1,720,974 research outputs found
Moisture induced failures in flip chip on flex interconnections using anisotropic conductive adhesives
No full textIn situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates
No full textStudy of time-dependent dielectric breakdown on gate oxide capacitors at high temperature
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Accelerated ageing with in situ electrical testing: a powerful tool for the building-in approach to quality and reliability in electronics
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The dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurements
No full textThe dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurements
No full textLifetime modeling of intrinsic gate oxide breakdown at high temperature
No full textHigh resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 degrees C). It is proven that even at these high temperatures log(t(BD)) is proportional to 1/E-OX and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E-OX model). In addition it is presented that the TDDB activation energy Ea for this type of gate oxide has linear dependence on stress electric oxide field. (C) 2007 Elsevier Ltd. All rights reserved
Dynamics of electromigration induced void-hillock growth and precipitation/dissolution of addition elements studied by in-situ electron microscopy resistance measurements
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