8 research outputs found
Characterization of the Interface in Rubber/Silica Composite Materials
No full textAbstract: in the rubber industry, especially tyre production, the most widely used elastomer is styrene-butadiene rubber (SBR) in which the styrene units generally are present at 25 wt.%. The unit repeats are random distributed along the macromolecular chains and the configuration of the butadiene units is mostly 1,4-trans. The elastomer blends are mixed with fillers, acting as reinforcing agents, and the effect that silica particles have on their physical and mechanical properties is now well established. One of the most important parameters in determining the performance of such composite materials is the degree of adhesion at the rubber/silica interface. In this context, the interface characterization has been performed through a spectroscopic investigation (XPS/x-ray-induced Auger electron spectroscopy) in order to derive information from core-level and Auger line chemical shifts. A series of composite rubbers have been examined by means of a detailed curve-fitting procedure that allows the determination of intrinsic and extrinsic structures connected to each photopeak and the spectroscopic results compared with those of reference compounds. The changes in the C 1s lineshape and shake-up region of the polymers and the reduced binding energies of silicon, oxygen and sulphur core lines have provided clear evidence of interfacial reactions. Moreover, the Auger parameters of silicon show systematic shifts that can be interpreted on a chemical state plot in terms of initial- and final-state contributions and used for theoretical investigation of the local chemical environment. Copyright (C) 2002 John Wiley Sons, Ltd
Cerebral fat embolism after traumatic bone fractures: a structured literature review and analysis of published case reports
No full textBackground: The incidence of cerebral fat embolism (CFE) ranges from 0.9–11%, with a mean mortality rate of around 10%. Although no univocal explanation has been identified for the resulting fat embolism syndrome (FES), two hypotheses are widely thought: the ‘mechanical theory’, and the ‘chemical theory’. The present article provides a systematic review of published case reports of FES following a bone fracture. Methods: We searched MEDLINE, Web of Science and Scopus to find any article related to FES. Inclusion criteria were: trauma patients; age ≥ 18 years; and the clinical diagnosis of CFE or FES. Studies were excluded if the bone fracture site was not specified. Results: One hundred and seventy studies were included (268 cases). The male gender was most prominent (81.6% vs. 18.4%). The average age was 33 years (±18). The mean age for males (29 ± 14) was significantly lower than for females (51 ± 26) (p < 0.001). The femur was the most common fracture site (71% of cases). PFO was found in 12% of all cases. Univariate and multivariate regression analyses showed the male gender to be a risk factor for FES: RR 1.87 and 1.41, respectively (95%CI 1.27–2.48, p < 0.001; 95%CI 0.48–2.34, p < 0.001). Conclusions: FES is most frequent in young men in the third decades of life following multiple leg fractures. FES may be more frequent after a burst fracture. The presence of PFO may be responsible for the acute presentation of cerebral embolisms, whereas FES is mostly delayed by 48–72 h
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
No full textThe design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies
Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths
No full textGe-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2)
