197 research outputs found
DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
No full textA broadband low-loss, ultra-low-power consumption transmit/ receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P-1dB better than 12 dBm with DC power consumption of less than 6 mu
An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT
No full textAn ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process
Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications
No full textWe report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an f/sub T/ of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz
Analysis of membrane support structures for integrated antenna usage on two-dimensional photonic-bandgap structures
No full textThe study of the transmission of electromagnetic waves through a photonic crystal with various membranes placed over the surface is presented in this paper. A difference in performance is observed even for a membrane thickness that is unable to support guided substrate modes through total internal reflection. The transmittance has been investigated for two crystal orientations, assuming normally incident external plane waves on a finite thickness two-dimensional (2-D) photonic crystals both with and without a membrane. The angular transmission response is characterized by scanning the incidence angle of the impinging plane wave to cover all available angles within the 2D periodic plane of the structure
Planar gunn diode characterisation and resonators elements to realise oscillator circuits
No full textThe paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera hertz sources using microwave monolithic integrated circuit (MMIC) technologies. Different planar Gunn electrode geometries are described along with DC, RF and thermal characterisation. To realize the planar high frequency sources there is requirement for high frequency planar resonators, the paper will describe both the radial and new diamond shaped geometries
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f<sub>T</sub> of 440 GHz for millimeterwave imaging receivers applications
No full textThe 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point
Electron mobility in surface- and buried- channel flatband In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs with ALD Al<sub>2</sub>O<sub>3</sub> gate dielectric.
No full textIn this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In<sub>0.53</sub>Ga<sub>0.47</sub>As channel devices employing an Atomic Layer Deposited (ALD) Al<sub>2</sub>O<sub>3</sub> gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure.
Peak electron mobilities of 4300 cm<sup>2</sup>/V·s and 6600 cm<sup>2</sup>/V·s at a carrier density of 3×1012 cm<sup>-2</sup> for the surface and buried channel structures respectively were determined. In contrast to similarly scaled inversion-channel devices, we find that mobility in surface channel flatband structures does not drop rapidly with electron density, but rather high mobility is maintained up to carrier concentrations around 4x10<sup>12</sup> cm<sup>-2</sup> before slowly dropping to around 2000 cm<sup>2</sup>/V·s at 1x10M<sup>13</sup> cm<sup>-2</sup>. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for future low power, highly scaled CM
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm
No full textAbstract:
Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions
Monolithic millimetrewave integrated circuits (MMICs) issues beyond 100 GHz for high resolution imaging and radar applications
No full textIn this work we will present the effect of parasitic moding on the mm-wave G-Band (140-220 GHz) performance of coplanar waveguide (CPW) components on GaAs substrates as a function of substrate thickness and layout geometries. It is observed that mm-wave energy leakage especially at 220 GHz is quite significant, i.e. as high as 9 dB for a standard short structure fabricated on 630 μm
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