of hBN are calculated. In particular, we predict that B vacancies are likely to be negatively charged in contact with graphene and other metals. Calculations of the interaction between vacancies predict that divacancies in both B and N sublattices are strongly binding. Moreover, the interaction of single B and N vacancies in adjacent layers induces the creation of-N-N-and-B-B-molecular bridges, which greatly distort the local structure, leading to local bond weakening. These results provide further insight into the properties of defects which can be responsible for degradation of hBN based devices
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