561 research outputs found
Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy
Synthesis of CoxFe1-xSi2 with High-Dose Ion Implantation and Reactive Codeposition Epitaxy
DFTB+ and lanthanides
DFTB+ is a recent general purpose implementation of density-functional based tight binding. One of the early motivators to develop this code was to investigate lanthanide impurities in nitride semiconductors, leading to a series of successful studies into structure and electrical properties of these systems. Here we describe our general framework to treat the physical effects needed for these problematic impurities within a tight-binding formalism, additionally discussing forces and stresses in DFTB. We also present an approach to evaluate the general case of Slater-Koster transforms and all of their derivatives in Cartesian coordinates. These developments are illustrated by simulating isolated Gd impurities in GaN
Synthesis of CoxFe1-xSi2 with high dose ion implantation and reactive codeposition epitaxy
The formation and thermal stability of ion-beam-synthesized ternary MexFe1-xSi2(Me=Co,Ni) in Si(111)
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