60 research outputs found
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain
No full textFull-band Monte-Carlo simulations of short channel double-gate SOI nMOSFETs were used to assess possible enhancement of drain
current in devices featuring a conduction band offset between the source and the channel as those obtained using non-conventional
source/drain materials. We found that the coupling between carrier transport and device electrostatics tends to balance the enhancement
of charge injection provided by the band discontinuity, so that the largest contribution to the current enhancement given by alternative
S/D materials is due to the strain that they induce in the channel
Chronique Droit du contentieux de l'Union européenne - Extension de la responsabilité des membres d'une entente aux dommages causés par le umbrella pricing
No full textInternational audience(CJUE 5 juin 2014, aff. C-557/12, Kone e.a., AJDA 2014. 1651, chron. M. Aubert, E. Broussy et H. Cassagnabère ; D. 2014. 1525, note S. Carval ; AJCA 2014. 235, obs. G. Parleani
Chronique Droit du contentieux de l'Union européenne - Extension de la responsabilité des membres d'une entente aux dommages causés par le umbrella pricing
No full textInternational audience(CJUE 5 juin 2014, aff. C-557/12, Kone e.a., AJDA 2014. 1651, chron. M. Aubert, E. Broussy et H. Cassagnabère ; D. 2014. 1525, note S. Carval ; AJCA 2014. 235, obs. G. Parleani
Monte-Carlo simulation of MOSFETs with band-offsets in the source and drain
No full textInternational audienc
Assessment of anomalous behavior in hydrodynamic simulation of CMOS bulk and partially depleted SOI devices
No full textInternational audienceA thorough investigation of unphysical phenomena occurring in hydrodynamic simulation of deep-submicrometer devices has been performed using 2D numerical simulation on realistic devices. We clearly show that anomalous behaviors exist in all major commercial simulation codes and concern both partially depleted silicon-on-insulator devices (inverse kink effect) and bulk transistors (positive substrate current effect). Since sophisticated solutions, but not yet completely verified, have been recently suggested for enhancing the hydrodynamic model, we propose here a simple and extremely practical solution for assessing the unphysical effects in hydrodynamic simulation of contemporary devices
Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
No full text2nd European Workshop on Ultimate Integration of Silicon (ULIS 2001), GRENOBLE, FRANCE, JAN 18-19, 2001International audienceThe aim of this work is to investigate non-stationary transport effects occurring in 50 nm MOSFET technology and to provide guidelines for technology optimization in order to maximize the impact of these effects on device performances. We analyze quantitatively the real impact of technology on the needed level of accuracy for carrier transport modeling and we show which recipes must be used to evaluate the performances of advanced device architectures. The original point of this work is the investigation of technology influence on injection velocity at source side and on drain current. The results open the perspective of specific engineering of access regions in order to take full advantage of nonstationary effects on the drain current
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