1,720,980 research outputs found
Three-Dimensional, Flexible and Printed Static Random-Access Memory based on Complementary Organic TFTs
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Static Response of Three-Dimensional and Printed Complementary Organic TFTs-Based Static Random-Access Memory
No full textIEEEA three-dimensional (3-D) and printed static random-access memory (SRAM) based on complementary organic thin-film transistors is demonstrated. The SRAM exhibited the smallest area of 2.1 mm2, the highest normalized static noise margin of 62%, and the maximum gain of 16.8 V/V compared to the reported values of organic SRAM cells. The transistors’ 3-D integration minimizes the cell area. The 3-D SRAM cell design enables us to match the strengths of transistors by modifying the dielectric thickness without changing the channel geometry. This high-performance complementary organic thin-film transistors-based SRAM shows its high application potential in large-scale and low-cost wearable intelligent electronics for data storage and processing.11Nsciescopu
All-Solution Processed Organic Nonvolatile Memory Thin-Film Transistor Fabricated with Reverse Offset Printing
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Three-Dimensional, Flexible, and Printed Complementary Organic TFTs-based Static Random-Access Memory
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Skin-Attachable and High-Performance Organic Printed Active-Matrix Devices for Health Monitoring Platform
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Phase-Separated, Flexible and Printed Organic Nonvolatile Memory Thin-Film Transistor
No full textIn this work, we present flexible and printed organic nonvolatile memory thin-film transistors (TFTs) using a phase-separated polymer tunneling layer. On a large-area substrate of 150 by 150 mm, finely patterned electrodes are fabricated by reverse-offset printing with 15 um line width and 10 um channel length through three steps of ink coating, patterning and transfer. The memory devices are configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene). All functional layers are solution-processed. A blend ink containing a small-molecule p-type organic semiconductor dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and a tunneling polymer polystyrene are printed on the TFT active area using air-pulse nozzle printing. The tunneling layer is formed during the active layer printing process with the blended ink by phase separation of small-molecule and polymer. The printed nonvolatile memory TFTs with the phase-separated tunneling layer exhibited significantly improved VTH shifts (~3 times), programmed/erased current ratio (>10^3 A/A), switching speed (10 y). We believe that proposed approach shows a facile way to the printing fabrication of nonvolatile memory TFTs with improved memory characteristics, and thus demonstrates the feasibility of flexible memory into emerging applications in wearable electronics, smart Internet-of-Things devices and neuromorphic computing devices.1
Reverse-Offset-Printed Organic Nonvolatile Memory Thin-Film Transistor
No full textReverse-offset-printed organic nonvolatile memory thin-film transistors (TFTs) are demonstrated on a large-area substrate for the first time. Finely patterned electrodes are fabricated by reverse-offset printing with 15 um line width and 10um channel length through three steps of ink coating, patterning and transfer using Ag-nanoparticle ink. Memory devices are configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene). A blend ink, which consists of a small-molecule p-type organic semiconductor dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and a tunneling polymer polystyrene, are fabricated using air-pulse nozzle printing. The tunneling layer is formed during the active layer printing process with blended ink by phase separation of small-molecule and polymer. The printed nonvolatile memory TFTs with the phase-separated tunneling layer exhibited significantly improved VTH shifts (~3 times), programmed/erased current ratio (>10^3 A/A), switching speed (10 y). We believe our finding is applicable to wearable electronics, smart Internet-of-Things devices and neuromorphic computing devices.1
All-Solution Processed Organic Nonvolatile Memory Thin-Film Transistor Fabricated with Reverse Offset Printing
No full textAll-solution processed printed organic nonvolatile memory thin film transistors (TFTs) are demonstrated on a large-area substrate. Finely patterned electrodes were fabricated by reverse offset printing with a line width of 15 um and a channel length of 10 um. The memory devices were configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene) (Fig. 1a). A blend ink of a small-molecule p-type organic semiconductor dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and a tunneling polymer polystyrene were fabricated using air-pulse nozzle printing. The tunneling layer was formed during an active layer printing process with blend ink by phase separation of small-molecule and polymer. The memory devices were manufactured in the same steps as TFT. The printed memory TFTs with the phase-separated tunneling layer exhibited significantly improved on/off ratio (>103 A/A), switching speed (10 years) (Fig. 1b). We believe our finding is applicable to wearable electronics, smart Internet-of-Things devices and neuromorphic computing devices.1
All-Solution Processed Organic Nonvolatile Memory Thin-Film Transistor Fabricated with Reverse Offset Printing
No full textAll-solution processed printed organic nonvolatile memory thin film transistors (TFTs) are demonstrated on a large-area substrate. Finely patterned electrodes were fabricated by reverse offset printing with a line width of 15 um and a channel length of 10 um. The memory devices were configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene) (Fig. 1a). A blend ink of a small-molecule p-type organic semiconductor dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and a tunneling polymer polystyrene were fabricated using air-pulse nozzle printing. The tunneling layer was formed during an active layer printing process with blend ink by phase separation of small-molecule and polymer. The memory devices were manufactured in the same steps as TFT. The printed memory TFTs with the phase-separated tunneling layer exhibited significantly improved on/off ratio (>103 A/A), switching speed (10 years) (Fig. 1b). We believe our finding is applicable to wearable electronics, smart Internet-of-Things devices and neuromorphic computing devices.1
Reverse-Offset-Printed, Phase-Separated, Organic Nonvolatile Memory Thin-Film Transistor
No full textReverse-offset-printed organic nonvolatile memory thin-film transistors (TFTs) are fabricated on a large-area substrate for the first time. Finely patterned electrodes (a line width of 15 um and a channel length of 10 um) were reverse-offset-printed through three steps of ink coating, patterning and transfer using Ag-nanoparticle ink. The memory devices were configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene). A blend ink of a small-molecule p-type organic semiconductor dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and a tunneling polymer polystyrene were fabricated using air-pulse nozzle printing. The tunneling layer was formed during an active layer printing process with blend ink by phase separation of small-molecule and polymer. The printed memory TFTs with the phase-separated tunneling layer exhibited significantly improved VTH shifts (≈3 times), programmed/erased current ratio (>103 A/A), switching speed (10 y). We believe our finding is applicable to wearable electronics, smart Internet-of-Things devices and neuromorphic computing devices.2
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