25 research outputs found
Electronic and Optical Properties of ZnAl<sub>2</sub> Se<sub>4</sub> and Its Use in Solar Cell
No full textImproving the Optical and Thermoelectric Properties of Cs2InAgCl6 with Substitutional Doping: A DFT Insight
No full textNew generation Indium based lead-free Cs2InAgCl6 is a promising halide
material in photovoltaic applications due to its good air stability and
non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar
spectrum and hence reducing the photoelectronic efficiency for device
applications. Here we report a significant band gap reduction from 3.3 eV to
0.6 eV by substitutional doping and its effect on opto-electronic and
opto-thermoelectric properties from first-principles study. The results predict
that Sn/Pb and Ga & Cu co-doping enhance the density of states significantly
near the valence band maximum (VBM) and thus reduce the band gap by shifting
the VBM upward while the alkali-metals (K/Rb) slightly increase the band gap. A
strong absorption peak near Shockley-Queisser limit is observed in co-doped
case while in Sn/Pb-doped case, we notice a peak in the middle of the visible
region of solar spectrum. The nature of band gap is indirect with Cu-Ga/Pb/Sn
doping with a significant reduction in the band gap. We observe a significant
increase in the power factor (PF) (2.03 mW/mK2) for n-type carrier in
Pb-dpoing, which is ~3.5 times higher than the pristine case (0.6 mW/mK2) at
500 K
