1,721,031 research outputs found
EFFECTS OF GROWTH TEMPERATURE ON TDDB CHARACTERISTICS OF N2O-GROWN OXIDES
No full textIn this paper, effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 angstrom) N2O-grown oxides are investigated and compared with those for conventional O2-grown SiO2 films with identical thickness. Results show that TDDB characteristics of N2O oxides are strongly dependent on the growth temperature and, unlike conventional SiO2, TDDB properties are much degraded for N2O oxides with an increase in growth temperature. Large undulations at the Si / SiO2 interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N2O oxides grown at higher temperatures
MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES
No full textIn this paper, a new technique, namely NH3 nitridation of N2O oxides, is proposed and demonstrated to increase nitrogen concentration in N2O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH3-nitrided N2O oxides show excellent electrical (low fixed charge) and reliability properties (smaller charge trapping and suppressed interface state generation), with an additional advantage of significantly improved resistance to boron penetration. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology
HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES
No full textIn this paper, stress-induced leakage current (SILC) is studied in ultrathin (approximately 50 angstrom) gate oxides grown in N2O or O2 ambient, using rapid thermal processing (N2O oxide or control oxide, respectively). MOS capacitors with N2O oxides exhibit much suppressed SILC compared to control oxide for successive ramp-up, constant voltage dc, and ac (bipolar and unipolar) stresses. The mechanism for SILC is discussed and the suppressed SILC in N2O oxide is attributed to the suppressed interface state generation due to the nitrogen incorporation at the Si/SiO2 interface during N2O oxidation
EFFECTS OF POST DEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS
No full textThis paper reports the effects of post-deposition rapid thermal annealing on the electrical characteristics of chemical vapor deposited (CVD) Ta2O5 (approximately 10 nm) on NH3-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different post-deposition annealing conditions are compared: a) 800-degrees-C rapid thermal O2 annealing (RTO) for 20 sec followed by rapid thermal N2 annealing (RTA) for 40 sec, b) 800-degrees-C RTO for 60 sec and c) 900-degrees-C RTO for 60 sec. Results show that an increase in RTO temperature and time decreases leakage current at the cost of capacitance. However, over-reoxidation induces thicker oxynitride formation at the Ta2O5/poly-Si interface, resulting in the worst time-dependent dielectric breakdown (TDDB) characteristics
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT
No full textWe report a detailed study of time-dependent dielectric breakdown (TDDB) in N2O-grown thin (47-120 angstrom) oxides. A significant degradation in breakdown properties (such as charge-to-breakdown, breakdown field) was observed in N2O oxides with increasing oxide growth temperature; a strikingly different dependence than that in pure oxides. A physical model based on undulations at the Si/SiO2 interface is discussed to account for the degradation of breakdown properties for higher N2O oxidation temperature. Accelerated breakdown in N2O oxides for higher operating temperatures and higher oxide fields as well as thickness dependence of TDDB are studied under both polarities of injection. These dependencies are similar to the reported data on pure oxides. Breakdown under unipolar and bipolar stress in N2O oxides is compared with dc breakdown. Unlike the case of pure oxides, an asymmetric improvement in time-to-breakdown under positive versus negative gate unipolar stress is observed, which is attributed to charge detrapping behavior in N2O oxides. A dramatic reduction in time-to-breakdown of N2O oxide is observed under bipolar stress when the thickness is scaled below 60 angstrom. A physical model, based on the thickness dependence of trapped hole centroid, is suggested to explain this behavior. Overall, our results indicate that N2O oxides are expected to show improved breakdown properties than pure SiO2 Over a wide range of operating temperatures, electric fields, oxide thicknesses, as well as under ac stress
FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING
No full textHigh quality, ultrathin (<30 Angstrom) SiO2/Si3N4 (ON) stacked film capacitors have been fabricated by ill situ rapid-thermal multiprocessing. Si3N4 film was deposited on the RTN-treated poly-Si by rapid-thermal chemical vapor deposition (RTCVD) using SiH4 and NH3, followed by in situ low pressure rapid-thermal reoxidation in N2O (LRTNO) or in O-2 (LRTO) ambient, While the use of low pressure reoxidation suppresses severe oxidation of ultrathin Si3N4 film, the use of N2O-reoxidation significantly improves the quality of ON stacked film, resulting in ultrathin ON stacked film capacitors with excellent electrical properties and reliability
Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free
No full textFORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT
No full textThis letter reports on a novel reoxidation technique for SiO2/Si3N4 (ON) stacked films by using N2O as oxidant. Effect of in-situ rapid thermal N2O reoxidation (RTNO) on the electrical characteristics of thin ON stacked films are studied and compared with those of in-situ rapid thermal O2 reoxidation (RTO). Prior to reoxidation, the Si3N4 film was deposited by rapid thermal chemical vapor deposition (RT-CVD) using SiH4 and NH3. Results show that RTNO of the Si3N4 films significantly improves electrical characteristics of ON stacked films in terms of lower leakage current, suppressed charge trapping, reduced defect density and improved time-dependent-dielectric-breakdown (TDDB), as compared to RTO of the Si3N4 films
A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer
No full text- …
