1,721,106 research outputs found
La “Prise en Charge" de un paciente bajo anticoagulantes o antiagregantes plaquetarios antes de una resección transuretral de próstata.
Full text linkFil: Becq-Kayal, M. C..
Anestesista Hospital Saint-Louis (Paris, Francia
FD SOI Hall Sensor Electronics Interfaces for Energy Measurement
No full textThis paper presents a SOI Hall sensor based microsystem for energy measurement. The mixed-mode signal circuitry has been entirely
designed and integrated in the experimental 0.5 mm fully depleted SOI 3V technology. It consists of an integrated Hall element, chopper
stabilized sensor bias system, analog front end and digital back end. Aiming at performing accurate measurements, we have implemented
a high linearity analog front end, as well as a high-resolution analog-to-digital conversion technique. Two versions of the microsystem
have been realized. The first test chip contains a classical instrumentation amplifier as sensor amplifier, whereas the second one contains a
linearized differential-difference amplifier as sensor amplifier. Both microsystems are fully functional and permits one to perform the
measurements with an overall system error that is less than 71.5%
SOI Hall Sensor Based Solid State meter for Power and Energy Measurements.
No full textGrowing demand for the solid state meters for power and energy measurement leads to the fully integrated Hall sensor based microsystem solutions. In this paper we describe fully integrated SOI Hall sensor based microsystem for power and energy measurements with dynamic offset cancellation. Since Hall sensor behaves like a natural four quadrant multiplier it is used to multiply the line voltage and current giving the output voltage proportional to the instantaneous power. Furthermore, voltage at the Hall output is proportional to the line active power and can be further processed. By converting the sensor output voltage to digital signal using a sigma-delta demodulator followed by a digital filtering, the energy consumption is observed at the end of the processing chain. The entire microsystem has been designed for high linearity and resolution, and integrated in 0.5 mu m FD SOI process
Microelectronic System for Hall Sensor Power Measurements.
No full textA new integrated architecture for power measurements is proposed. The system includes the Hall sensor bias circuit and its front-end voltage amplifier. The implemented architecture performs the conversion of the electrical power into a Hall voltage, which is then amplified by a Differential Difference Amplifier (DDA). The architecture shows low power consumption and an optimized area however its resolution is drastically limited by the sensor offset and the linearity of the DDA. In order to achieve higher resolution, a second system is also proposed where a dynamic offset cancellation is employed in the bias scheme in order to reduce both the sensor and the electronics offset. To improve the sensor amplifier stage, a linearized version of the DDA is used. The latter architecture appears to be very promising and a linearity of 16-bit is achieved. Both simulations and measurements results from the comparison between the two architectures are shown in this paper
Structured design based on the inversion factor parameter: Case study of ΔΣ modulator system
No full textThis paper presents the design flow from system-level specifications to transistor-level design for three different fully-differential amplifiers composing the first and the second integrator of a second-order hybrid multi-bit ΔΣ modulator. The circuit-level specifications for each amplifier are extracted using behavioral models and timedomain system-level simulations with a SNDR target value of 93 dB ± 2 dB. The amplifiers are designed using the structured analog design methodology consisting of circuit partitioning into basic analog blocks, specification derivation for each basic block, and transistor sizing in a specific design sequence. Transistor-level design is based on the choice of the inversion factor and the transistor length to achieve the required specifications of each block. After all three analog amplifiers are sized, the system-level performance is confirmed by time-domain simulations, and the obtained SNDR value is within the specified range. Copyright © 2007 by Department of Microelectronics & Computer Science, Technical University of Lodz.GR-KAEPFL, Electronics Labs., STI/IMM/LEG, CH-1015 Lausanne, Switzerland Marvell Switzerland Sarl, Route de Pallatex 17, CH-1163 Etoy, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4286127, References: Enz, C., Krummenacher, F., Vittoz, E., An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications (1995) Analog Integrated Circuits and Signal Processing, pp. 83-114. , Kluwer Academic Publishers; Kayal, M., Randjelovic, Z., Auto-zero differential difference amplifier (2000) Electronics Letters, 36, pp. 695-696; Stefanovic, D., Krummenacher, F., Pastre, M., Kayal, M., BSIM2EKV: Un outil pour la conversion automatique des paramèters du modèle BSIM aux paramèteres du modèle EKV (2004) TAISA'04 5ème colloque sur le Traitement Analogique de l'Information, du Signal et ses Applications, pp. 85-88; Bult, K., Geelen, G., A fast-settling CMOS op amp for SC circuits with 90-dB DC gain (1990) IEEE Journal of Solid-State Circuits, 25, pp. 1379-1384; Stefanovic, D., Kayal, M., Pastre, M., Litovski, V., Procedural analog design (PAD) tool (2003) Fourth International Symposium on Quality Electronic Design, pp. 313-318; Stefanovic, D., Kayal, M., Pastre, M., PAD: A New Interactive Knowledge-Based Analog Design Approach (2005) Analog Integrated Circuits and Signal Processing Journal, 42, pp. 291-29
High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
No full textIn this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic gain for oscillator design is analyzed and an oscillator design is proposed based on these findings. The reported oscillator performance shows the advantages of an active MEM resonator for the construction of MEM based oscillators with respect to the reduced requirements on the electronics. © 2009 by Department of Microelectronics & Computer Science.NANOLABGR-KAElectronic Laboratory, EPFL, 1015 Lausanne, Switzerland Nanoelectronic Devices Laboratory, EPFL, 1015 Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 5289466, References: Nguyen, C.T.C., MEMS technology for timing and frequency control (2007) Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on, 54, pp. 251-270; Nathanson, J.H.C., Wickstrom, R.A., A resonant-gate silicon surface transistor with high-Q band-pass properties (1965) Applied Physics Letters, 7, pp. 84-86; Abele, N., Fritschi, R., Boucart, K., Casset, F., Ancey, P., Ionescu, A.M., Suspended-gate MOSFET: Bringing new MEMS functionality into solid-state MOS transistor (2005) Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, pp. 479-481; Grogg, D., Mazza, M., Tsamados, D., Ionescu, A.M., Multi-gate Vibrating-body Field Effect Transistors (VB-FETs) (2008) Electron Devices Meeting, 2008. IEDM 2008. IEEE International, pp. 663-666; Nguyen, C.T.C., Howe, R.T., Design and performance of CMOS micromechanical resonator oscillators (1994) Frequency Control Symposium, 1994, pp. 127-134. , 48th, Proceedings of the 1994 IEEE International; Nguyen, C.T.C., Howe, R.T., An integrated CMOS micromechanical resonator high-Q oscillator (1999) Solid-state Circuits, IEEE Journal of, 34, pp. 440-455; Yu-Wei, L., Seungbae, L., Sheng-Shian, L., Yuan, X., Zeying, R., Nguyen, C.T.C., Series-resonant VHF micromechanical resonator reference oscillators (2004) Solid-state Circuits, IEEE Journal of, 39, pp. 2477-2491; Seungbae, L., Nguyen, C.T.C., Influence of automatic level control on micromechanical resonator oscillator phase noise (2003) Frequency Control Symposium and pda Exhibition Jointly with the 17th European Frequency and Time Forum, 2003, pp. 341-349. , proceedings of the 2003 ieee international; Grogg, D., Lo Conte, F., Kayal, M., Ionescu, A.M., 9 MHz vibrating body FET tuning fork oscillator (2009) EFTF-IFCS, , to be presented, Besançon; Grogg, D., Meinen, C., Tsamados, D., Tekin, H.C., Kayal, M., Ionescu, A.M., Double gate movable body micro-electro-mechanical FET as hysteretic switch: Application to data transmission systems (2008) Solid-state Device Research Conference, 2008. ESSDERC 2008. 38th European, pp. 302-305; Blagojevic, M., Pastre, M., Kayal, M., Fazan, P., Okhonin, S., Nagoga, M., Declercq, M., SOI capacitor-less 1-transistor DRAM sensing scheme with automatic reference generation (2004) IEEE Symposium on VLSI Circuits, pp. 182-183. , June; Blagojevic, M., Kayal, M., Pastre, M., Harik, L., Okhonin, S., Fazan, P., Capacitor-less 1T DRAM sensing scheme with automatic reference generation (2006) IEEE Journal of Solid-state Circuits (JSSC), 41, pp. 1463-1470. , June; Pastre, M., Kayal, M., Blanchard, H., A hall sensor analog front end for current measurement with continuous gain calibration (2007) IEEE Sensors Journal, 7 (5), pp. 860-867. , Special Edition on Intelligent Sensors, May; Kaajakari, V., Mattila, T., Oja, A., Seppa, H.A.S.H., Nonlinear limits for single-crystal silicon microresonators (2004) Microelectromechanical Systems, Journal of, 13, pp. 715-724; Kaajakari, V., Koskinen, J.K., Mattila, T., Phase noise in capacitively coupled micromechanical oscillators (2005) Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on, 52, pp. 2322-233
SOI Hall Sensor Electronics Interface for Energy Measurement with Dynamic Offset Compensation
No full textOptical sensor using a floating body SOI MOSFET in the Delta-sigma loop
No full textIn this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.GR-KAEDLABEcole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4656309, References: Harik, L., Sallese, J.-M., Kayal, M., Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Solid-State Electronics, , available online, in Press; J M. Hill and J. Lachman, A 900 MHz 2.25 MB cache with on chip CPU now in CU SOI, in ISSCC 2001, Session 11 SRAM 11.5Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , Ma
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