505 research outputs found

    Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

    No full text
    The realization of high interconnect densities for three-dimensional integration demands development of new wafer-to-wafer bonding approaches. Recently introduced Cu-to-Cu wafer-to-wafer hybrid bonding schemes overcome scaling limitations, but like other Cu-based interconnect structures, they are prone to electromigration. Migration and growth of voids, induced by electromigration and mechanical stress, cause Cu-to-Cu hybrid bonds to fail. A comprehensive modeling approach is required to fully understand the complex dynamics of voids with their influencing factors, such as current density, temperature, and mechanical stress. In this work, we utilize such a modeling approach to perform studies of void migration through Cu-to-Cu hybrid bonds. The calculated velocities of the evolving void surface fully correspond to the experimentally observed behavior of voids migrating from the lower pad to the upper diffusion barrier of the upper pad, where they cause electrical failure. The migration velocity of a void in the upper pad is 20% higher than the migration velocity of a void in the bottom pad. Unbalance of the normal velocity distribution at the void surface leads to the transformation of the originally ellipsoid void into a teardrop shape. The simulations provide full insight in the impact of layout geometry, material properties, and operating conditions on void dynamics. In addition, the results enable targeted adjustments of the influencing factors to inhibit void migration and growth in order to delay or to fully prevent Cu-to-Cu hybrid bond failure

    Non-invasive soft breakdown localisation in low k dielectrics using photon emission microscopy and thermal laser stimulation

    No full text
    © 2018 Elsevier Ltd For the first time a non-invasive localisation of a soft breakdown (SBD) is shown. The localisation is completed on fully functional back end of line (BEOL) test structures. The test structures used, provided by the interuniversity microelectronics centre (imec), are metal insulator semiconductor (MIS) structures. The low k dielectric within the test structures is SiOCH type with OSG 2.0 (k = 2.0), 45% porosity and 40 nm thickness. Contacless faul isolation methods have been evaluated for detecting a SBD on these structures. We evaluated photon emission microscopy (PEM) with two different signal detectors, the Si – CCD and the InGaAs camera. A proof of concept for detecting a SBD with themal laser stimulation (TLS) is presented. Using a Si – CCD and up to 2000 s integration time, photon emission (PE) signals from a 2 μm × 2 μm test structure with a leakage current less than 1 nA are presented. With the InGaAs detector a localised SBD from a 2 μm × 2 μm test structure with a leakage current of 100 pA is shown. The detected SBDs have a resistance of 33 GΩ and 260 GΩ respectively thus the level of degradation is several orders of magnitude lower compared to a hard breakdown (HBD). Up to now it was only possible to localise defects at higher levels of degradation. Due to the high energy at these levels, original defect signatures for SBD are usually destroyed. To better control the process of degradation, a way to nearly freeze the degradation process is shown. This method was used to detect a 1 nA leakage current of a 2 μm × 2 μm structure with a resistance of 35 GΩ using optical beam induced resistance change (OBIRCH) which is a similar contactless fault isolation (CFI) method to TLS. The presented SBD localisations allow to plan accurate physical preparations for the first time. Physical analysis of PEM localised SBD and HBD have been performed and compared. Possibilities to further improve the presented SBD detection levels are discussed for OBIRCH. Limitations for PEM with Si – CCD and InGaAs detectors as a CFI for SBDs are discussed.status: Publishe
    corecore