42 research outputs found
Il primo master per coordinatori infermieristici di unità operativa o dipartimento
Questo lavoro si propone di condividere l'esperienza dell'Università degli Studi di Milano- Facoltà di Medicina e Chirurgia- in merito al Master per Coordinatori infermieristici di Unità Operativa e/o di Dipartimento, finanziati con FSE dell'A.A. 2003-2004.
Nello specifico tale articolo vuole fotografare:
- l'aspetto organizzativo: selezione per l'amissione, piano teorico formativo;
- la metodologia utilizzata, consonna all'apprendimento degli adulti;
- la qualità percepita dai discenti
Infermieristica clinica in ortopedia e traumatologia
Testo di Ortopedia e Traumatologia per la Laurea in Infermieristica, in cui si affronta una trattazione completa delle patologie ortopediche e traumatologiche che, incentrata sul paziente piuttosto che sulla patologia, permette di evidenziare chiaramente la funzione dell’assistenza infermieristica e dei principi di riabilitazione. La divisione in capitoli segue, nella prima parte del testo, un’organizzazione secondo i vari distretti corporei, riuscendo così a centrare l’attenzione sul paziente. Nella seconda parte del testo troviamo un’organizzazione più tradizionale per le patologie importanti e per i problemi assistenziali tipici della disciplina, oltre ad un capitolo dedicato alle procedure di uso più frequente. Ogni capitolo della prima parte comprende un paragrafo introduttivo sulle principali patologie del distretto corporeo trattato, per presentare poi le tipologie di pazienti affetti da esse, distinguendo tra patologie traumatiche e non. Si passa poi alle varie fasi dell’assistenza, con riferimento specifico al triage, segni e sintomi, alla diagnostica strumentale, ai trattamenti, incruenti e chirurgici, sempre evidenziando diagnosi infermieristiche e problemi collaborativi. Ogni capitolo è corredato da piani assistenziali standard e da box di approfondimento su argomenti ‘trasversali’ che interessano sia l’ambito ortopedico che quello traumatologico. Numerosi riferimenti incrociati ad altri capitoli, in particolare della parte generale, e ad un glossario, permettono di risolvere rapidamente eventuali dubbi dello studente o a rinfrescare conoscenze di base. Il testo è integrato da un ricco apparato iconografico di tabelle, disegni e fotografie
ESD in Smart Power Processes
Electrostatic Discharge (ESD) is today one of the major concern for Integrated
Circuits (IC) chip quality.
Amerasekera and Duvurry [1] have identified ESD as one of the most common
failure mode in silicon ICs: roughly 10 % of the failing parts is attributed to ESD
event.
Vinson and Liou [2] reported that roughly 20 % of the field return failures may be
attributed to ESD while Wagner et al. [3] identified ESD as being the cause of
greater than 25% of the failures encountered.
Chip redesign and complete new mask set are often required to solve ESD
weakness detected in the product development phase.
Costs associated with these values are huge, but even more difficult to measure are
the intangible costs related to delays and to the loss of customer confidence caused
by failed products.
Advanced process technologies did have a severe impact on ESD robustness: linear
dimensions (channel lengths, gate oxide thickness and junction depth) scaling in
new processes comes together with supply voltage reduction but “unfortunately”
people do not scale accordingly!
For this reason the ESD level requested is not reduced in new technologies and
many new applications, made possible by advanced IC processes, require even
increased ESD performances.
Furthermore advanced technologies allow designers to realize very complex
system on chip (SOC) with very large pin counts. The bonding pad pitch has to
scale properly and the total area available for ESD protection circuit is going to
become smaller and smaller
Optimization of ESD protection structures suitable for BCD6 smart power technology
In this work we present results concerning the optimization of BCD6 ESD protection structures based on the lateral
DMOS transistor to be used in ESD protection structures adopting the “Big-Clamp” approach. The influence of
common lines parasitic resistance on ESD robustness has been characterized, both by means of TLP measurements
and HBM testing. Threshold voltage shift in NMOS input buffer transistor, following HBM test, has been detected,
suggesting a new failure criteria that should be taken into account for these protection structures. Simple gate-coupled
LDMOS devices with different N-well doping has also been investigated with the aim to identify the effect of the
well doping on the ESD robustness
ESD protection structures for BCD5 smart power technologies
In this work we present new ESD protections structures, compatible with the in BCD5 smart power technology,
based on an optimization of the “Big-Clamp” approach. By adopting dedicated Vdd and Vss ESD rails and by
replacing the standard diodes with two BJTs, adequately connected to the Vdd and Vss ESD rails, we have obtained
ESD robustness in excess of 8KV HBM for 5V supply voltage structures. By adopting a suitable “Darlington”-
LDMOS we have obtained 7 kV and 4 kV HBM threshold for ESD protection structures suitable for 20 V and 40
V supply voltages respectively
Overstress and Electrostatic Discharge in CMOS and BCD Integrated Circuits
The ESD qualification of the new technologies is obtained by testing different device structures an comparing the ESD robustness evaluated by means of different testing methods (HBM, MM, CDM and TLP). The influence of the layout parameters on the ESD robustness must also be characterized. In this paper we will present data concerning the ESD robustness of both 0.35 μm CMOS and 0.6 μm smart power (BCD5) protection structures. A study of the influence of layout parameters on the ESD robustness with different test methods (HBM, CDM and TLP) will be given. Failure analysis by means of electrical characterization, Emission Microscopy and SEM inspection will also been presented
Neutralization of IL-10 and TGF beta 1 rescues T cells from tolerogenic mechanisms induced by HER2 vaccine in cancer patients
Purpose/Objective: Dendritic cells (DCs) are the most potent antigen presenting cells in the immune system, which are capable of priming naıve T cells and can stimulate memory T cells and B cells to generate antigen-specific responses. Recent clinical trials were designed to stimulate immune system against HER2+ tumor by using HER2-peptides-based or peptides-loaded-DCs vaccine, but no clinical responses was elicit, probably due to self tolerance mediated by natural and peripheral-induced Tregs.
Materials and methods: In our work, CD14+ monocytes were
separated from PBMC of healthy subjects or patients with pancreatic and breast cancer overexpressing HER2, to generate dendritic cells (DCs). This DCs were matured and transfected with plasmids coding for extracellular and transmembrane domains of human HER2 then used to activate autologous T cells. Activation of T cells were assessed by intracellular staining, IFNc-ELISpot, ELISA and cytotoxicity assays.
Results: Results showed that Human-DCs were able to trigger IFNc
release by autologous T cells in healthy donors, but not in cancer
patients. Failure of Human-DCs could be ascribe to higher induction
of Tregs activity and to higher amount of IL-10 and TGFb1 found in
cultures, since neutralization of these two cytokines restored the ability to induce IFNc production.
Conclusions: From these we can conclude that cancer vaccine based on self antigen can induce an antitumor response but also activate immune tolerance mechanisms. This finding represent an important point thatbe consider to design cancer vaccines in future
Producción de forraje de alfalfa bajo estrategias de fertilización con digerido en Santa Fe, Argentina = Alfalfa Forage Production under Fertilization Strategies Using Digestate in Santa Fe, Argentine
Publicado en: Revista Argentina de Producción Animal – RAPA 44 (Supl. 1) : 357. (septiembre 2024)Los sistemas pastoriles del noreste de Santa Fe pueden enriquecer y estabilizar su oferta natural con leguminosas implantadas como alfalfa (Medicago sativa L.). Esta requiere adecuado manejo de la fertilidad del suelo dado sus requerimientos nutricionales y el estado degradado de los suelos agrícolas en su composición de nitrógeno (N) y fósforo (P). Los fertilizantes tradicionales (F) con NP actúan a corto plazo, mientras los abonos orgánicos pueden actuar a corto y mediano plazo y mejorar la productividad de alfalfa (Ugarte et al., 2014). El digerido (D) es un líquido derivado de la producción de biogás, rico en NPK. Puede ser transportado con
cisternas y “regado” sobre suelo y cultivos. Sus efectos para trigo, soja y verdeos son conocidos y favorables (Mieres et al. 2023) sin embargo, se presentan escasos antecedentes documentados en alfalfa. El objetivo fue evaluar la biomasa de alfalfa en respuesta a la aplicación de D en comparación con dosis de fertilizante de suficiencia de P y sin fertilización.EEA ReconquistaFil: Mieres, Luciano Nicolás. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Sponton, Julio Marcelo. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Lorenzini, Hugo. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; Argentin
Caracterización química de suelos cultivados con algodón (Gossypium Hirsutum L.) en Santa Fe, Argentina
Póster de la presentaciónSanta Fe superó las 70 mil hectáreas anuales de siembra de algodón, un cultivo industrial adaptado a las condiciones ambientales subtropicales. El diagnostico del estado químico de los suelos por zonas es fundamental para ajustar el manejo nutricional del cultivo y también para establecer acciones de recuperación de suelos degradados. El objetivo de este estudio es caracterizar aspectos positivos y limitantes en base a análisis químico de suelo, en relación a la nutrición del cultivo y sustentabilidad del suelo en zonas de siembra actual de algodón.EEA ReconquistaFil: Mieres, Luciano Nicolas. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Scarpin, Gonzalo Joel. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Scarpin, Gonzalo Joel. Asociación para la promoción de la Producción Algodonera (APPA); ArgentinaFil: Zorzón; Cristian. Asociación para la promoción de la Producción Algodonera (APPA); ArgentinaFil: Sponton, Julio Marcelo. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Monzon, Leonardo Jesús. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; ArgentinaFil: Ardit, Gabriel. Instituto Nacional de Tecnología Agropecuaria (INTA). Estación Experimental Agropecuaria Reconquista; Argentin
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technolog
