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THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY
No full textThe effect of in situ elemental boron doping (boron concentration N-B = 1 x 10(19) to 3 X 10(20) cm(-3)) on the strain relaxation of a Si0.8Ge0.2:B/Si(001) heterostructure grown at 680 degrees C is investigated. Although boron gives rise to lattice contraction in bulk Si, it does not compensate the lattice mismatch between the Si0.8Ge0.2 layer and Si substrate. On the contrary, it stimulates the strain relaxation. The strain relaxation of the Si1-xGex:B/Si(001) heterostructure mainly gives way to dislocation half-loops generated not in the Si0.8Ge0.2 layer, but in the Si buffer layer just below it. This means that heterointerfacial quality may be one of the major control factors of strain relaxation. The strain relaxation induced by boron doping is observed even at N-B similar to 10(19) cm(-3), which is in the doping range typically used in Si1-xGex/Si heterojunction bipolar transistors (HBTs). Therefore, as well as Ge mole fraction and growth temperature, N-B should also be considered in determining critical thickness of a Si1-xGex layer grown on a Si substrate
Microbridge plasma display panel with high gas pressure
No full textA microbridge structure based on air bridge technology has been used to make plasma display panels. This microbridge structure has a 20-mu m physical gap between the bridge anode and the cathode. The Paschen's minimum for pulsed de discharges is around 900 Torr for Ne + 0.1% Ar and He + Xe gas mixtures, and moves to higher pressures with increasing xenon content. The current-voltage (I-V) characteristics have been investigated over the pressure range of 500-900 Torr. With the pressure between 700 and 900 Torr the microbridge plasma display cells operate in a normal glow discharge mode. The luminance has been measured in a display panel consisting of a microbridge discharge structure combined with an R, G, B photoluminescent phosphor plate. He + Xe mixture discharges in this microbridge plasma display have their maximum luminance at 700-900 Torr
COMPATIBILITY OF POLY(ETHYLENE 2,6-NAPHTHALATE) AND POLY(BUTYLENE 2,6-NAPHTHALATE) BLENDS
No full textBlends prepared from poly(ethylene 2,6-naphthalate) (PEN) and poly(butylene 2,6-naphthalate) (PBN) show only partial miscibility judged from their glass transition temperatures. Two distinct mechanical behaviors are observed: brittle for the blends < 20 wt% of PBN, while ductile > 20 wt% of PBN. The experimental modulus and strength values of the blends are within the predicted values according to Kleiner and Paul models, respectively. This means that PEN/PBN blends are somewhat compatible based on their tensile properties. Especially for 20 wt% of PBN blend, the high modulus and strength are observed. The viscosity of the blend is high, which may imply a somewhat entangled morphology in the amorphous state
Silicon-germanium spherical quantum dot infrared photodetectors prepared by the combination of bottom-up and top-down technologies
No full textIsolation of gE gene deleted pseudorabies virus by using a gE-specific monoclonal antibody
No full textCompatibility of Poly(ethylene 2,6-naphthalate) and Poly(butylene terephthalate) Blends
No full textBlends of poly(ethylene 2,6-naphthalate)(PEN) and poly(butylene terephthalate) (PBT) were prepared by both solution and melt methods. Any significant difference was not observed for the glass transition and melting temperatures. These blends showed a partial compatibility based on the glass transition temperatures. PEN and PBT crystallized separately to exhibit two melting temperatures. The crystallization rate of PEN in PEN-rich blends was not affected by the PVT content, while that of PVT in PVT-rich blends decreased with an increase of the PEN content. By comparing the experimental modulus and strength with those predicted from Kleiners and Pauls model, PEN/PBT blends can be described to have some compatibility throughout the compositions
THERMAL-PROPERTIES OF POLY(ETHYLENE 2,6-NAPHTHALATE) AND POLY(BUTYLENE 2,6-NAPHTHALATE) BLENDS
No full textThermal properties of poly(ethylene 2,6-naphthalate) (PEN)/poly(butylene 2.6-naphthalate) (PBN) blends were investigated by differential scanning calorimetry. Blends containing less than 60 wt% PBN showed double glass transitions, which approach mutually closer with increasing PBN content, whereas a single glass transition was observed for compositions more than 80 wt% PBN. This behavior indicates that the blends with 60 wt% PBN or less separate into two amorphous phases containing both components and the difference in composition between two phases decreases with an increase of PBN content, while a single amorphous phase is formed for compositions more than 80 wt% PBN. This result was supported by melting behavior and crystallization kinetics
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