2,327 research outputs found

    Cw ion lasers pumped by electron beams

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    We have obtained cw laser radiation from singly ionized Hg, I, Cd, Se, and As by exciting He metal-vapor mixtures with a dc electron beam. The beam is generated by glow discharge electron guns located apart from the active medium. This is the first time that cw ion laser action has been obtained using electron beam excitation

    CW laser action in atomic fluorine

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    We have obtained CW laser action on four transitions in the doublet system of atomic fluorine for the first time. All previously reported laser action was on a pulsed basis only. CW laser radiation was obtained when F2 or AgF was used as a fluorine donor in an electron beam pumped helium plasma. A multiline output power of 200 mW was obtained

    CW silver ion laser with electron beam excitation

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    A CW laser power of 140 mW was obtained in the 840.39 nm transition of Ag II by electron beam excitation. This electron beam excited metal vapor ion laser is capable of operating using metals with high vaporization temperatures and is of interest for generation of CW coherent radiation in the 220-260 nm spectral region

    Comparison of the stress between rapid thermal annealed and excimer laser annealed polycrystalline silicon thin films

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    Characteristics of polycrystalline silicon films with large substrate such as 50 mm x 50 mm, crystallized by using furnace annealing (FA), multi-step rapid thermal annealing (MSRTA) and excimer laser annealing (ELA) methods, have been investigated. In order to characterize the residual stress in crystalline silicon on coming 7059 glass, polarized Raman spectroscopy were measured for those various annealing methods and at various substrate temperatures. We observed that the polycrystalline Si films, crystallized by ELA, have a high crystalline volume fraction, residual stress and equiaxial crystal growth. On the other hand, silicon films crystallized by FA and MSRTA have a low compressive stress and dendritic structure, which are due to thermal relaxation. These Si films have a broad hump around 480 cm(-1) which indicates the existence of amorphous phase silicon. The magnitudes of stresses of FA and MSRTA are 4.07 x 10(9) and 4.46 x 10(9) dyne cm(-2), respectively and the magnitude stress of laser annealing decreases from 1.35 x 10(10) to 8.58 x 10(9) dyne cm(-2) with increasing the substrate temperature from room temperature to 400 degrees C. (C) 1998 Elsevier Science Ltd

    1-W cw Zn ion laser

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    We have obtained 1.2W of cw laser power on the 4911.6- and 4924.0-Å transitions of Zn II by exciting a He-Zn gas mixture with a dc glow discharge electron beam. In addition, 0.25-W output power has been obtained on the 6149.9-Å line of Hg+ using the same excitation scheme. The combination of electron beam ionization of rare gas atoms and subsequent charge transfer excitation to metal ion levels is shown to have the potential of significantly increasing the efficiency of ion lasers. cw multiwatt visible and ultraviolet ion lasers operating at efficiencies > 10-3 appear feasible using this excitation scheme

    Stabilization as a CW approximation

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    AbstractThis paper describes a peculiar property of the category of S-modules constructed by the author, Kriz, Mandell, and May: the full subcategory of suspension spectra (all of which are S-modules) forms a precise copy of the category of topological spaces. Consequently, the “classical” homotopy category of S-modules with morphisms the actual homotopy classes of maps contains a copy of unstable homotopy theory. Stabilization and stable homotopy are induced by CW approximation as S-modules. One consequence is that CW complexes whose suspension spectra are CW S-modules must be contractible
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