32 research outputs found
Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor
No full textKayed, Tarek/0000-0003-3482-4166Lithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Properties of Boron Doped Ti-Ba Superconductors
No full textKayed, Tarek/0000-0003-3482-4166The effects of boron doping on the formation and properties of the Tl-based superconductors have been studied. Up to 10 wt.% boron has been added to the oxides having the nominal composition, Tl1.8Ba2Ca2.2Cu3Ox, by the usual solid-state reaction method. Boron additions in the range 0.8-1.0% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of boron additions eliminate the Tl-2223 phase, reduce the fraction of Tl-2212 phase and cause separate non-superconducting phases to be formed. The formation of non-superconducting phases does not allow us to obtain pure Tl-2212 phase. (C) 2002 Elsevier Science Ltd. All rights reserved
Electrical Properties of Bi<sub>1.5</Sub>znsb<sub>1.5< Pyrochlore Ceramics
No full textKayed, Tarek/0000-0003-3482-4166Bi1.5ZnSb1.5O7 pyrochlore samples were prepared by solid state reaction method. They were examined by x-ray diffraction and scanning electron microscopy. Single phase, belongs to the cubic pyrochlore structure, with a lattice parameter of 10.442 Angstrom and grain size that varies from 16 to 20 mum was obtained. The electrical properties were measured at different temperatures in the range 15-330 K under different applied magnetic fields up 1.4 T. In our measurements for Hall coefficient, Hall resistivity, and mobility; we noticed an anomalous behavior at two temperatures (around 250 and 310 K) which was supported by the I-V measurements (double transition of the slope of I-V characteristics (beta) at the same temperatures). This was discussed in terms of polarization phenomenon and mixed ionic-electronic conduction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Magnetoresistance, Voltage-Current Characteristics, and Hall Effect Measurements of Bulk Mgb<sub>2</Sub> Superconductors
No full textKayed, Tarek/0000-0003-3482-4166Bulk MgB2 samples were prepared from the commercially available powder (Alfa-Aesar). One of the samples was used in measuring the transport properties by the DC four-probe technique while the other was used in measuring Hall effect using the van-der-Pauw configuration. From the transport measurements, we noticed that the R-T curves shift to lower temperatures under applied magnetic field without any observed enlargement of the transition width. T-c gradually decreases from 37 K at zero field to 32 K at B = 1.4 T. Our V-I data were found to obey a power law expression V proportional to I-beta(T,I- B). The change of beta with temperature and magnetic field was shown and discussed. R-H is positive under positive applied magnetic field. The 1/R-H linear dependency on T, usually observed in high temperature superconductors, could not be observed in our case. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Effect of Lithium Doping on the Properties of Tl-Based Superconductors
No full textGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Kayed, Tarek/0000-0003-3482-4166The effects of lithium doping on the formation and properties of the T1-based superconductors have been studied. Lithium atoms up to around 3 mol.% have been added to the oxides of nominal composition Tl1.8Ba2Ca2.2Cu3Ox, and the usual solid-state reaction method has been applied. Lithium additions in the range 0.23-0.29 mol.% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of lithium additions diminish the Tl-2223 phase, reduce the fraction of the Tl-2212 phase, and cause separate non-superconducting phases to be formed
Production of Anorthite From Kaolinite and Caco<sub>3</Sub> Via Colemanite
No full textBilen, Murat/0000-0003-3374-8173; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166Boron oxide has been found to be useful flux for the preparation of dense anorthite ceramics (CaO.Al2O3.2SiO(2)). Inexpensive starting materials of kaolinite, calcium carbonate and silica were used for anorthite ceramic production. Colemanite (2CaO.3B(2)O(3).5H(2)O) was added into the mixtures and the effects of colemanite upon the transformation towards anorthite and on the densification were investigated between 900-1400 degreesC. Single phase anorthite ceramic formed at lower temperatures in boron containing mixtures. Boron containing powder compacts were sintered above 90% theoretical density at 1350 degreesC
Characterization of As<sub>2</Sub>se<sub>3< Heterojunction Designed for Multifunctional Operations
No full textQasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166In this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm(2) V-1 s(-1). From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications
Temperature and Magnetic Field Effects on the Carrier Density and Hall Mobility of Boron-Doped Tl-Ba Superconductor
No full textQasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166Boron-doped T1-based superconductor was prepared by adding an amount of 1 wt.% B to the Tl1.8Ba2Ca2.2Cu3Ox, compound. The usual solid-state reaction method has been applied under optimum conditions. The X-ray data of the sample show a tetragonal structure with a high ratio of T1-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 120 K. The magnetic field and temperature effects on the normal state electrical resistivity, carrier density, and Hall mobility have been investigated. Both temperature and magnetic field significantly affect the resistivity behavior. The zero field resistivity was found to vary exponentially with temperature with a slope revealing activation energy of 27.5 meV. When the magnetic field is applied, the resistivity varied up-normally in the temperature region of 160-240 K. The temperature dependent carrier concentration calculated from the Hall coefficient data varied linearly with the applied magnetic field. This effect was attributed to the increase in the hole effective mass upon field increment. The temperature-dependent carrier concentration data at several applied fields were analyzed by the single donor-single acceptor model to obtain the values of effective masses. The temperature and magnetic field dependent normal state Hall mobility was found to be limited by the scattering of acoustic phonons. (c) 2005 Elsevier B.V. All rights reserved
Photoconductivity Kinetics in Agin<sub>5</Sub>s<sub>8< Thin Films
No full textErcan, ismail/0000-0001-6490-3792; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166The temperature (T) and illumination intensity (F) effects on the photoconductivity of as grown and heat-treated AgIn5S8 thin films has been investigated. At fixed illumination intensity, in the temperature region of 40-300K, the photocurrent (I-ph) of the films was observed to decrease with decreasing temperature. The I-ph of the as grown sample behaved abnormally in the temperature region of 170-180K. At fixed temperature and variable illumination intensity, the photocurrent of the as grown sample exhibited linear, sublinear and supralinear recombination mechanisms at 300 K and in the regions of 160-260K and 25-130 K. respectively. This behavior is attributed to the exchange of role between the linear recombination at the surface near room temperature and trapping centers in the film which become dominant as temperature decreases. Annealing the sample at 350 K for 1 h improved the characteristic curves of I-ph. The abnormality disappeared and the I-ph - T dependence is systematic. The data analysis of which revealed two recombination centers located at 66 and 16 meV. In addition, the sublinear recombination mechanism disappeared and the heat-treated films exhibited supralinear recombination in most of the studied temperature range. (C) 2010 Elsevier B.V. All rights reserved
Heat Treatment Effects on the Structural and Electrical Properties of Thermally Deposited Agin<sub>5</Sub>s<sub>8< Thin Films
No full textErcan, filiz/0000-0002-3533-0726; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166The heat treatment effects on structural and electrical properties of thermally deposited AgIn5S8 thin films have been investigated. By increasing the annealing temperature of the sample from 450 to 500 K, we observed a change in the crystallization direction from (420) to (311). Further annealing of the AgIn5S8 films at 550, 600 and 650 K resulted in larger grain size in the (311) preferred direction. The room temperature electrical resistivity, Hall coefficient and Hall mobility were significantly influenced by higher annealing temperatures. Three impurity levels at 230, 150, and 78 meV were detected for samples annealed at 350 K. The electrical resistivity decreased by four orders of magnitude when the sample annealing temperature was raised from 350 to 450 K. The temperature dependent electrical resistivity and carrier concentration of the thin film samples were studied in the temperature ranges of 25-300 K and 140-300 K, respectively. A degenerate-nondegenerate semiconductor transition at approximately 180 was observed for samples annealed at 450 and 500 K. Similar type of transition was observed at 240 K for samples annealed at 600 and 650 K. (C) 2011 Elsevier Ltd. All rights reserved
