1,720,975 research outputs found
Germanium on silicon pin photodiodes for the near infrared
No full textNovel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps
Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics
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Ge on Si p-i-n photodiodes operating at 10 Gbit/s
No full textWe report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics
High responsitivity near infrared Ge photodetectors integrated on Si
No full textThe authors have fabricated and tested heterojunction Ge/Si photodetectors based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD process followed by cyclic thermal annealing. The detectors exhibit responsivities as high as 550mA/W at 1.32 mu m and 250mA/W at 1.55 mu m and response limes shorter than 850ps
Si-based near infrared photodetectors operating at 10 Gbit/s
No full textWe report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C followed by thermal annealing at 900 degrees C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2A/W at 1.3 and 1.55 mu m, respectively, as well as open-eye diagrams at 10 Gbit/s. (c) 2006 Elsevier B.V. All rights reserved
Measurement of the near infrared absorption of Ge on Si films by differential spectroscopy
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