229 research outputs found
Measurement and Calculation of the Critical Pulsewidth for Gain Saturation in Semiconductor Optical Amplifiers
No full text
Measurement and calculation of the critical pulsewidth for gain saturation in semiconductor optical amplifiers
No full textPropagation delay of femtosecond pulses in an optical amplifier
No full textThe recent realization of tunable propagation delay of optical pulses in solid-state and semiconductor optical media1,2 has attracted great attention as such a functionality enables a whole new class of optical components in optical communications systems and signal processing3. The reported results show a large reduction in group velocity but this was achieved at the cost of a small bandwidth (e.g. 37 Hz in the case of Bigelow et al.1) of the probe signal. In this paper, we report measurements of slowing down and speeding up of the propagation of 150 fs pulses, having a very large bandwidth of 2.6 THz, through a quantum-dot (QD) semiconductor amplifier (SOA) at room temperature. This extremely large bandwidth, on the other hand, is at the cost of a rather small group index change of ?ng=4*10-3. We have performed two types of femtosecond pulse slow-down and advancement experiments. In the first experiment, we prepare a narrow peak or dip in the SOA gain spectrum by injection of a strong pump pulse4. The resulting dispersion feature is then probed by a weak pulse. In the second experiment, we measure self-slowdown or advancement as pulse energy isincreased5. In both cases, we perform measurements as function of injected bias current. Good agreement is found with simple models of the real and imaginary parts of the active material's susceptibility. 1 M.S. Bigelow, N.N. Lepeshkin, and R. Boyd, Phys. Rev. Lett. 90, 113903-1—4 (2003) 2 P.-C. Ku et al., Opt. Lett. 19, 2291—2293 (2004) 3 C.J. Chang-Hasnain, P.-C. Ku, J. Kim, S.-L. Chuang, Proc. IEEE 91, 1884—1897 (2003) 4 M. van der Poel, J. Mørk, and J.M. Hvam, paper JWB96, CLEO/QELS, Baltimore, USA, May 2005 5 M. van der Poel, J. Mørk, and J.M. Hvam, accepted for oral presentation, 13th. International symposium on nanostructures, St. Petersburg, June 200
160 Gb/s Silicon All-Optical Data Modulator based on Cross Phase Modulation
No full textWe have demonstrated 160 Gb/s all-optical data modulation with an extinction ratio of 18.5 dB based on XPM in a silicon nanowire. Error free performance is achieved for the optically modulated 160 Gb/s signal
Silicon chip based wavelength conversion of ultra-high repetition rate data signals
No full textWe report on all-optical wavelength conversion of 160, 320 and 640 Gbit/s line-rate data signals using four-wave mixing in a 3.6 mm long silicon waveguide. Bit error rate measurements validate the performance within FEC limits
All-Optical Wavelength Conversion of a High-Speed RZ-OOK Signal in a Silicon Nanowire
No full textAll-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits
320 Gb/s Phase-Transparent Wavelength Conversion in a Silicon Nanowire
No full textAll-optical wavelength conversion for a 320-Gb/s RZ-DPSK signal is demonstrated based on four-wave mixing in a silicon nanowire. BER better than 10-9 is achieved for the wavelength converted RZ-DPSK signal
Ultra-High-Speed Optical Serial-to-Parallel Data Conversion in a Silicon Nanowire
No full textWe demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits
Ultrafast Nonlinear Signal Processing in Silicon Waveguides
No full textWe describe recent demonstrations of exploiting highly nonlinear silicon waveguides for ultrafast optical signal processing. We describe wavelength conversion and serial-to-parallel conversion of 640 Gbit/s data signals and 1.28 Tbit/s demultiplexing and all-optical sampling
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